DNA30E2200FE High Voltage Standard Rectifier VRRM = 2200 V I FAV = 30 A VF = 1.22 V Single Diode Part number DNA30E2200FE Backside: isolated 5 1 Features / Advantages: Applications: Package: i4-Pac ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour ● Diode for main rectification ● For single and three phase bridge configurations ● Isolation Voltage: 3000 V~ ● Industry convenient outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Soldering pins for PCB mounting ● Backside: DCB ceramic ● Reduced weight ● Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130123c DNA30E2200FE Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C max. 2300 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25°C 2200 V IR reverse current VF I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case VR = 2200 V TVJ = 25°C 40 µA TVJ = 150°C 1.5 mA TVJ = 25°C 1.25 V 1.50 V 1.22 V 30 A IF = 60 A IF = 30 A IF = 60 A TVJ = 150 °C TC = 110°C rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 1.59 V T VJ = 175 °C 30 A TVJ = 175 °C 0.83 V d = 0.5 for power loss calculation only Ptot typ. VR = 2200 V IF = forward voltage drop min. 12.8 mΩ 1.35 K/W K/W 0.20 TC = 25°C 110 W t = 10 ms; (50 Hz), sine TVJ = 45°C 370 A t = 8,3 ms; (60 Hz), sine VR = 0 V 400 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 315 A t = 8,3 ms; (60 Hz), sine VR = 0 V 340 A t = 10 ms; (50 Hz), sine TVJ = 45°C 685 A²s t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 665 A²s TVJ = 150 °C 495 A²s 480 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 700 V; f = 1 MHz TVJ = 25°C Data according to IEC 60747and per semiconductor unless otherwise specified 7 pF 20130123c DNA30E2200FE Package Ratings i4-Pac Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 70 Unit A -55 175 °C -55 150 °C 150 °C Weight FC 9 20 mounting force with clip d Spp/App VISOL t = 1 minute Product Marking UL listed Logo IXYS mm terminal to backside 5.1 mm 3000 V 2500 V 50/60 Hz, RMS; IISOL ≤ 1 mA Part number D N A 30 E 2200 FE ® ISOPLUS® = = = = = = = Diode High Voltage Standard Rectifier (>= 2000V) Current Rating [A] Single Diode Reverse Voltage [V] i4-Pac (2HV) XXXXXXXXX Part No. Assembly Line N 13.8 t = 1 second isolation voltage 120 terminal to terminal creepage distance on surface | striking distance through air d Spb/Apb g Zyyww abcd Date Code Assembly Code Ordering Standard Part Number DNA30E2200FE Similar Part DNA30E2200PA DNA30E2200PZ DNA30EM2200PZ DNA30E2200IY Equivalent Circuits for Simulation I V0 R0 Marking on Product DNA30E2200FE Package TO-220AC TO-263AB (D2Pak) (2HV) TO-263AB (D2Pak) (2HV) TO-262 (2HV) (I2PAK) * on die level Delivery Mode Tube Code No. 508861 Voltage class 2200 2200 2200 2200 T VJ = 175 °C Rectifier V 0 max threshold voltage 0.83 V R 0 max slope resistance * 10.2 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Quantity 25 Data according to IEC 60747and per semiconductor unless otherwise specified 20130123c DNA30E2200FE A2 E1 D1 R L1 D3 D L Q E A D2 Outlines i4-Pac 1 2x b2 2x b c 5 A1 e W 5 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Dim. A A1 A2 b b2 c D D1 D2 D3 E E1 e L L1 Q R W Millimeter min max 4.83 5.21 2.59 3.00 1.17 2.16 1.14 1.40 1.47 1.73 0.51 0.74 20.80 21.34 14.99 15.75 1.65 2.03 20.30 20.70 19.56 20.29 16.76 17.53 15.24 BSC 19.81 21.34 2.11 2.59 5.33 6.20 4.57 2.54 0.10 - Inches min max 0.190 0.205 0.102 0.118 0.046 0.085 0.045 0.055 0.058 0.068 0.020 0.029 0.819 0.840 0.590 0.620 0.065 0.080 0.799 0.815 0.770 0.799 0.660 0.690 0.600 BSC 0.780 0.840 0.083 0.102 0.210 0.244 0.100 0.180 0.004 - Die konvexe Form des Substrates ist typ. < 0.05 mm über der Kunststoffoberfläche der Bauteilunterseite The convexbow of substrate is typ. < 0.05 mm over plastic surface level ofdevice bottom side 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20130123c DNA30E2200FE Rectifier 103 60 300 40 VR = 0 V 50 Hz, 80% VRRM 250 TVJ = 45°C TVJ = 45°C IF 2 It IFSM 200 [A] 20 TVJ = 150°C TVJ = 125°C TVJ = 25°C 0 0.5 1.0 2 TVJ = 150°C [A] TVJ = 150°C [A s] 150 102 100 0.001 1.5 VF [V] 0.01 0.1 1 1 t [s] Fig. 2 Surge overload current Fig. 1 Forward current versus voltage drop per diode 2 3 4 5 6 7 8 910 t [ms] 2 Fig. 3 I t versus time per diode 80 50 RthKA = dc = 1 0.5 0.4 0.33 0.17 0.08 40 30 0.6 K/W 0.8 K/W 1.0 K/W 2.0 K/W 4.0 K/W 8.0 K/W dc = 1 0.5 0.4 0.33 0.17 0.08 60 IF(AV)M 40 Ptot [A] 20 [W] 20 10 0 0 0 10 20 30 0 25 50 IF(AV)M [A] 75 100 125 150 175 200 0 50 100 150 200 TC [°C] Tamb [°C] Fig. 4 Power dissipation versus direct output current & ambient temperature Fig. 5 Max. forward current versus case temperature 1.6 Constants for ZthJC calculation: 1.2 i ZthJC 0.8 [K/W] 0.4 Rthi (K/W) ti (s) 1 0.03 0.0003 2 0.072 0.0065 3 0.122 0.083 4 0.736 0.152 5 0.39 0.4 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130123c