DNA30E2200PZ

DNA30E2200PZ
High Voltage Standard Rectifier
VRRM
=
2200 V
I FAV
=
30 A
VF
=
1.24 V
Single Diode
Part number
DNA30E2200PZ
Backside: anode
1
3
Features / Advantages:
Applications:
Package: TO-263 (D2Pak-HV)
● Planar passivated chips
● Very low leakage current
● Very low forward voltage drop
● Improved thermal behaviour
● Diode for main rectification
● For single and three phase
bridge configurations
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130325a
DNA30E2200PZ
Ratings
Rectifier
Conditions
Symbol
VRSM
Definition
max. non-repetitive reverse blocking voltage
TVJ = 25°C
max.
2300
Unit
V
VRRM
max. repetitive reverse blocking voltage
TVJ = 25°C
2200
V
IR
reverse current
VF
I FAV
average forward current
VF0
threshold voltage
rF
slope resistance
R thJC
thermal resistance junction to case
VR = 2200 V
TVJ = 25°C
40
µA
TVJ = 150°C
1.5
mA
TVJ = 25°C
1.26
V
1.53
V
1.24
V
30 A
IF =
60 A
IF =
30 A
IF =
60 A
TVJ = 150 °C
TC = 140°C
rectangular
R thCH
thermal resistance case to heatsink
total power dissipation
I FSM
max. forward surge current
I²t
CJ
value for fusing
junction capacitance
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
1.63
V
T VJ = 175 °C
30
A
TVJ = 175 °C
0.83
V
d = 0.5
for power loss calculation only
Ptot
typ.
VR = 2200 V
IF =
forward voltage drop
min.
13.4
mΩ
0.7
K/W
K/W
0.25
TC = 25°C
210
W
t = 10 ms; (50 Hz), sine
TVJ = 45°C
370
A
t = 8,3 ms; (60 Hz), sine
VR = 0 V
400
A
t = 10 ms; (50 Hz), sine
TVJ = 150 °C
315
A
t = 8,3 ms; (60 Hz), sine
VR = 0 V
340
A
t = 10 ms; (50 Hz), sine
TVJ = 45°C
685
A²s
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
VR = 0 V
665
A²s
TVJ = 150 °C
495
A²s
480
A²s
t = 8,3 ms; (60 Hz), sine
VR = 0 V
VR = 700 V; f = 1 MHz
TVJ = 25°C
Data according to IEC 60747and per semiconductor unless otherwise specified
7
pF
20130325a
DNA30E2200PZ
Package
Ratings
TO-263 (D2Pak-HV)
Symbol
I RMS
Definition
Conditions
RMS current
per terminal
min.
TVJ
virtual junction temperature
T op
operation temperature
max.
35
Unit
A
-55
175
°C
-55
150
°C
Tstg
storage temperature
-55
150
°C
Weight
FC
1.5
20
mounting force with clip
d Spp/App
d Spb/Apb
typ.
D
N
A
30
E
2200
PZ
IXYS Zyyww
Logo
N
4.2
mm
terminal to backside
4.7
mm
Part number
XXXXXXXXX
Part No.
60
terminal to terminal
creepage distance on surface | striking distance through air
Product Marking
g
Assembly Line
=
=
=
=
=
=
=
Diode
High Voltage Standard Rectifier
(>= 2000V)
Current Rating [A]
Single Diode
Reverse Voltage [V]
TO-263AB (D2Pak) (2HV)
000000
Date Code
Assembly Code
Ordering
Standard
Part Number
DNA30E2200PZ
Similar Part
DNA30EM2200PZ
DNA30E2200PA
DNA30E2200FE
DNA30E2200IY
Equivalent Circuits for Simulation
I
V0
R0
Marking on Product
DNA30E2200PZ
Package
TO-263AB (D2Pak) (2HV)
TO-220AC
i4-Pac (2HV)
TO-262 (I2Pak) (2HV)
* on die level
Delivery Mode
Tape & Reel
Code No.
514460
Voltage class
2200
2200
2200
2200
T VJ = 175 °C
Rectifier
V 0 max
threshold voltage
0.83
V
R 0 max
slope resistance *
10.2
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Quantity
800
Data according to IEC 60747and per semiconductor unless otherwise specified
20130325a
DNA30E2200PZ
Outlines TO-263 (D2Pak-HV)
Dim.
W
Supplier
Option
D1
L1
c2
A1
H
D
E
A
3
4
A2
L
e1
D2
1
c
2x e
2x b2
10.92
(0.430)
W
E1
All dimensions conform with
and/or within JEDEC standard.
1.78
(0.07)
3.05
(0.120)
3.81
(0.150)
9.02
(0.355)
mm (Inches)
2x b
A
A1
A2
b
b2
c
c2
D
D1
D2
E
E1
e
e1
H
L
L1
Millimeter
Inches
min
max
min
max
4.06
4.83
0.160 0.190
typ. 0.10
typ. 0.004
2.41
0.095
0.51
0.99
0.020 0.039
1.14
1.40
0.045 0.055
0.40
0.74
0.016 0.029
1.14
1.40
0.045 0.055
8.38
9.40
0.330 0.370
8.00
8.89
0.315 0.350
2.3
0.091
9.65
10.41 0.380 0.410
6.22
8.50
0.245 0.335
2,54 BSC
0,100 BSC
4.28
0.169
14.61 15.88 0.575 0.625
1.78
2.79
0.070 0.110
1.02
1.68
0.040 0.066
typ.
typ.
0.040
0.002
0.02
0.0008
2.54 (0.100)
Recommended min. foot print
1
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
3
Data according to IEC 60747and per semiconductor unless otherwise specified
20130325a
DNA30E2200PZ
Rectifier
60
103
300
VR = 0 V
TVJ = 45°C
40
250
IF
IFSM
[A]
[A]
20
TVJ = 45°C
2
It
2
200
TVJ = 150°C
TVJ = 125°C
TVJ = 25°C
0
0.5
1.0
[A s]
TVJ = 150°C
TVJ = 150°C
50 Hz, 80% VRRM
1.5
2.0
102
150
0.001
VF [V]
0.01
0.1
1
1
t [s]
Fig. 2 Surge overload current
Fig. 1 Forward current versus
voltage drop per diode
2
3
4 5 6 7 8 910
t [ms]
2
Fig. 3 I t versus time per diode
40
50
RthKA =
40
0.6 K/W
0.8 K/W
1.0 K/W
2.0 K/W
4.0 K/W
8.0 K/W
dc =
1
0.5
0.4
0.33
0.17
0.08
30
Ptot
30
dc =
1
0.5
0.4
0.33
0.17
0.08
IF(AV)M
20
[A]
20
[W]
10
10
0
0
0
10
20
30
0
25
50
IF(AV)M [A]
75 100 125 150 175 200
0
25 50 75 100 125 150 175 200
TC [°C]
Tamb [°C]
Fig. 4 Power dissipation vs. direct output current & ambient temperature
Fig. 5 Max. forward current versus
case temperature
0.8
0.6
Constants for ZthJC calculation:
ZthJC
i
Rthi (K/W)
1 0.03
0.4
[K/W]
0.2
ti (s)
0.0003
2 0.072
0.0065
3 0.131
0.027
4 0.367
0.105
5 0.1
0.8
0.0
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130325a