LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTC115TET1G Applications Inverter, Interface, Driver • 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. • 1 2 SC-89 We declare that the material of product compliance with RoHS requirements. R1 1 BASE zAbsolute maximum ratings (Ta=25°C) Symbol Limits Unit Collector-base voltage Collector-emitter voltag Emitter-base voltage Collector current VCBO VCEO VEBO IC 50 V V V mA Collector power dissipation Junction temperature Storage temperature Pc Tj Tstg Parameter 50 5 100 200 150 −55 to +150 3 COLLECTOR 2 EMITTER mW °C °C DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTC115TET1G H6 100 3000/Tape & Reel LDTC115TET3G H6 100 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Input resistance Transition frequency ∗ Characteristics of built-in transistor. Symbol Min. Typ. Max. Unit BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) 50 50 5 − − − 100 70 − − − − − − − 250 100 250 − − − 0.5 0.5 0.3 600 130 − V V V µA µA V − kΩ MHz hFE R1 fT ∗ Conditions IC=50µA IC=1mA IE=50µA VCB=50V VEB=4V IC/IB=1mA/0.1mA IC=1mA, VCE=5V − VCE=10V, IE=−5mA, f=100MHz 1/2 LESHAN RADIO COMPANY, LTD. LDTC115TET1G SC-89 NOTES: 1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2.CONTROLLING DIMENSION: MILLIMETERS 3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4.463C-01 OBSOLETE, NEW STANDARD 463C-02. 3/3