LNTK3043NT5G Power MOSFET S

LESHAN RADIO COMPANY, LTD.
Power MOSFET
20 V, 285 mA, N−Channel with ESD
Protection, SOT−723
Features
•
•
•
•
•
•
•
•
Enables High Density PCB Manufacturing
44% Smaller Footprint than SC−89 and 38% Thinner than SC−89
Low Voltage Drive Makes this Device Ideal for Portable Equipment
Low Threshold Levels, VGS(TH) < 1.3 V
Low Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin
Environments such as Portable Electronics
Operated at Standard Logic Level Gate Drive, Facilitating Future
Migration to Lower Levels Using the Same Basic Topology
These are Pb−Free Devices
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
LNTK3043NT5G
S-LNTK3043NT5G
V(BR)DSS
RDS(on) TYP
ID Max
1.5 W @ 4.5 V
2.4 W @ 2.5 V
20 V
285 mA
5.1 W @ 1.8 V
6.8 W @ 1.65 V
Top View
3
Applications
• Interfacing, Switching
• High Speed Switching
• Cellular Phones, PDAs
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
20
V
Gate−to−Source Voltage
VGS
±10
V
Steady
State
tv5s
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
Power Dissipation
(Note 2)
Pulsed Drain Current
mA
MARKING
DIAGRAM
440
TA = 25°C
PD
mW
545
TA = 25°C
Steady
State
185
285
tv5s
Continuous Drain
Current (Note 2)
1 − Gate
2 − Source
3 − Drain
255
ID
2
ID
TA = 85°C
TA = 25°C
tp = 10 ms
155
310
IDM
400
mA
−55 to
150
°C
286
mA
Lead Temperature for Soldering Purposes
(1/8” from case for 10 seconds)
260
°C
IS
TL
SOT−723
CASE 631AA
mA
PD
Operating Junction and Storage Temperature TJ, TSTG
Source Current (Body Diode) (Note 2)
KA
210
mW
KA
M
M
Continuous Drain
Current (Note 1)
1
1
= Device Code
= Date Code
ORDERING INFORMATION
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces)
2. Surface−mounted on FR4 board using the minimum recommended pad size.
Device
LNTK3043NT5G
S-LNTK3043NT5G
Package
Shipping †
SOT−723*
8000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*These packages are inherently Pb−Free.
Rev .O 1/5
LESHAN RADIO COMPANY, LTD.
LNTK3043NT5G , S-LNTK3043NT5G
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Junction−to−Ambient – Steady State (Note 3)
RqJA
280
Junction−to−Ambient – t = 5 s (Note 3)
RqJA
228
Junction−to−Ambient – Steady State Minimum Pad (Note 4)
RqJA
400
Unit
°C/W
3. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
4. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Condition
Symbol
Min
Drain−to−Source Breakdown Voltage
VGS = 0 V, ID = 100 mA
V(BR)DSS
20
Drain−to−Source Breakdown Voltage
Temperature Coefficient
ID = 100 mA, Reference to 25°C
V(BR)DSS/TJ
Zero Gate Voltage Drain Current
VGS = 0 V,
VDS = 16 V
Typ
Max
Unit
OFF CHARACTERISTICS
TJ = 25°C
27
IDSS
mV/°C
1
TJ = 125°C
VDS = 0 V, VGS = ±5 V
Gate−to−Source Leakage Current
V
10
IGSS
mA
1
mA
1.3
V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS = VDS, ID = 250 mA
Gate Threshold Temperature Coefficient
Drain−to−Source On Resistance
0.4
VGS(TH)/TJ
−2.4
RDS(ON)
1.5
3.4
VGS = 4.5V, ID = 255 mA
1.6
3.8
VGS = 2.5 V, ID = 1 mA
2.4
4.5
VGS = 1.8 V, ID = 1 mA
5.1
10
VGS = 1.65 V, ID = 1 mA
6.8
15
VGS = 4.5V, ID = 10 mA
Forward Transconductance
VGS(TH)
VDS = 5 V, ID = 100 mA
gFS
0.275
CISS
11
COSS
8.3
CRSS
2.7
td(ON)
13
tr
15
td(OFF)
94
tf
55
VSD
0.83
mV/°C
W
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
VGS = 0 V, f = 1 MHz, VDS = 10 V
Reverse Transfer Capacitance
pF
SWITCHING CHARACTERISTICS, VGS= 4.5 V (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
VGS = 4.5 V, VDD = 5 V, ID = 10 mA,
RG = 6 W
Fall Time
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VGS = 0 V, IS= 286 mA
TJ = 25°C
TJ = 125°C
Reverse Recovery Time
Charge Time
Discharge Time
VGS = 0 V, VDD = 20 V, dISD/dt = 100 A/ms,
IS = 286 mA
Reverse Recovery Charge
0.69
tRR
9.1
ta
7.1
tb
2.0
QRR
3.7
1.2
V
ns
nC
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%
6. Switching characteristics are independent of operating junction temperatures
Rev .O 2/5
LESHAN RADIO COMPANY, LTD.
LNTK3043NT5G , S-LNTK3043NT5G
TYPICAL PERFORMANCE CURVES
0.3
VDS ≥ 5 V
2.5 V
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
0.3
VGS = 3 V to 10 V
TJ = 25°C
0.2
2.2 V
2.0 V
0.1
1.8 V
1.6 V
1.4 V
0
0
2
1
4
3
0.2
0.1
TJ = 125°C
TJ = 25°C
TJ = −55°C
0
5
1
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
5
ID = 0.255 A
TJ = 25°C
4
3
2
1
0
1
2
3
4
5
6
7
8
9
10
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 1. On−Region Characteristics
6
TJ = 25°C
5
4
VGS = 2.5 V
3
2
VGS = 4.5 V
1
0
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
9.0
1000
VGS = 0 V
8.0
VGS = 1.65 V, ID = 1 mA
7.0
6.0
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE
0.3
0.2
0.1
ID, DRAIN CURRENT (AMPS)
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
VGS = 1.8 V, ID = 10 mA
5.0
4.0
VGS = 2.5 V, ID = 10 mA
3.0
2.0
100
TJ = 150°C
TJ = 125°C
10
VGS = 4.5 V, ID = 10 mA
1.0
0
−50
2
1.5
2.5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
1
−25
0
25
50
75
100
125
150
5
10
15
20
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
Rev .O 3/5
LESHAN RADIO COMPANY, LTD.
LNTK3043NT5G , S-LNTK3043NT5G
TYPICAL PERFORMANCE CURVES
25
1000
TJ = 25°C
VDD = 5 V
ID = 10 mA
VGS = 4.5 V
Crss
t, TIME (ns)
20
15
Ciss
10
Coss
td(off)
tf
100
tr
td(on)
10
5
0
10
VDS = 0 V
5
VGS = 0 V
0
VGS
Crss
5
10
15
20
VDS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
1
1
10
RG, GATE RESISTANCE (OHMS)
100
Figure 8. Resistive Switching Time
Variation vs. Gate Resistance
0.4
IS, SOURCE CURRENT (AMPS)
C, CAPACITANCE (pF)
Ciss
VGS = 0 V
TJ = 25°C
0.3
0.2
0.1
TJ = 150°C
TJ = 125°C
0
0.4
TJ = −55°C
0.6
0.8
0.9
0.5
0.7
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
1.0
Figure 9. Diode Forward Voltage vs. Current
Rev .O 4/5
LESHAN RADIO COMPANY, LTD.
LNTK3043NT5G , S-LNTK3043NT5G
PACKAGE DIMENSIONS
SOT−723
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
−X−
D
A
b1
−Y−
3
E
1
e
HE
L
2
b 2X
0.08 (0.0032) X Y
DIM
A
b
b1
C
D
E
e
HE
L
C
MILLIMETERS
MIN
NOM
MAX
0.45
0.50
0.55
0.15
0.21
0.27
0.25
0.31
0.37
0.07
0.12
0.17
1.15
1.20
1.25
0.75
0.80
0.85
0.40 BSC
1.15
1.20
1.25
0.15
0.20
0.25
INCHES
MIN
NOM
MAX
0.018 0.020 0.022
0.0059 0.0083 0.0106
0.010 0.012 0.015
0.0028 0.0047 0.0067
0.045 0.047 0.049
0.03 0.032 0.034
0.016 BSC
0.045 0.047 0.049
0.0059 0.0079 0.0098
SOLDERING FOOTPRINT*
0.40
0.0157
0.40
0.0157
1.0
0.039
0.40
0.0157
0.40
0.0157
0.40
0.0157
SCALE 20:1
mm Ǔ
ǒinches
Rev .O 5/5