IPC302N25N3A Data Sheet

MOSFET
MetalOxideSemiconductorFieldEffectTransistor
BareDie
OptiMOS™3PowerMOSTransistorChip
IPC302N25N3A
DataSheet
Rev.2.5
Final
Industrial&Multimarket
OptiMOS™3PowerMOSTransistorChip
IPC302N25N3A
1Description
PowerMOSTransistorChip
•N-channelenhancementmode
•Foradditionalcharacteristicandmaxratingrefertothedatasheetof
IPP200N25N3G
•AQL0.65forvisualinspectionaccordingtofailurecatalogue
•ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C
•Diebond:solderedorglued
•Backsidemetallization:NiVsystem
•Frontsidemetallization:AlCusystem
•Passivation:nitride(onlyonedgestructure)
•Package:sawnonfoil
Table1KeyPerformanceParameters
Parameter
Value
Unit
V(BR)DSS
250
V
1)
RDS(on)
20
mΩ
Die size
6.7 x 4.5
mm2
Thickness
250
µm
Type/OrderingCode
Package
IPC302N25N3A
Chip
Drain
Gate
Source
Marking
RelatedLinks
not defined
-
2ElectricalCharacteristicsonWaferLevel
atTj=25°C,unlessotherwisespecified
Table2
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
3
4
V
VDS=VGS,ID=270µA
-
0.1
1
µA
VGS=0V,VDS=200V
-
1
100
nA
VGS=20V,VDS=0V
100
mΩ
VGS=10V,ID=2.0A
1.2
V
VGS=0V,IF=1A
-
mJ
ID =30 A, RGS =25 Ω
Min.
Typ.
Max.
V(BR)DSS
250
-
Gate threshold voltage
VGS(th)
2
Zero gate voltage drain current
IDSS
Gate-source leakage current
IGSS
Drain-source on- resistance
RDS(on)
-
16
Reverse diode forward on-voltage
VSD
-
0.7
Avalanche energy, single pulse
EAS
2)
4)
-
40
3)
1)
packaged in a PG-TO220-3 (see ref. product)
typicalbaredieRDS(on);VGS=10V
3)
limited by wafer test-equipment
4)
Wafer tested. For general avalanche capability refer to the datasheet of IPP200N25N3 G
2)
Final Data Sheet
2
Rev.2.5,2014-07-23
OptiMOS™3PowerMOSTransistorChip
IPC302N25N3A
3PackageOutlines
Figure1OutlineChip,dimensionsinµm
Final Data Sheet
3
Rev.2.5,2014-07-23
OptiMOS™3PowerMOSTransistorChip
IPC302N25N3A
RevisionHistory
IPC302N25N3A
Revision:2014-07-23,Rev.2.5
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.5
2014-07-23
Release Final Version
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Publishedby
InfineonTechnologiesAG
81726München,Germany
©2014InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
4
Rev.2.5,2014-07-23