LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTC114YLT1G Applications Inverter, Interface, Driver • 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. • 1 2 SOT-23 1 BASE We declare that the material of product compliance with RoHS requirements. 3 COLLECTOR R2 2 EMITTER zAbsolute maximum ratings (Ta=25°C) Parameter R1 Symbol Limits Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 70 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 °C Storage temperature Tstg °C −55 to +150 DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTC114YLT1G A8D 10 47 3000/Tape & Reel LDTC114YLT3G A8D 10 47 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Input voltage Output voltage Input current Min. Typ. Max. VI(off) − − 0.3 VI(on) 1.4 − − VO(on) − 0.1 0.3 V II − − 0.88 mA VI=5V Symbol Unit V Conditions VCC=5V, IO=100µA VO=0.3V, IO=1mA IO/II=5mA/0.25mA IO(off) − − 0.5 µA VCC=50V, VI=0V DC current gain GI 68 − − − VO=5V, IO=5mA Input resistance R1 7 10 13 kΩ − Resistance ratio R2/R1 3.7 4.7 5.7 − − − 250 − MHz Output current Transition frequency fT ∗ VCE=10V, IE=−5mA, f=100MHz ∗ Characteristics of built-in transistor 1/3 LESHAN RADIO COMPANY, LTD. LDTC114YLT1G zElectrical characteristic curves 100 10m 5m VO=0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI(on) (V) 50 20 10 Ta=−40°C 25°C 100°C 5 2 1 500m 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m VCC=5V 2m 1m 500µ Ta=100°C 25°C −40°C 200µ 100µ 50µ 20µ 10µ 5µ 2µ 1µ 0 50m 100m 0.5 OUTPUT CURRENT : IO (A) 2.0 2.5 3.0 Fig.2 Output current vs. input voltage (OFF characteristics) 1 VO=5V 500 lO/lI=20 500m OUTPUT VOLTAGE : VO(on) (V) DC CURRENT GAIN : GI 1.5 INPUT VOLTAGE : VI(off) (V) Fig.1 Input voltage vs. output current (ON characteristics) 1k 1.0 Ta=100°C 25°C −40°C 200 100 50 20 10 5 2 200m Ta=100°C 25°C −40°C 100m 50m 20m 10m 5m 2m 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current 2/3 LESHAN RADIO COMPANY, LTD. LDTC114YLT1G SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 A B C D G H J G C D MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0034 0.0140 0.0350 0.0830 0.0177 0.0070 0.0285 0.0401 0.1039 0.0236 DIM B S H K J K L S V MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.35 0.89 2.10 0.45 0.177 0.69 1.02 2.64 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm 3/3