GBO25-16NO1 3~ 1~ Rectifier Standard Rectifier VRRM = 1600 V I DAV = 25 A I FSM = 370 A 1~ Rectifier Bridge Part number GBO25-16NO1 Backside: isolated - ~ ~ + Features / Advantages: Applications: Package: GBFP ● Low forward voltage drop ● Planar passivated chips ● Easy to mount with one screw ● Space and weight savings ● Supplies for DC power equipment ● Input rectifiers for PWM inverter ● Battery DC power supplies ● Field supply for DC motors ● Isolation Voltage: 2500 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Soldering pins for PCB mounting ● Base plate: Plastic overmolded tab ● Reduced weight IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130527b GBO25-16NO1 Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C max. 1700 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1600 V IR reverse current VF VR = 1600 V TVJ = 25°C 40 µA TVJ = 150°C 1.5 mA TVJ = 25°C 1.06 V 1.17 V 0.92 V 10 A IF = 20 A IF = 10 A IF = 20 A TVJ = 150°C TC = 105°C I DAV bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 1.09 V T VJ = 175 °C 25 A TVJ = 175 °C 0.74 V d = 0.5 for power loss calculation only Ptot typ. VR = 1600 V IF = forward voltage drop min. 16.3 mΩ 4.3 K/W K/W 0.50 TC = 25°C 35 W t = 10 ms; (50 Hz), sine TVJ = 45°C 370 A t = 8,3 ms; (60 Hz), sine VR = 0 V 400 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 315 A t = 8,3 ms; (60 Hz), sine VR = 0 V 340 A t = 10 ms; (50 Hz), sine TVJ = 45°C 685 A²s t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 665 A²s TVJ = 150 °C 495 A²s 480 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C Data according to IEC 60747and per semiconductor unless otherwise specified 10 pF 20130527b GBO25-16NO1 Package Ratings GBFP Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 70 Unit A -55 150 °C -40 175 °C Weight 7 MD mounting torque FC mounting force with clip d Spp/App d Spb/Apb VISOL creepage distance on surface | striking distance through air t = 1 minute RthJA 0.5 0.8 20 120 Nm N terminal to terminal 4.9 mm terminal to backside 2.5 mm 2500 V t = 1 second isolation voltage g 50/60 Hz, RMS; IISOL ≤ 1 mA 2080 V 50 thermal resistance junction to ambient K/W GBO 25-xxNO1 XXXX Ordering Standard Date Code Part Number GBO25-16NO1 Equivalent Circuits for Simulation I V0 R0 Marking on Product GBO25-16NO1 * on die level Delivery Mode Tube Code No. 500240 T VJ = 175 °C Rectifier V 0 max threshold voltage 0.74 V R 0 max slope resistance * 13.7 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Quantity 16 Data according to IEC 60747and per semiconductor unless otherwise specified 20130527b GBO25-16NO1 Outlines GBFP DIM. A B C D E F G H I J K L M N O P Q R (Ø) G MIN. MAX. 29.7 30.3 19.7 20.3 17.0 18.0 4.7 4.9 10.8 11.2 2.3 2.7 3.1 3.4 3.4 3.8 4.4 4.8 2.5 2.9 0.6 0.8 2.0 2.4 0.9 1.1 9.8 10.2 7.3 7.7 3.8 4.2 (3.0) x 45° 3.1 3.4 All Dimensions in millimeter - IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved ~ ~ + Data according to IEC 60747and per semiconductor unless otherwise specified 20130527b GBO25-16NO1 Rectifier 300 60 800 50 Hz 0.8 x V RRM VR = 0 V 600 250 40 TVJ = 45°C IFSM IF [A] I2t [A] 2 [A s] 200 20 0 0.4 200 TVJ = 25°C 0.8 1.2 150 10-3 1.6 0 10-2 10-1 100 t [s] Fig. 1 Forward current vs. voltage drop per diode Fig. 2 Surge overload current vs. time per diode 12 10 2 Fig. 3 I t vs. time per diode 40 RthJA: DC = 1 0.5 0.4 0.33 0.17 0.08 16 1 t [ms] VF [V] 20 [W] TVJ = 150°C TVJ = 150°C TVJ = 125°C 150°C Ptot TVJ = 45°C 400 DC = 0.6 KW 1 0.8 KW 1 KW 2 KW 4 KW 8 KW 30 0.5 0.4 0.33 IF(AV)M 0.17 20 0.08 [A] 8 10 4 0 0 0 4 8 12 16 0 25 50 IF(AV)M [A] 75 100 125 150 0 175 25 50 75 100 125 150 175 TC [°C] TA [°C] Fig. 4 Power dissipation vs. forward current and ambient temperature per diode Fig. 5 Max. forward current vs. case temperature per diode 5 4 ZthJC 3 Constants for ZthJC calculation: [K/W] i Rth (K/W) ti (s) 1 0.302 0.002 2 1.252 0.032 3 1.582 0.227 4 1.164 0.820 2 1 0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case vs. time per diode IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130527b