Emission Microscope R -1000 Reveals “Invisible” Defects and Failures Detects very faint emissions caused by anomalies quickly and accurately to determine failure locations. The PHEMOS series of emission microscope is a group of semiconductor failure analysis tools that detect faint emissions caused by semiconductor device anomalies to specify the failure location. They can be used on anything from memory and logic devices to power and flat panel devices. They have a wide range of applications, from failure analysis in the design stage to defective product analysis in the field. 2 ESD damage localization Standby current failure FET rush current caused by a short or open circuit Metal wiring defect analysis using the IR-OBIRCH method Pressure resistance defects Latch-up analysis in CMOS, etc. Failure analysis of LOC packages and below-multilayer metal wiring Failure analysis on flat panel displays Emission Microscope -1000 The PHEMOS-1000 is a standard model high-resolution emission microscope that includes an IR confocal laser scan microscope. From a socket board to a 300 mm double-sided wafer prober, the PHEMOS-1000 flexibly corresponds to device environment and set-up. It can also accommodate the highly sensitive NIR camera and the high-resolution NanoLens as options. There are various options including IR-OBIRCH analysis, connection to an LSI tester and the CAD navigation function, all of which give the PHEMOS-1000 the ability to handle a wide range of measuring needs. Features Detection targets IR confocal laser scan microscope NanoLens for high-resolution, high-sensitivity observation (option) Applicable devices IR-OBIRCH analysis function (option) Dynamic analysis function by laser radiation (option) EO probing unit C12323 (option) High-sensitivity NIR camera for low-voltage samples (option) Compatible probers Digital lock-in kit to enhance the IR-OBIRCH detectability (option) 300 mm double-sided semi-auto prober installable (option) Device emission (emission detection function) Current alteration (IR-OBIRCH function) 200 mm/300 mm wafer Diced chips Cut wafers, packaged devices (Depends on the prober and sample fixtures) Double-sided semi-auto prober for use with 200 mm/300* mm wafers Double-sided manual prober for use with 200 mm/300* mm wafers Semi-auto prober for use with 200 mm/300* mm wafers (frontside observation) Manual prober for use with 200 mm/300* mm wafers (frontside observation) *Upon request Basic display functions Superimposed display/contrast enhancement function Pattern images Superimposed images Emission images The PHEMOS-1000 superimposes the emission image on a highresolution pattern image to localize defect points quickly. The contrast enhancement function makes an image clearer and more detailed. Display function • Annotations Comments, arrows, and other indicators can be displayed on an image at any location desired. • Scale display The scale width can be displayed on the image using segments. • Grid display Vertical and horizontal grid lines can be displayed on the image. • Thumbnail display Images can be stored and recalled as thumbnails, and image information such as stage coordinates can be displayed. • Split screen display Pattern images, emission images, superimposed images, and reference images can be displayed in a 4-window screen at once. 3 Emission Microscope -1000 C-CCD camera C4880-59 IR confocal laser scan microscope The cooled CCD camera is a basic emission detector available for the PHEMOS series. High resolution and low readout noise provide high contrast and clear images. Although its main strength is for frontside detection, its sensitivity extends into the 1100 nm nearinfrared range, making it useful for backside observations as well. SI-CCD camera C11231-01 The SI-CCD camera detects low-light emissions from minute patterns in LSI devices with both high sensitivity and high position accuracy, which slashes detection time by 90% compared to ordinary cooled CCD cameras. Real time readout during emission image acquisition enables monitoring the emission state during the integration time. The IR confocal laser scan microscope obtains clear, high-contrast pattern images by scanning the backside of a chip with the infrared laser. Within 1 second a pattern image can be acquired. By the flexible scan in 4 directions, it is possible to scan a device from different directions without rotating it. Scanning in parallel with a metal line makes OBIRCH image clearer. The function is also useful in OBIRCH analysis using a digital lock-in and dynamic analysis by stimulation by laser stimulation. < Standard function > Dual scan: Obtain a pattern image and an IR-OBIRCH image simultaneously Flexible scan: Normal scan (1024 × 1024, 512 × 512), Zoom, Slit scan, Area scan, Line scan, Point scan, Scan direction changeable (0°,45°,90°,180°,270°) Reflected images and OBIRCH images are obtained, and then both images are superimposed. InGaAs camera C8250 series When device design becomes smaller and driving voltage is lowered, a detector that has high sensitivity in the near-infrared range is indispensable. The C8250 series cameras are highly sensitive in the near-infrared range from 900 nm to 1550 nm, making them suitable for low-voltage drive IC chips and backside faint emission analysis. Features Scan speed (second/image) 512 × 512 1 2 4 8 1024 × 1024 2 4 8 16 • Laser* 1.3 μm Laser diode Output: 100 mW 1.3 μm High power laser (option) Output: 400 mW or more 1.1 μm Laser diode (option) Output: 200 mW (CW), 800 mW (pulse) * For 1.3 μm laser, one of two laser can be integrated. High-sensitivity (high quantum efficiency) in the infrared region Powerful tool for low-voltage drive IC chips and backside observation through silicon High resolution and highly sensitive analysis possible when combined with a laser confocal microscope Peltier cooling systems are maintenance free (without LN2). The hermetic vacuum shield camera; C8250-27 is maintenance free from periodic re-evacuation. • Optical stage travel range* X ±20 mm Y ±20 mm Z 75 mm * These values may become smaller due to interference with the prober used, the sample stage and the NanoLens option. Laser marker C7638 A comparative chart of wavelength sensitivity ranges 100 Hot carrier emission region Quantum efficiency (%) 90 The laser marker uses a pulse laser, and its spot size is φ5 μm under a 100× lens. 80 70 Failure location information can be easily transfered to another analytical instrument by marking the area of an identified failure location, or by marking around it. InGaAs 60 50 C-CCD Lens magnification 40 SI-CCD 30 Up to 5 lenses selectable for a turret 20 10 0 400 Lens 600 800 1000 1200 1400 1600 Wavelength (nm) NIR camera lineup C8250-27 C8250-31 C8250-21 Model Liquid nitrogen cooling Peltier cooling Liquid nitrogen cooling Cooling type PHEMOS-1000 Corresponding product -70 ˚C -183 ˚C or less -120 ˚C or less Cooling temperature 900 nm to 1550 nm Spectral sensitivity 1000 (H) × 1000 (V) 640 (H) × 512 (V) Effective number of pixels 133 μm × 133 μm 128 μm × 102.4 μm Field of view 100× 16.7 mm × 16.7 mm 16.0 mm × 12.8 mm Maximum field of view 0.8× 12 bit A/D converter 4 Analysis N.A. 1800 0.8× : A7909-13 1× : A7649-01 2× : A8009 NIR 5× : A11315-01 NIR 20× : A11315-03 NIR 50× : A11315-04 NIR 50× (Backside): A8756-01 High NA 50× : A8018 NIR 100× : A11315-05 NIR-HR 50× : A11315-06 NIR 100× (Backside) : A8756-02 NIR-HR 100× : A11315-07 NIR-HR 100× (Backside): A11315-08 : Standard Emission 0.40 OBIRCH 0.03 OBIRCH/Emission 0.055 OBIRCH/Emission 0.14 OBIRCH/Emission 0.40 OBIRCH/Emission 0.42 OBIRCH/Emission 0.42 OBIRCH 0.76 OBIRCH/Emission 0.50 OBIRCH/Emission 0.65 OBIRCH/Emission 0.50 OBIRCH/Emission 0.70 OBIRCH/Emission 0.70 W.D. (mm) 24 20 34 37.5 20 17 17.3 12 12 10 12.3 10 6 Optional Optional Optional Optional Optional Optional Optional Optional Optional Emission Microscope -1000 IR -OBIRCH analysis A8755 IR-OBIRCH (Infrared Optical Beam Induced Resistance CHange) analysis detects current alteration caused by leakage current paths and contact area resistance failure in devices by irradiating an infrared laser. PRINCIPLE OF OBIRCH ANALYSIS Laser : = 1.3 μm Laser (frontside) Leakage Current Path I A1 or or Heated A1 I R/V)I2 ( Digital lock-in kit M10383 The M10383 digital lock-in kit is a new function added to the OBIRCH analysis, in order to boost detection sensitivity by sampling one pixel into multiple data using lock-in processing. The M10383 allows acquiring a sharp and clear image in a short acquisition time compared to the A9188-01 lock-in kit which uses an analog processing method. Analog lock-in (5 kHz, 72 s) Digital lock-in (5 kHz, 52 s) I V Si-sub. T, TCR Laser (backside) V= *Depends on defects and materials R×I I : Current before laser irradiation V : Applied voltage Defects in Metal Line I : Current change due to laser irradiation (when constant voltage is applied) V : Voltage change due to laser irradiation (when constant current is applied) OBIRCH signal R : Resistance increase with the temperature increase due to laser irradiation T : Temperature increase due to laser irradiation TCR : Temperature coefficient of resistance ● High-resolution, high-contrast reflection pattern images ● Backside observation capable (using a 1.3 μm wavelength laser) ● By using a 1.3um laser, OBIRCH signal detection is not disturbed by OBIC signal. Fixed voltage mode, fixed current mode, and high-sensitivity current mode (fixed current mode) are selectable via software. The A8755 also uses a new OBIRCH amp. It has 10× better detectability than before. Fixed voltage mode Fixed current mode High-sensitivity current mode Applied voltage range -10 V to +10 V -10 V to +10 V -25 mV to +25 V Max. current 100 mA 100 mA 100 μA Detectability 1 nA*1 1 μV*2 3 pA*1 Integrate noise cancellation function < by improving noise caused by external equipment > Current detection head Standard type*1 Possible to measure at 4 quadrant voltage/current New OBIRCH amp. can work for devices, which need to apply negative voltage/current. The new amp is also effective to detect reverse current flowed differently from design. Max. 250 V 3 kV Applicable current 6.3 A (Max. 10 A) 30 mA(90 VA) 10 nA*2 Detectability Due to high integration and increased performance of LSI, functional failure analysis under LSI tester connection becomes very important. Dynamic analysis by laser stimulation (DALS) is a new method to analyze device operation conditions by means of laser radiation. Stimulate a device with a 1.3 μm laser while operating it with test patterns by LSI tester. Then device operation status (pass/fail) changes due to heat generated by the laser. The pass/fail signal change is expressed as an image that indicates the point causing timing delay, marginal defect, etc. Analysis done by driving an LSI under conditions at the boundary * The Pass/Fail status changes as a reaction to the laser stimulation Source +25 V Positive voltage/Negative current High voltage type (optional) Applicable voltage Dynamic analysis by laser stimulation kit (DALS) A9771 with noise cancel Sink Analysis using the current detection head A current detection head can be used to measure devices that require higher voltage or higher current than the range of standard OBIRCH amp (10V/100 mA or 25V/100 μA). *1 The standard type head is included in M10383 Digital Lock-in kit. *2 Minimum detectable pulse signal input into an OBIRCH amp. Detectability can differ by device set-up environment. *1 Minimum detectable pulse signal input into the amplifier *2 Calculated value without noise cancel Comparing analog lock-in with digital lock-in (short scan period) Positive voltage/Positive current +10 V –100 mA –100 μA +100 μA +100 mA Image formation –10 V Negative voltage/Negative current Pass/Fail status Negative voltage/Positive current –25 V Source Sink Analysis possible range Pass/Fail map corresponding to laser scan LSI tester Failure location Status changes due to laser heat Change in status in reaction to the laser = failure location Concept of the analysis of a failed device by utilizing the "drive voltage – operating frequency" characteristics 5 Emission Microscope -1000 EO Probing Unit C12323 The EO Probing Unit is a tool to observe a transistor's status through the Si substrate using an incoherent light source. It is composed of the EOP (Electro Optical Probing) to measure operation voltage of a transistor rapidly and the EOFM (Electro Optical Frequency Mapping) to image active transistors at a specific frequency. With a NanoLens, high resolution and sensitivity can be obtained. Gate Source Drain Features ● High quality pattern image with no interference fringe ● No sample damage by incoherent light source ● Low power light source and high sensitive detector provides stable and accurate measurement. ● EOP waveform with high S/N ratio in 2 seconds ● Easy-to-use software identical to the PHEMOS interface ● EOFM phase image provides intuitive interpretation of signal propagation. ● Possible to get 2 different frequency data simultaneously. ● Retrofit on PHEMOS, uAMOS, iPHEMOS, THEMOS in the field is possible. Depletion layer Incoherent light source EOP Function This function acquires switching timing of a specific transistor rapidly by high speed sampling. As an extended analysis of emission and OBIRCH, the EOP function improves accuracy of failure point localization, enabling a much smoother followup physical analysis. Detector EOFM image Phase image EOP principle When the drain voltage of a FET varies by switching operation, the electric field distribution at a drain boundary also changes. This induces a change of refractive index due to the electro-optical effect of each material. When irradiating a drain by a light beam through the Si substrate, the intensity of reflected light varies corresponding to the voltage level. The EOP is a newly developed method that can observe the reflected light which expresses the status of a transistor. EOP waveform EOFM Function This function measures transistors switching at a specific frequency and images them. The reflected light from a drain has the power spectrum distribution. The EOFM picks up the intensity of signal under certain frequency from the distribution and visualize it as an image. By operating transistors in a specific region under certain frequency, it is possible to observe if the circuits are correctly switching or not. Pattern image Amplitude image I/Q image Phase image (Lock-in) (Timing) Detector Light source Incoherent light source (Patent pending) Light source output Maximum 10 mW (Variable) Light source wavelength 1.3 μm Optical sensor Photodiode Bandwidth Analog band (10 kHz to 1 GHz) EOP Measurement function Signal processing High speed digitizer Digital sampling frequency 4 GHz EOFM Measurement function 6 Signal processing Spectrum analyzer (2 ch simultaneous output) Scan speed 0.2 seconds/line to 2 s/line CAD navigation system connections NanoLens (solid immersion lens) C9710 For backside observation, nearinfrared light is used to penetrate the Si layer. On the other hand, optical resolution gets worse at longer wavelengths. The NanoLens (a solid immersion lens) is a hemispherical lens that touches the LSI substrate and utilizes the index of refraction of silicon to increase the numerical aperture, which improves spatial resolution and convergence efficiency. By setting the NanoLens on a point to observe on the backside of a device, it is possible to perform analysis at a sub-micron level of spatial resolution in a short period of time with greatly improved accuracy. 3 types of SIL lens cap are available in order to correspond to Si thickness from 70um to 800um. Standard lens principles NanoLens principles Objective lens Objective lens Laser light collection Total reflection Back side Back side Si Small N.A. Si Pattern side Pattern side Large N.A. Sequence software This function enables automatic measurement of IR-OBIRCH observation by following the procedure set by a user. IR-OBIRCH images can be sequentially measured and saved by combining with a semi-automatic prober. Measurements under the condition with an LSI tester or an external power source are possible as well. Connecting to an LSI tester NanoLens Emissions When performing failure analysis of complicated LSI chips on a large scale, it is possible to connect through a network (TCP/IP) and CAD navigation software. This helps the subsequent investigation of problem locations. By superimposing an area where a problem has been detected, or an image, over the layout diagram, it is possible to identify defective points. Improvement As devices become more complicated, there is increased demand for analysis under an LSI tester connection to find a failure occurring at a specific point while a device is functioning. It is possible to connect an LSI tester with the PHEMOS by a short cable and using a probe card adapter specifically designed for the analysis under the PHEMOS optics. Laser spot Laser spot ▲ OBIRCH observation using a 256-pin probe card adapter Connection with the FA-Navigation failure analysis support system Coaxial cable Power supply/ GND cable Connector board Combining detection signals from PHEMOS and design data, and automatically extracting suspicious signal lines contributes to making the work of narrowing down the malfunction locations more effective and to reducing the time needed to clarify the route cause. Analysis is easily possible using GDS ll or LEF/DEF at both laboratory and office. (Patent pending) PHEMOS Connector panel Adapter board LSI tester head PHEMOS CAD Data Failure information physical analysis information Integrated Information Wiring information logic information Utility Line voltage Failure localization supported by FA-Navigation Pattern images / Design information AC 220 V (50 Hz/60 Hz) Power consumption 3000 VA Vacuum Approx. 80 kPa or more Compressed air 0.5 MPa to 0.7 MPa Acquires a superimposed the signal image and the pattern image provided by failure analysis system. Design information overlay/Automatical signal region setting Design data (CAD data) can also be superimposed on a failure analysis image. Allows signal region parameter setting. Automatic NET extraction Automatically extracts the NET passing through signal regions. Ranks the NETs in order of most number of times they pass through the signal region. Dimensions/Weight Dimensions/Weight PHEMOS main unit 1360 mm (W) × 1410 mm (D) × 2120 mm (H), Approx. 900 kg PHEMOS control rack 880 mm (W) × 700 mm (D) × 1542 mm (H), Approx. 255 kg PC desk 1000 mm (W) × 800 mm (D) × 700 mm (H), Approx. 45 kg *Weight of PHEMOS main unit includes a prober or equivalent item. NET highlight display This function highlights a specified NET from among the extracted NETs. Analyzing this NET assists in identifying the failure location in a short time. 7 LASER SAFETY Hamamatsu Photonics classifies laser diodes, and provides appropriate safety measures and labels according to the classification as required for manufacturers according to IEC 60825-1. When using this product, follow all safety measures according to the IEC. CLASS 1 LASER PRODUCT Description Label (Sample) Caution Label ★ PHEMOS are registered trademark of Hamamatsu Photonics K.K. (France, Germany, Japan, Korea, Taiwan, U.K., U.S.A.) ★ Product and software package names noted in this documentation are trademarks or registered trademarks of their respective manufacturers. • Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications and external appearance are subject to change without notice. • Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult your local sales representative. © 2014 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Systems Division 812 Joko-cho, Higashi-ku, Hamamatsu City, 431-3196, Japan, Telephone: (81)53-431-0124, Fax: (81)53-435-1574, E-mail: [email protected] U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J 08807, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected] Germany: Hamamatsu Photonics Deutschland GmbH.: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-265-8 E-mail: [email protected] France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: [email protected] United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court,10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, UK, Telephone: (44)1707-294888, Fax: (44)1707-325777 E-mail: [email protected] North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: [email protected] Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6 20020 Arese (Milano), Italy, Telephone: (39)02-93581733, Fax: (39)02-93581741 E-mail: [email protected] China: Hamamatsu Photonics (China) Co., Ltd.: B1201 Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86)10-6586-6006, Fax: (86)10-6586-2866 E-mail: [email protected] Cat. No. SSMS0003E15 NOV/2014 HPK Created in Japan