BSC010N04LSI

BSC010N04LSI
MOSFET
OptiMOSTMPower-MOSFET,40V
TDSON-8FL(enlargedsourceinterconnection)
8
Features
•Optimizedforsynchronousrectification
•IntegratedmonolithicSchottky-likediode
•Verylowon-resistanceRDS(on)
•100%avalanchetested
•N-channel,logiclevel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
•Highersolderjointreliabilityduetoenlargedsourceinterconnection
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
40
V
RDS(on),max
1.05
mΩ
ID
100
A
QOSS
83
nC
QG(0V..10V)
87
nC
1
2
7
6
5
3
4
4
3
2
6
7
8
1
S1
8D
S2
7D
S3
6D
G4
5D
Type/OrderingCode
Package
Marking
RelatedLinks
BSC010N04LSI
TDSON-8 FL
010N04LI
-
1)
5
J-STD20 and JESD22
Final Data Sheet
1
Rev.2.2,2016-05-04
OptiMOSTMPower-MOSFET,40V
BSC010N04LSI
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.2.2,2016-05-04
OptiMOSTMPower-MOSFET,40V
BSC010N04LSI
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Values
Unit
Note/TestCondition
100
100
100
100
37
A
VGS=10V,TC=25°C
VGS=10V,TC=100°C
VGS=4.5V,TC=25°C
VGS=4.5V,TC=100°C
VGS=10V,TA=25°C,RthJA=50K/W1)
-
400
A
TC=25°C
-
-
50
A
TC=25°C
EAS
-
-
230
mJ
ID=50A,RGS=25Ω
Gate source voltage
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
139
2.5
W
TC=25°C
TA=25°C,RthJA=50K/W1)
Operating and storage temperature
Tj,Tstg
-55
-
150
°C
IEC climatic category;
DIN IEC 68-1: 55/150/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
ID,pulse
-
Avalanche current, single pulse
IAS
Avalanche energy, single pulse
Continuous drain current
Pulsed drain current2)
3)
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case,
bottom
Values
Min.
Typ.
Max.
RthJC
-
0.5
0.9
K/W
-
Thermal resistance, junction - case,
top
RthJC
-
-
20
K/W
-
Device on PCB,
6 cm2 cooling area1)
RthJA
-
-
50
K/W
-
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See Diagram 3 for more detailed information
3)
See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.2.2,2016-05-04
OptiMOSTMPower-MOSFET,40V
BSC010N04LSI
3Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
V(BR)DSS
Breakdown voltage temperature
coefficient
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=10mA
30
-
mV/K ID=10mA,referencedto25°C
1.2
-
2
V
VDS=VGS,ID=250µA
IDSS
-
3
0.5
-
mA
VDS=32V,VGS=0V,Tj=25°C
VDS=32V,VGS=0V,Tj=125°C
Gate-source leakage current
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
1.1
0.9
1.4
1.05
mΩ
VGS=4.5V,ID=50A
VGS=10V,ID=50A
Gate resistance1)
RG
-
0.8
1.6
Ω
-
Transconductance
gfs
130
260
-
S
|VDS|>2|ID|RDS(on)max,ID=50A
Unit
Note/TestCondition
Min.
Typ.
Max.
40
-
dV(BR)DSS/dTj -
Gate threshold voltage
VGS(th)
Zero gate voltage drain current
Table5Dynamiccharacteristics
Parameter
Symbol
Values
Min.
Typ.
Max.
Ciss
-
6200
8680
pF
VGS=0V,VDS=20V,f=1MHz
Coss
-
1900
2660
pF
VGS=0V,VDS=20V,f=1MHz
Reverse transfer capacitance
Crss
-
140
280
pF
VGS=0V,VDS=20V,f=1MHz
Turn-on delay time
td(on)
-
22
-
ns
VDD=20V,VGS=10V,ID=30A,
RG,ext=1.6Ω
Rise time
tr
-
48
-
ns
VDD=20V,VGS=10V,ID=30A,
RG,ext=1.6Ω
Turn-off delay time
td(off)
-
72
-
ns
VDD=20V,VGS=10V,ID=30A,
RG,ext=1.6Ω
Fall time
tf
-
17
-
ns
VDD=20V,VGS=10V,ID=30A,
RG,ext=1.6Ω
Input capacitance1)
1)
Output capacitance
1)
1)
Defined by design. Not subject to production test
Final Data Sheet
4
Rev.2.2,2016-05-04
OptiMOSTMPower-MOSFET,40V
BSC010N04LSI
Table6Gatechargecharacteristics1)
Parameter
Symbol
Gate to source charge
Values
Unit
Note/TestCondition
-
nC
VDD=20V,ID=50A,VGS=0to10V
9.9
-
nC
VDD=20V,ID=50A,VGS=0to10V
-
14
20
nC
VDD=20V,ID=50A,VGS=0to10V
Qsw
-
19
-
nC
VDD=20V,ID=50A,VGS=0to10V
Gate charge total
Qg
-
87
122
nC
VDD=20V,ID=50A,VGS=0to10V
Gate plateau voltage
Vplateau
-
2.4
-
V
VDD=20V,ID=50A,VGS=0to10V
Gate charge total
Qg
-
45
63
nC
VDD=20V,ID=50A,VGS=0to4.5V
Gate charge total, sync. FET
Qg(sync)
-
76
-
nC
VDS=0.1V,VGS=0to10V
Qoss
-
83
116
nC
VDD=20V,VGS=0V
Unit
Note/TestCondition
Min.
Typ.
Max.
Qgs
-
15
Gate charge at threshold
Qg(th)
-
Gate to drain charge2)
Qgd
Switching charge
2)
2)
2)
Output charge
Table7Reversediode
Parameter
Symbol
Diode continuous forward current
Values
Min.
Typ.
Max.
IS
-
-
100
A
TC=25°C
Diode pulse current
IS,pulse
-
-
400
A
TC=25°C
Diode forward voltage
VSD
-
0.57
0.7
V
VGS=0V,IF=20A,Tj=25°C
Reverse recovery charge
Qrr
-
20
-
nC
VR=20V,IF=20A,diF/dt=400A/µs
1)
2)
See ″Gate charge waveforms″ for parameter definition
Defined by design. Not subject to production test
Final Data Sheet
5
Rev.2.2,2016-05-04
OptiMOSTMPower-MOSFET,40V
BSC010N04LSI
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Draincurrent
160
120
140
100
120
80
ID[A]
Ptot[W]
100
80
60
60
40
40
20
20
0
0
40
80
120
0
160
0
40
80
TC[°C]
120
160
TC[°C]
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
101
10
1 µs
10 µs
100 µs
102
100
1 ms
0.5
ZthJC[K/W]
ID[A]
10 ms
DC
1
10
0.2
10
-1
0.1
0.05
0.02
0.01
100
10-1
10-1
10-2
100
101
102
10-3
single pulse
10-6
10-5
10-4
VDS[V]
10-2
10-1
100
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tp);parameter:D=tp/T
6
Rev.2.2,2016-05-04
OptiMOSTMPower-MOSFET,40V
BSC010N04LSI
Diagram5:Typ.outputcharacteristics
800
Diagram6:Typ.drain-sourceonresistance
2.0
5V
4.5 V
10 V
700
4V
3.5 V
600
1.5
3.2 V
3.5 V
400
RDS(on)[mΩ]
ID[A]
500
3.2 V
300
4V
4.5 V
5V
1.0
6V
8V
10 V
3V
200
0.5
2.8 V
100
0
0
1
2
0.0
3
0
20
40
VDS[V]
60
80
100
ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.forwardtransconductance
400
320
320
240
240
ID[A]
gfs[S]
400
160
160
150 °C
25 °C
80
0
80
0
1
2
3
4
5
0
0
VGS[V]
50
75
100
ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
25
gfs=f(ID);Tj=25°C
7
Rev.2.2,2016-05-04
OptiMOSTMPower-MOSFET,40V
BSC010N04LSI
Diagram9:Drain-sourceon-stateresistance
Diagram10:Typ.gatethresholdvoltage
2.0
2.5
2.0
1.5
1.5
VGS(th)[V]
RDS(on)[mΩ]
max
1.0
typ
1.0
0.5
0.5
0.0
-60
-20
20
60
100
140
0.0
-60
180
-20
20
Tj[°C]
60
100
140
RDS(on)=f(Tj);ID=50A;VGS=10V
VGS(th)=f(Tj);VGS=VDS;IDS=10mA
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
4
10
180
Tj[°C]
103
Ciss
-55 °C
25 °C
125 °C
150 °C
Coss
102
IF[A]
C[pF]
103
Crss
101
102
100
101
0
10
20
30
40
10-1
0.0
VDS[V]
0.8
1.2
VSD[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
0.4
IF=f(VSD);parameter:Tj
8
Rev.2.2,2016-05-04
OptiMOSTMPower-MOSFET,40V
BSC010N04LSI
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
2
10
12
20 V
10
8V
25 °C
32 V
100 °C
8
VGS[V]
IAV[A]
125 °C
101
6
4
2
100
100
101
102
103
0
0
20
tAV[µs]
40
60
80
100
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
VGS=f(Qgate);ID=50Apulsed;parameter:VDD
Diagram15:Typ.drain-sourceleakagecurrent
Gate charge waveforms
10-2
125 °C
10-3
100 °C
IDSS[A]
75 °C
10-4
25 °C
-5
10
10-6
0
5
10
15
20
25
30
35
VSD[V]
IDSS=f(VDS);VGS=0V;parameter:Tj
Final Data Sheet
9
Rev.2.2,2016-05-04
OptiMOSTMPower-MOSFET,40V
BSC010N04LSI
5PackageOutlines
Figure1OutlineTDSON-8FL,dimensionsinmm/inches
Final Data Sheet
10
Rev.2.2,2016-05-04
OptiMOSTMPower-MOSFET,40V
BSC010N04LSI
Figure2OutlineFootprint(TDSON-8FL)
Final Data Sheet
11
Rev.2.2,2016-05-04
OptiMOSTMPower-MOSFET,40V
BSC010N04LSI
Figure3OutlineTape(TDSON-8FL)
Final Data Sheet
12
Rev.2.2,2016-05-04
OptiMOSTMPower-MOSFET,40V
BSC010N04LSI
RevisionHistory
BSC010N04LSI
Revision:2016-05-04,Rev.2.2
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.2
2016-05-04
Update footnotes and insert max values
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TrademarksupdatedAugust2015
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©2016InfineonTechnologiesAG
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Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
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Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
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Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
13
Rev.2.2,2016-05-04
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