2SJ217 Silicon P Channel MOS FET REJ03G0850-0200 (Previous: NON-084) Rev.2.00 Sep 07, 2005 Description High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1. Gate 2. Drain (Flange) 3. Source G 1 Rev.2.00 Sep 07, 2005 page 1 of 6 2 3 S 2SJ217 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Symbol VDSS Value –60 Unit V VGSS ID ±20 –45 V A –180 –45 A A 150 150 W °C –55 to +150 °C ID (pulse) IDR Note 1 Note 2 Channel dissipation Channel temperature Pch Tch Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C Tstg Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol V (BR) DSS Min –60 Typ — Max — Unit V Gate to source breakdown voltage Gate to source leak current V (BR) GSS IGSS ±20 — — — — ±10 V µA IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 IDSS VGS (off) — –1.0 — — –250 –2.0 µA V VDS = –50 V, VGS = 0 ID = –1 mA, VDS = –10 V RDS (on) RDS (on) — — 0.033 0.045 0.042 0.06 Ω Ω ID = –20 A, VGS = –10 V Note 3 ID = –20 A, VGS = –4 V Forward transfer admittance Input capacitance |yfs| Ciss 16 — 25 3800 — — S pF Output capacitance Reverse transfer capacitance Coss Crss — — 2000 490 — — pF pF ID = –20 A, VDS = –10 V VDS = –10 V VGS = 0 f = 1 MHz Turn-on delay time Rise time td (on) tr — — 30 235 — — ns ns Turn-off delay time Fall time td (off) tf — — 670 450 — — ns ns Body to drain diode forward voltage Body to drain diode reverse recovery time VDF trr — — –1.35 300 — — V ns Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Note: 3. Pulse test Rev.2.00 Sep 07, 2005 page 2 of 6 Test Conditions ID = –10 mA, VGS = 0 Note 3 ID = –20 A VGS = –10 V RL = 1.5 Ω IF = –45 A, VGS = 0 IF = –45 A, VGS = 0 diF/dt = 50 A/µs Note 3 2SJ217 Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating –200 sh ot ) c = ) °C 25 ID (A) Drain Current (1 (T –10 n Operation in this area is limited by RDS (on) –5 50 100 –2 –1 200 150 Tc (°C) –10 V –60 –3 V –20 VGS = –2 V 0 –4 –8 –12 Drain to Source Voltage –16 –2.0 –50 A –1.5 –20 A ID = –10 A 0 0 –2 –4 –6 Gate to Source Voltage Rev.2.00 Sep 07, 2005 page 3 of 6 –10 –8 –10 VGS (V) 0 –1 –2 –3 –4 Gate to Source Voltage –5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Static Drain to Source on State Resistance RDS (on) (Ω) Pulse Test 75°C –20 VDS (V) –2.5 –0.5 25°C Tc = –25°C 0 –20 Drain to Source Saturation Voltage vs. Gate to Source Voltage –1.0 –40 –30 –4 V –40 0 VDS (V) VDS = –10 V Pulse Test ID (A) –5 V –80 –50 –100 –10 –20 –50 Pulse Test –6 V –5 Typical Foward Transfer Characteristics Drain Current –100 –2 Drain to Source Voltage Typical Output Characteristics ID (A) s tio 0 Case Temperature Drain Current µs s m ra –20 m 10 Ta = 25°C 0 Drain to Source Saturation Voltage VDS (on) (V) µs 1 = pe 50 PW –50 O 100 0 150 10 –100 C D Channel Dissipation 10 Pch (W) 200 0.5 Pulse Test 0.2 0.1 0.05 VGS = –4 V –10 V 0.02 0.01 0.005 –2 –5 –10 –20 Drain Current –50 –100 –200 ID (A) 2SJ217 0.1 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (nS) Static Drain to Source on State Resistance RDS (on) (Ω) Static Drain to Source on State Resistance vs. Temperature Pulse Test 0.08 ID = –20 A –10 A 0.06 VGS = –4 V 0.04 ID = –50 A –10 A, –20 A –10 V 0.02 0 –40 0 40 80 120 Case Temperature 160 200 100 50 Tc = –25°C 25°C 75°C 20 10 5 VDS = –10 V Pulse Test 2 –0.5 –1 Tc (°C) Capacitance C (pF) Reverse Recovery Time trr (ns) 5000 1000 500 200 –5 –10 –20 Reverse Drain Current 2000 Coss 1000 500 Crss 100 –50 IDR (A) VGS = 0 f = 1 MHz 0 –10 –8 VGS VDS –60 VDD = –10 V –25 V –50 V –12 –16 –80 ID = –45 A –100 0 40 80 Gate Charge Rev.2.00 Sep 07, 2005 page 4 of 6 120 160 Qg (nc) –40 –50 –20 200 1000 Switching Time t (ns) –40 –4 VGS (V) 0 VDD = –10 V –25 V –50 V –30 Switching Characteristics Gate to Source Voltage VDS (V) Drain to Source Voltage 0 –20 Drain to Source Voltage VDS (V) Dynamic Input Characteristics –20 –50 Ciss 200 100 –2 –20 10000 2000 –1 –10 Typical Capacitance vs. Drain to Source Voltage di / dt = 50 A / µs, VGS = 0 Ta = 25°C, Pulse Test 50 –0.5 –5 Drain Current ID (A) Body-Drain Diode Reverse Recovery Time 5000 –2 td(off) 500 tf 200 tr 100 50 20 td(on) VGS = –10 V, VDD = –30 V PW = 2 µs, duty ≤ 1 % 10 –0.5 –1 –2 –5 Drain Current –10 –20 ID (A) –50 2SJ217 Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) –100 Pulse Test –80 –60 –10 V –40 –5 V –20 VGS = 0, 5 V 0 –1.5 –2.0 Source to Drain Voltage VSD 0 –0.5 –1.0 –2.5 (V) Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.03 0.05 θch – c (t) = γ s (t) • θch – c θch – c = 0.83°C/W, Tc = 25°C 0.02 PDM 1 0.0 1s t ho pu D= lse 0.01 10 µ PW T PW T 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) Switching Time Test Circuit Waveform Vin Vout Monitor Vin Monitor 10% D.U.T. 90% RL 90% 90% Vin –10 V 50 Ω VDD = –30 V Vout td(on) Rev.2.00 Sep 07, 2005 page 5 of 6 10% tr 10% td(off) tf 2SJ217 Package Dimensions RENESAS Code Package Name MASS[Typ.] SC-65 PRSS0004ZE-A TO-3P / TO-3PV 5.0g 15.6 ± 0.3 Unit: mm 4.8 ± 0.2 1.5 0.3 19.9 ± 0.2 2.0 14.9 ± 0.2 0.5 1.0 φ3.2 ± 0.2 5.0 ± 0.3 JEITA Package Code 1.6 2.0 1.4 Max 18.0 ± 0.5 2.8 1.0 ± 0.2 3.6 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part Name Quantity Shipping Container 2SJ217-E 30 pcs Plastic magazine Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. http://www.renesas.com RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145 Renesas Technology Malaysia Sdn. Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510 © 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .3.0