APPLICATION NOTE Replacing Toshiba® TC58BVG1S3HTAI0 with Macronix MX30LF2GE8AB 1. Introduction This application note is a guide for migrating to the Macronix MX30LF2GE8AB from the Toshiba® TC58BVG1S3HTAI0 2Gb, 3V, Internal ECC NAND flash memory. The document does not provide detailed information on the individual devices, but highlights the major similarities and differences between them. The comparison covers the general features, performance, command codes and other differences. The information in this document is based on datasheets listed in Section 11. Newer versions of the datasheets may override the contents of this document. 2. Features Both flash device families have similar features and functions as shown in Table 2-1. Table 2-1: Feature Comparison Feature Macronix MX30LF2GE8AB Toshiba TC58BVG1S3HTAI0 Vcc Voltage Range 2.7V ~ 3.6V 2.7V ~ 3.6V Bus Width x8 x8 Operating Temperature -40°C ~ 85°C -40°C ~ 85°C Interface ONFI 1.0 Standard N/A Block Size 128KB+4KB 128KB+4KB Page Size 2KB+64B 2KB+64B Internal ECC Capability 4b/528B 8b/528B OTP Size 30 pages N/A Guaranteed Good Blocks Block 0 Block 0 at Shipping Unique ID ONFI standard N/A First Command Reset (FFh) C2h/DAh/90h/95h/86h 98h/DAh/90h/15h/F6h ID Code ONFI Signature 4Fh/4Eh/46h/49h N/A Data Retention 10 Years Not Specified Package 48-TSOP (12x20mm) 48-TSOP (12x20mm) P/N: AN-0362 1 Ver.01, Dec.12, 2014 APPLICATION NOTE Replacing Toshiba® TC58BVG1S3HTAI0 with Macronix MX30LF2GE8AB 3. Performance Table 3-1 and Table 3-2 show MX30LF2GE8AB and TC58BVG1S3H Read/Write performance. Table 3-1: Read Performance (Read Latency and Sequential Read) Read Function Macronix MX30LF2GE8AB Toshiba TC58BVG1S3H Read Latency time (tR_ECC) 45us (typ.) / 70us (max.) 40us (typ.) / 120us (max.) Sequential Read time (tRC) 20ns (min.) 25ns (min.) Table 3-2: Write Performance (Program and Erase) Write Function Macronix MX30LF2GE8AB Page Program time 320us (typ.) / 600us (max.) (tPROG_ECC) Block Erase time (tERASE) 1ms (typ.) / 3.5ms (max.) NOP 4 (max.) Write/Erase Cycles*1 (Endurance) 100,000 Toshiba TC58BVG1S3H 330us (typ.) / 700us (max.) 2.5ms (typ.) / 5ms (max.) 4 (max.) Not Specified Note 1: 100K Endurance cycle with ECC protection. 4. DC Characteristics Read/Write power requirements (Table 4-1) and I/O voltage limits (Table 4-2) are similar. Table 4-1: Read / Write Current DC Characteristic Macronix MX30LF2GE8AB Sequential Read Current (ICC1) 20mA (typ.) / 30mA (max.) Program Current (ICC2) 20mA (typ.) / 30mA (max.) Erase Current (ICC3) 15mA (typ.) / 30mA (max.) Standby Current – CMOS 10uA (typ.) / 50uA (max.) Toshiba TC58BVG1S3H 30mA (max.) 30mA (max.) 30mA (max.) 50uA (max.) Table 4-2: Input / Output Voltage DC Characteristic Macronix MX30LF2GE8AB Toshiba TC58BVG1S3H Input Low Voltage (VIL) -0.3V (min.) / 0.2VCC (max.) -0.3V (min.) / 0.2Vcc (max.) Input High Voltage (VIH) 0.8VCC (min.) / VCC+0.3V (max.) 0.8Vcc (min.) / Vcc+0.3V (max.) Output Low Voltage (VOL) 0.2V (max.) 0.2V (max.) Output High Voltage (VOH) VCC-0.2 (min.) Vcc-0.2 (min.) P/N: AN-0362 2 Ver.01, Dec.12, 2014 APPLICATION NOTE Replacing Toshiba® TC58BVG1S3HTAI0 with Macronix MX30LF2GE8AB 5. Package Pin/Ball Definition Package physical dimensions are similar to each other. For detailed information, please refer to the individual datasheets. Table 5-1 contains the differences in pin assignments between the Macronix and Toshiba devices and shows that the TC58BVG1S3HTAI0 can be replaced by the MX30LF2GE8AB-TI without pin conflicts. Figure 5-1: 48-TSOP (12x20mm) Package and Pin Layout Comparison NC NC NC NC NC NC R/B# RE# CE# NC NC VCC VSS NC NC CLE ALE WE# WP# NC NC NC NC NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 MX30LF2GE8AB-TI 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 VSS*1 NC NC NC IO7 IO6 IO5 IO4 NC VCC*1 DNU VCC VSS NC VCC*1 NC IO3 IO2 IO1 IO0 NC NC NC VSS*1 NC NC NC NC NC NC R/B# RE# CE# NC NC VCC VSS NC NC CLE ALE WE# WP# NC NC NC NC NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 TC58BVG1S3HTAI0 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 NC NC NC NC I/O7 I/O6 I/O5 I/O4 NC NC NC VCC VSS NC NC NC I/O3 I/O2 I/O1 I/O0 NC NC NC NC Pin38: DNU Note: 1. These pins might not be connected internally. However it is recommended to connect these pins to power(or ground) as designated for ONFI compatibility. Table 5-1: 48-TSOP Package Pin Definition Brand Macronix Toshiba Part Name MX30LF2GE8AB-TI TC58BVG1S3HTAI0 #38 pin DNU*1 NC*1 #34, #39 pin VCC NC #25, #48 pin VSS NC Note If pins are left unconnected, pin functions are compatible Macronix pins 34 and 39 can be left unconnected. Macronix pins 25 and 48 can be left uncontended. Note: DNU= Do not use; NC= Not Connected P/N: AN-0362 3 Ver.01, Dec.12, 2014 APPLICATION NOTE Replacing Toshiba® TC58BVG1S3HTAI0 with Macronix MX30LF2GE8AB 6. Command Set 6-1 Basic Commands Basic command sets and status checking methods are similar with the minor differences highlighted in bold. Table 6-1: Command Table Command Random Data Input Random Data Output Page Read Read ID Reset Page Program Cache Program Block Erase Read Status Read Parameter Page Unique ID Read Set Feature Get Feature Status Enhance Read ECC Status Read Macronix Toshiba MX30LF2GE8AB TC58BVG1S3H 1st Cycle 2nd Cycle 1st Cycle 2nd Cycle 85h 85h 05h E0h 05h E0h 00h 30h 00h 30h 90h 90h FFh FFh 80h 10h 80h 10h 80h 15h 60h D0h 60h D0h 70h 70h ECh EDh EFh EEh 71h 78h 7Ah - Table 6-2: Two-Plane Command Table Macronix MX30LF2GE8AB Command 1st 2nd 3rd 4th Two-Plane Program Two-Plane Cache Program Two-Plane Block Erase P/N: AN-0362 Toshiba TC58BVG1S3H Cycle Cycle Cycle Cycle 1st Cycle 80h 80h 60h 11h 11h D1h 80h 80h 60h 10h 15h D0h 80h 60h 4 2nd Cycle 3rd Cycle 4th Cycle 11h 60h 80h D0h 10h - Ver.01, Dec.12, 2014 APPLICATION NOTE Replacing Toshiba® TC58BVG1S3HTAI0 with Macronix MX30LF2GE8AB 6-2 Status Register When a Read, Program, or Erase operation is in progress, either the “Ready/Busy# Pin Checking” or “Status Output Checking” method may be used to monitor the operation. Both are standard NAND flash algorithms and can be used for both device families. Table 6-3 shows the Status Output provided by the Read Status command (70h). Refer to Table 6-4 for the encoding of the Macronix Internal ECC Status bits. Table 6-5 compares the Status Output of the Macronix Two-Plane Status Read command (78h) and the Toshiba Multi-Page Status Read command (71h). Table 6-3: Status Output Status Bit Macronix MX30LF2GE8AB SR[0] SR[1] SR[2] SR[3] SR[4] SR[5] SR[6] SR[7] Chip PGM/ERS/READ Status: Pass/Fail Cache Program status: Pass/Fail Reserved Internal ECC Status*1 1 Internal ECC Status* PGM/ERS/Read Internal Controller: Ready/Busy PGM/ERS/Read Status: Ready/Busy Write Protected Toshiba TC58BVG1S3H Chip PGM/ERS/READ Status: Pass/Fail Reserved Reserved Rewrite Recommended Reserved PGM/ERS/Read Status: Ready/Busy PGM/ERS/Read Status: Ready/Busy Write Protected Note 1: For Macronix internal ECC status, refer to Table 6-4. Table 6-4: Macronix Internal ECC Status SR bits and value Status of ECC correction SR[4] SR[3] SR[0] 0 0 1 Uncorrectable 0 0 0 0 or 1-bit error and correctable 1 0 0 2-bit error and correctable 0 1 0 3-bit error and correctable 1 1 0 4-bit error and correctable Table 6-5: Two-Plane Status Output Status Bit Macronix MX30LF2GE8AB SR[0] SR[1] SR[2] SR[3] SR[4] SR[5] SR[6] SR[7] P/N: AN-0362 Selected Plane PGM/ERS/READ Status: Pass/Fail Selected Plane Cache Program Status: Pass/Fail Reserved Selected Plane Internal ECC Status Selected Plane Internal ECC Status PGM/ERS/Read internal controller: Ready/Busy PGM/ERS/Read Status: Ready/Busy Write Protected 5 Toshiba TC58BVG1S3H Chip Status: Pass/Fail Plane 0 Status: Pass/Fail Plane 1 Status: Pass/Fail Reserved Reserved PGM/ERS/Read Status: Ready/Busy PGM/ERS/Read Status: Ready/Busy Write Protected Ver.01, Dec.12, 2014 APPLICATION NOTE Replacing Toshiba® TC58BVG1S3HTAI0 with Macronix MX30LF2GE8AB Toshiba® ECC correction status is reported in the ECC Status Register, which can read by the ECC Status Read command (7Ah). The ECC Status Read isn’t supported for multi-page read operation. Table 6-6 shows the ECC Status Register bit assignments. Tables 6-7 and 6-8 show how ECC Status and Sector Information are encoded in bits [3:0] and [7:4], respectively. Table 6-6: Toshiba ECC Status Register Structure bit 7 bit 6 bit 5 bit 4 bit 3 Sector Information bit 1 bit 0 ECC Status Table 6-7: Toshiba Internal ECC Status ECC Status Register bit 3 bit 2 bit 1 bit 0 0 0 0 0 0 0 0 1 0 0 1 0 0 0 1 1 0 1 0 0 0 1 0 1 0 1 1 0 0 1 1 1 1 0 0 0 1 1 1 1 Status of ECC correction No Error 1-bit error and correctable 2-bit error and correctable 3-bit error and correctable 4-bit error and correctable 5-bit error and correctable 6-bit error and correctable 7-bit error and correctable 8-bit error and correctable Uncorrectable Table 6-8: Toshiba Sector Information ECC Status Register bit 7 bit 6 bit 5 bit 4 0 0 0 0 0 0 0 1 0 0 1 0 0 0 1 1 Other P/N: AN-0362 bit 2 Sector Information 1st Sector (Main and Spare area) 2nd Sector (Main and Spare area) 3rd Sector (Main and Spare area) 4th Sector (Main and Spare area) Reserved 6 Ver.01, Dec.12, 2014 APPLICATION NOTE Replacing Toshiba® TC58BVG1S3HTAI0 with Macronix MX30LF2GE8AB 7. Read ID Command The ID of the Macronix MX30LF2GE8AB begins with a one-byte Manufacturer Code followed by a four-byte Device ID. While the same command set is used to read the Manufacturer ID, Device ID, and flash structure, the IDs are different, allowing software to identify the device manufacturer and device type (Table 7-1). Table 7-1: Manufacturer and Device IDs ID code Value 1st Byte 2nd Byte IO1, IO0 IO3, IO2 3rd Byte IO5, IO4 IO6 4th Byte 5th Byte IO7 IO1, IO0 IO2 IO7, IO3 IO5, IO4 IO6 IO1, IO0 IO3, IO2 IO6~IO4 IO7 P/N: AN-0362 Macronix MX30LF2GE8AB Toshiba TC58BVG1S3H C2h/DAh/90h/95h/86h Manufacturer Code Device Identifier Number of Die per Chip Enable Cell Structure Number of Simultaneously Programmed Pages Interleaved Programming Between Multiple Chips Cache Program Page Size (excluding Spare Area) Spare Area Size Sequential Read Cycle Time (tRC) Block Size (excluding Spare Area) Organization ECC Level Requirement Number of Planes per CE Plane Size Internal ECC Enabled/Disabled 98h/DAh/90h/15h/F6h Manufacturer Code Device Identifier Number of Die per Chip Enable Cell Structure 7 Reserved Reserved Reserved Page Size (excluding Spare Area) Reserved Reserved Block Size (excluding Spare Area) Organization Reserved Number of Planes per CE Reserved Internal ECC Enabled/Disabled Ver.01, Dec.12, 2014 APPLICATION NOTE Replacing Toshiba® TC58BVG1S3HTAI0 with Macronix MX30LF2GE8AB 8. Internal ECC Function 8-1 Enabling Internal ECC Macronix and Toshiba® provide Internal ECC functions which generate ECC code internally when programming data into the memory array. The Internal ECC function is always enabled in both devices. Table 8-1: Internal ECC Turn on Setting Comparison Device Turn On Turn Off Note MX30LF2GE8AB TC58BVG1S3H Always enabled Always enabled N/A N/A Always enabled Always enabled 8-2 Internal ECC Protected Areas Macronix provides 4-bit ECC correction. Toshiba® provides 8-bit ECC correction. Table 8-2 shows Internal ECC protected areas provided by the two devices. Each spare area is associated with its corresponding main array area. For example, Spare Area 0 is associated with Main Array 0 only. Both devices have a maximum NOP (Number of Partial-Page) programming limitation of 4, so the user needs to program the main array and corresponding spare area together during a single programming operation. Table 8-2: Internal ECC Protected Area Main Array (2KB) Device MX30LF2GE8AB TC58BVG1S3H P/N: AN-0362 Spare Area (64B) Main 0 Main 1 Main 2 Main 3 Spare 0 Spare 1 Spare 2 Spare 3 512B 512B 512B 512B 512B 512B 512B 512B 16B*1 16B*1 16B 16B 16B 16B 16B 16B 8 Ver.01, Dec.12, 2014 APPLICATION NOTE Replacing Toshiba® TC58BVG1S3HTAI0 with Macronix MX30LF2GE8AB 9. Power-Up Timing Macronix and Toshiba® power-up sequences are similar, but the timing is slightly different. Although both devices use 2.7V (VCC min.) as the start point, timing references are different. Check the system timing to determine if adjustments are needed. Table 9-1: Power-Up Timing H/W Timing Characteristic Vcc (min.) to WE# low Vcc (min.) to R/B# high Vcc (min.) to R/B# low Macronix MX30LF2GE8AB 1ms (max.)*1 N/A 10us (max.) Toshiba TC58BVG1S3H N/A 1ms (max.) 100us (max.) Note 1: Toshiba requires Reset command as the first command, but Macronix does not. Macronix requires an initialization delay during power on. Vcc(min.) VCC WE# R/B# Figure 9-1: Power-Up Timing 10. Summary Macronix MX30LF2GE8AB and Toshiba® TC58BVG1S3H NAND have similar features and pinouts. While basic Read, Program, and Erase commands are the same, there are slight differences in how the Internal ECC correction status is reported. Overall, device migration may require minimal or no firmware modifications. P/N: AN-0362 9 Ver.01, Dec.12, 2014 APPLICATION NOTE Replacing Toshiba® TC58BVG1S3HTAI0 with Macronix MX30LF2GE8AB 11. Reference Table 11-1 shows the datasheet versions used for comparison in this application note. For the most current, detailed Macronix specification, please refer to the Macronix website at http://www.macronix.com Table 11-1: Datasheet Version Datasheet Location MX30LF2GE8AB TC58BVG1S3HTAI0 Website Website Date Issue Revision Sept. 2014 Jan. 2013 Rev. 0.03 Rev. 1.00 Note: Macronix data sheet is subject to change without notice. 12. Appendix Cross Reference Table 12-1 shows basic part number and package information for the Macronix MX30LF4G28AB and Toshiba® TC58BVG1S3H product families. Table 12-1: Part Number Cross Reference Density Macronix Part No. Toshiba Part No. 2Gb MX30LF2GE8AB-TI TC58BVG1S3HTAI0 Package 48-TSOP Dimension 12x20mm 13. Revision History Revision 1.0 P/N: AN-0362 Description Initial Release 10 Date Dec. 12, 2014 Ver.01, Dec.12, 2014 APPLICATION NOTE Replacing Toshiba® TC58BVG1S3HTAI0 with Macronix MX30LF2GE8AB Except for customized products which have been expressly identified in the applicable agreement, Macronix's products are designed, developed, and/or manufactured for ordinary business, industrial, personal, and/or household applications only, and not for use in any applications which may, directly or indirectly, cause death, personal injury, or severe property damages. In the event Macronix products are used in contradicted to their target usage above, the buyer shall take any and all actions to ensure said Macronix's product qualified for its actual use in accordance with the applicable laws and regulations; and Macronix as well as it’s suppliers and/or distributors shall be released from any and all liability arisen therefrom. Copyright© Macronix International Co., Ltd. 2015. All rights reserved, including the trademarks and tradename thereof, such as Macronix, MXIC, MXIC Logo, MX Logo, Integrated Solutions Provider, NBit, Nbit, NBiit, Macronix NBit, eLiteFlash, HybridNVM, HybridFlash, XtraROM, Phines, KH Logo, BE-SONOS, KSMC, Kingtech, MXSMIO, Macronix vEE, Macronix MAP, Rich Au-dio, Rich Book, Rich TV, and FitCAM. The names and brands of third party referred thereto (if any) are for identification purposes only. For the contact and order information, please visit Macronix’s Web site at: http://www.macronix.com P/N: AN-0362 11 Ver.01, Dec.12, 2014