DPG 60B600LB HiPerFRED2 VRRM = 600 V IDAV = 60 A trr = 40 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery 1~ Rectifier Bridge Part number DPG60B600LB 9 8 7 1 3 2 e 4 6 5 8 = n/c 6 9 7 1 2 3 iv 5 E72873 a t 4 Backside: isolated Applications: Features / Advantages: t e n t •Planar passivated chips •Rectifiers in switch mode power supplies (SMPS) •Very low leakage current •Very short recovery time •Improved thermal behaviour •Very low Irm-values •Very soft recovery behaviour •Avalanche voltage rated for reliable operation •Soft reverse recovery for low EMI/RFI •Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Package: SMPD •Isolation Voltage: 3000 V~ (t = 1s) •Industry convenient outline •RoHS compliant •Epoxy meets UL 94V-0 •Soldering pins for PCB mounting •Backside: DCB ceramic •Reduced weight •Advanced power cycling IXYS reserves the right to change limits, test conditions and dimensions. © 2013 IXYS All rights reserved Data according ot IEC 60747 and per semiconductor unless otherwise specified 20131010 1-5 DPG 60B600LB Fast Diode Ratings Symbol Definitions Conditions VRSM max. non-repetitive rev. blocking voltage VRRM max. repetitive reverse blocking voltage IR reverse current, drain current VF forward voltage drop min. typ. max. TVJ = 25°C 600 V TVJ = 25°C 600 V VR = 600 V TVJ = 25°C TVJ = 150°C 250 2 µA mA IF = 30 A IF = 60 A TVJ = 25°C 2.51 3.19 V V IF = 30 A IF = 60 A TVJ = 150°C 1.59 2.21 V V ID25 ID80 diode forward DC current TC = 25°C TC = 80°C TVJ = 175°C TVJ = 175°C 77 58 A A IDAV bridge output current rectangular; d = 0.5; TC = 125°C TVJ = 175°C 60 A VF0 rF threshold voltage slope resistance for power loss calculation only TVJ = 175°C 0.85 17 V mW RthJC thermal resistance junction to case 101 K/W RthJH thermal resistance case to heatsink with thermal transfer paste (IXYS test setup) Ptot total power dissipation TC = IFSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 300 V; f = 1 MHz TVJ = 25°C 30 pF TVJ = 25°C TVJ = 125°C 5.5 12 A A TVJ = 25°C TVJ = 125°C 40 85 ns ns max. reverse recovery current trr reverse recovery time IF = 30 A; VR = 300 V -diF /dt = 400 A/µs K/W 135 250 W A t e n t a t iv IRM 25°C e CJ 0.40 IXYS reserves the right to change limits, test conditions and dimensions. © 2013 IXYS All rights reserved Data according ot IEC 60747 and per semiconductor unless otherwise specified 20131010 2-5 DPG 60B600LB Package SMPD Ratings Symbol Definitions Conditions IRMS RMS current wide pin standard pin Tstg Top TVJ storage temperature opertation temperature virtual junction temperature min. -55 -55 -55 Weight max. 100 60 A A 125 150 175 °C °C °C 8.5 FC mounting force with clip d Spp/App d Spb/Apb creepage distance on surface / striking distance through air terminal to terminal terminal to backside VISOL isolation voltage t = 1 second t = 1 minute 40 mm 4.0 mm 3000 2500 V V ~ ~ Part number e D = Diode P = HiPerFRED G = extreme fast 60 = Current Rating [A] B = 1~ Rectifier Bridge 600 = Reverse Voltage [V] LB = SMPD-B XXXXXXXXXX yywwA Data Matrix Code Pin 1 identifier a t Part # Date Code Assembly line Lot # Split Lot Individual # N iv Assembly line 130 1.6 50/60 Hz; RMS; IISOL < 1 mA Backside DCB Part number Date code g UL Logo ~ Digits 1 to 19: 20 to 23: 24 to 25: 26 to 31: 32: 33 to 36: typ. Ordering Part Name Marking on Product DPG60B600LB DPG60B600LB Blister 45 512859 DPG60B600LB-TRR DPG60B600LB Tape&Reel 200 512852 n t Standard Delivering Mode Base Qty Ordering Code Equivalent Circuits for Simulation V0 R0 e I *on die level threshold voltage 0.85 R0 max slope resistance * 17 V mW t V0 max TVJ = 175°C IXYS reserves the right to change limits, test conditions and dimensions. © 2013 IXYS All rights reserved Data according ot IEC 60747 and per semiconductor unless otherwise specified 20131010 3-5 DPG 60B600LB Outlines SMPD A(8:1) 5,5 0,1 2) (6x) 1 0,05 0 + 0,15 2° 0,1 18 0,1 seating plane (3x) 2 0,05 9 0,1 8 4 0,05 0,55 0,1 9 iv 32,7 0,5 23 0,2 e 7 2) 4,85 0,2 0,5 0,1 1) 2 0,2 25 0,2 3) 0,05 3 2 1 A t 6 5 4 Pin number Notes: 1) potrusion may add 0.2 mm max. on each side 2) additional max. 0.05 mm per side by punching misalignement or overlap of dam bar or bending compression 3) DCB area 10 to 50 µm convex; position of DCB area in relation to plastic rim: ±25 µm (measured 2 mm from Cu rim) 4) terminal plating: 0.2 - 1 µm Ni + 10 - 25 µm Sn (galv.) cutting edges may be partially free of plating a 2,75 0,1 5,5 0,1 13,5 0,1 t 16,25 0,1 n 19 0,1 5 6 9 7 1 2 3 t e 4 8 = n/c IXYS reserves the right to change limits, test conditions and dimensions. © 2013 IXYS All rights reserved Data according ot IEC 60747 and per semiconductor unless otherwise specified 20131010 4-5 DPG 60B600LB 600 100 VR = 300 V 500 80 TVJ = 150°C IF = 60 A IF = 15 A IF = 30 A Qr TVJ = 100°C IR M IF = 15 A 300 [A ] 40 IF = 30 A 18 IF = 60 A 400 I F 60 24 TVJ = 100°C 12 [A ] [μ C ] TVJ = 100°C 200 6 20 0 100 TVJ = 25°C 0 1 2 3 0 100 4 140 60 VR = 300 V iv IF = 15 A 80 [n s] Qr 40 120 160 0.25 200 400 600 800 40 0.20 30 0.15 t fr [μ s ] [V ] 20 tfr VFR 10 0 1000 0.10 0.05 0 200 400 600 800 0.00 1000 - d i F /d t [A /μ s ] Fig. 5 Typ. recovery time trr versus -diF /dt a Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt t 1 0.30 IF = 30 A -d i F /d t [A /μ s ] T V J [°C ] Fig. 4 Dynamic parameters Qr, IRM versus TVJ 2 0 t 80 1000 V FR IF = 30 A t rr 60 800 e IF = 60 A 100 IRM 600 TVJ = 100°C 50 1.5 K f 1.0 400 Fig. 3 Typ. peak reverse current IRM versus -diF /dt TVJ = 100°C 120 40 200 -d i F /d t [A /μ s ] Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt 2.0 0 0 -d i F /d t [A /μ s ] Fig. 1 Forward current IF versus VF 0.5 0 1000 V F [V ] 0.0 VR = 300 V n Z th J0.1 C [K /W ] Constants for ZthJC calculation: e 0.01 t 0.001 0.00001 0.0001 0.001 0.01 0.1 i Rthi (K/W) ti (s) 1 0.465 0.0052 2 0.179 0.0003 3 0.256 0.0396 1 t [s ] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, test conditions and dimensions. © 2013 IXYS All rights reserved Data according ot IEC 60747 and per semiconductor unless otherwise specified 20131010 5-5