Developmental PTF181301 LDMOS RF Power Field Effect Transistor 130 W, 1805–1880 MHz Description Features The PTF181301 is a 130 W, internally matched GOLDMOS FET intended for GSM and EDGE applications in the 1805 to 1880 MHz band. Full gold metallization ensures excellent device lifetime and reliability. • Broadband internal matching • Typical EDGE performance - Average output power = 55 W - Gain = 15.5 dB - Efficiency = 32% - EVM = 1.7% • Typical CW performance - Output power at P–1dB = 150 W - Gain = 14.5 dB - Efficiency = 47% • Integrated ESD protection: Human Body Model, Class 1 (minimum) • Excellent thermal stability • Low HCI drift • Capable of handling 10:1 VSWR @ 28 V, 130 W (CW) output power EDGE EVM Performance EVM & Efficiency vs. Output Power VDD = 28 V, IDQ = 1.8 A, f = 1879.8 MHz 40 Efficiency 3 30 2 20 1 Efficiency (%) EVM RMS (Average %) 4 10 EVM 0 0 35 38 40 43 45 48 50 PTF181301A Package 20260 Output Power (dBm) ESD: Electrostatic discharge sensitive device—observe handling precautions! RF Characteristics at TCASE = 25°C unless otherwise indicated EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 1.8 A, P OUT = 55 W, f = 1879.8 MHz Characteristic Symbol Error Vector Magnitude Min Typ Max Unit EVM (RMS) — 1.7 — % Modulation Spectrum @ 400 kHz ACPR — –60 — dBc Modulation Spectrum @ 600 kHz ACPR — –73 — dBc Gain Gps — 15.5 — dB Drain Efficiency ηD — 32 — % Symbol Min Typ Max Unit Gain Gps — 15.5 — dB Drain Efficiency at –30 dBc IM3 ηD — 35 — % Intermodulation Distortion IMD — –30 — dBc Two–Tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 1.8 A, POUT = 130 W PEP, f = 1880 MHz, tone spacing = 1 MHz Characteristic Developmental Data Sheet 1 of 4 2004-04-28 Developmental PTF181301 DC Characteristics at TCASE = 25°C unless otherwise indicated Characteristic Conditions Symbol Min Typ Max Unit Drain–Source Breakdown Voltage VGS = 0 V, IDS = 10 µA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS — — 1.0 µA On–State Resistance VGS = 10 V, V DS = 0.1 V RDS(on) — 0.07 — Ω Operating Gate Voltage VDS = 28 V, IDQ = 1.8 A VGS 2.5 3.2 4.0 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain–Source Voltage VDSS 65 V Gate–Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 350 W 2.0 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 130 W CW) RθJC 0.50 °C/W Developmental Data Sheet 2 of 4 2004-04-28 Developmental PTF181301 Ordering Information Type PTF181301A Package Outline 20260 Package Description Thermally enhanced, flange mount Marking PTF181301A Package Outline Specifications Package 20260 45° X (2.03 [.080]) 2X 12.70 [.500] 4X R 1.52 [.060] D (2X 4.83±0.50 [.190±.020]) S +0.10 LID 13.21 -0.15 [.520 +.004 ] -.006 13.72 [.540] 2X 3.25 [.128] 23.37±0.51 [.920±.020] 2X 1.63 [.064] R G SPH 1.57 [.062] 0.51 [.020] 22.35±0.23 [.880±.009] 4.11±0.38 [.162±.015] 0.038 [.0015] -A27.94 [1.100] 34.04 [1.340] 1.02 [.040] ERA-H-30260-2-1-2302 Notes: Unless otherwise specified 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. Pins: D = drain, S = source, G = gate 4. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products Developmental Data Sheet 3 of 4 2004-04-28 PTF181301 Revision History: 04-04-28 Previous Version: none Page Subjects (major changes since last revision) Developmental Data Sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] To request other information, contact us at: +1 877 465 3667 (1-877-GOLDMOS) USA or +1 408 776 0600 International GOLDMOS® is a registered trademark of Infineon Technologies AG. Edition 04-04-28 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany © Infineon Technologies AG 2004. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non–infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life–support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life–support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 4 of 4