DSEP15-06A HiPerFRED VRRM = 600 V I FAV = 15 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP15-06A Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20120318a DSEP15-06A Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C max. 600 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25°C 600 V IR reverse current, drain current VR = 600 V TVJ = 25°C 100 µA VR = 600 V TVJ = 150°C 0.5 mA TVJ = 25°C 2.04 V 2.25 V 1.35 V VF IF = forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. 15 A IF = 30 A IF = 15 A IF = 30 A typ. TVJ = 150°C TC = 140°C rectangular 1.59 V T VJ = 175 °C 15 A TVJ = 175 °C 0.99 V d = 0.5 for power loss calculation only 15 mΩ 1.6 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C 12 pF I RM max. reverse recovery current TVJ = 25 °C 5 A TVJ = 100°C 7 A t rr reverse recovery time -di F /dt = 200 A/µs TVJ = 25 °C 35 ns non-repetitive avalanche energy I AS = TVJ = 100°C TVJ = 25 °C 95 EAS I AR repetitive avalanche current VA = 1.5·VR typ.: f = 10 kHz IF = IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved K/W 0.50 TC = 25°C 15 A; VR = 300 V 1 A L = 180 µH Data according to IEC 60747and per semiconductor unless otherwise specified 95 110 W A 0.1 ns mJ 0.1 A 20120318a DSEP15-06A Package Ratings TO-220 Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 35 Unit A -55 150 °C -55 175 °C Weight 2 MD mounting torque FC mounting force with clip g 0.4 0.6 Nm 20 60 N Product Marking abcdef Part Number Logo Date Code Lot # YYWW Z XXXXXX Assembly Line Ordering Standard Part Number DSEP15-06A Similar Part DSEP15-06B Equivalent Circuits for Simulation I V0 R0 Package TO-220AC (2) * on die level Delivery Mode Tube Quantity 50 Code No. 473529 Voltage class 600 T VJ = 175°C Fast Diode V 0 max threshold voltage 0.99 R 0 max slope resistance * 12 IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved Marking on Product DSEP15-06A V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20120318a DSEP15-06A Outlines TO-220 A A1 ØP H1 Q E D 4 3 L1 1 L 2x b2 2x b C e Millimeter Min. Max. Inches Min. Max. A A1 A2 4.32 1.14 2.29 4.82 1.39 2.79 0.170 0.045 0.090 0.190 0.055 0.110 b b2 0.64 1.15 1.01 1.65 0.025 0.045 0.040 0.065 C D 0.35 14.73 0.56 16.00 0.014 0.580 0.022 0.630 E e H1 9.91 5.08 5.85 10.66 BSC 6.85 0.390 0.200 0.230 0.420 BSC 0.270 L L1 12.70 2.79 13.97 5.84 0.500 0.110 0.550 0.230 ØP Q 3.54 2.54 4.08 3.18 0.139 0.100 0.161 0.125 A2 3 IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved Dim. 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20120318a DSEP15-06A Fast Diode 40 2000 40 TVJ = 100°C VR = 300 V TVJ = 150°C 100°C 25°C 30 TVJ = 100°C VR = 300 V 1500 IF 30 Qr 20 IF = 30A 15 A 7.5 A 1000 [A] [μC] 10 20 [A] 500 0 0 1 10 0 100 2 0 1000 0 400 600 800 1000 -diF /dt [A/μs] Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt Fig. 3 Typ. peak reverse current IRM versus -diF/dt 120 2.0 200 -diF /dt [A/μs] VF [V] Fig. 1 Forward current IF versus VF IF = 30A 15 A 7.5 A IRM 20 TVJ = 100°C VR = 300 V 1.6 TVJ = 100°C IF = 15 A V 110 1.5 15 trr Kf 1.0 100 1.2 trr VFR IF = 30A 15 A 7.5 A 10 0.8 [V] [ns] 90 [μs] IRM 0.5 5 0.0 VFR 70 0 40 0.4 80 Qr 80 120 160 0 0 TVJ [°C] 200 400 600 800 1000 0 -diF /dt [A/μs] 200 400 600 800 0.0 1000 -diF /dt [A/μs] Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ trr 10 Constants for ZthJC calculation: 1 ZthJC i Rthi (K/W) ti (s) 1 0.908 0.0052 0.1 2 0.350 0.0003 [K/W] 3 0.342 0.017 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20120318a