CCD area image sensors S7170-0909 S7171-0909-01 512 × 512 pixels, back-thinned FFT-CCD HAMAMATSU developed MPP (multi-pinned phase) mode back-thinned FFT-CCDs S7170-0909, S7171-0909-01 speci¿cally designed for low-light-level detection in scienti¿c applications. The S7170-0909, S7171-0909-01 have sensitivity from the UV to near-IR as well as having low dark current and wide dynamic range. Stability of the spectral response curve is also achieved for high precision measurements. Either one-stage or two-stage thermoelectric cooler is built into the package (S7171-0909-01, S7172-0909). At room temperature operation, the device can be cooled down to -10 °C by one-stage cooler and -30 °C by two-stage cooler, respectively. In addition since both the CCD chip and the thermoelectric cooler are hermetically sealed, no dry air is required, thus allowing easy handling. Features Applications 512 × 512 pixel format Scienti¿c measuring instrument Greater than 90% quantum efficiency at peak sensitivity wavelength Wide spectrum range Semiconductor inspection UV imaging Bio-photon observation Low readout noise Wide dynamic range MPP operation Non-cooled type: S7170-0909 One-stage TE-cooled type: S7171-0909-01 Selection guide Type no. Cooling Number of total pixels Number of effective pixels Image size [mm (H) × mm (V)] S7170-0909 S7171-0909-01 Non-cooled One-stage TE-cooled 532 × 520 512 × 512 12.288 × 12.288 Suitable multichannel detector head C7180 C7181 Note: Two-stage TE-cooled type (S7172-0909) is also available. Structure Parameter Pixel size Vertical clock phase Horizontal clock phase Output circuit Package Window S7170-0909 S7171-0909-01 24 (H) × 24 (V) m 2 phases 2 phases One-stage MOSFET source follower 24-pin ceramic DIP (refer to dimensional outlines) Sapphire*1 AR-coated sapphire *1: Window-less type (ex. S7170-0909N) is available upon request. (Temporary window is ¿xed by tape to protect the CCD chip and wire bonding.) www.hamamatsu.com 1 CCD area image sensors S7170-0909, S7171-0909-01 Absolute maximum ratings (Ta=25 °C unless otherwise noted) Parameter Operating temperature*2 Storage temperature Output transistor drain voltage Reset drain voltage Vertical input source voltage Horizontal input source voltage Vertical input gate voltage Horizontal input gate voltage Summing gate voltage Output gate voltage Reset gate voltage Transfer gate voltage Vertical shift register clock voltage Horizontal shift register clock voltage Symbol Topr Tstg VOD VRD VISV VISH VIG1V, VIG2V VIG1H, VIG2H VSG VOG VRG VTG VP1V, VP2V VP1H, VP2H Min. -50 -50 -0.5 -0.5 -0.5 -0.5 -10 -10 -10 -10 -10 -10 -10 -10 Typ. - Max. +50 +70 +25 +18 +18 +18 +15 +15 +15 +15 +15 +15 +15 +15 Unit °C °C V V V V V V V V V V V V Symbo VOD VRD VOG VSS VISV VISH VIG1V, VIG2V VIG1H, VIG2H VP1VH, VP2VH VP1VL, VP2VL VP1HH, VP2HH VP1HL, VP2HL VSGH VSGL VRGH VRGL VTGH VTGL RL Min. 18 11.5 1 -9 -9 4 -9 4 -9 4 -9 4 -9 4 -9 20 Typ. 20 12 3 0 VRD VRD -8 -8 6 -8 6 -8 6 -8 6 -8 6 -8 22 Max. 22 12.5 5 8 -7 8 -7 8 -7 8 -7 8 -7 24 Unit V V V V V V V V Symbol fc CP1V, CP2V CP1H, CP2H CSG CRG CTG CTE Vout Zo P Min. 0.99995 14 - Typ. 6400 120 30 30 70 0.99999 16 3 13 Max. 1 18 4 14 Unit MHz pF pF pF pF pF V k: mW *2: Package temperature (S7170-0909), chip temperature (S7171-0909-01) Operating conditions (MPP mode, Ta=25 °C) Parameter Output transistor drain voltage Reset drain voltage Output gate voltage Substrate voltage Vertical input source voltage Horizontal input source voltage Test point Vertical input gate voltage Horizontal input gate voltage High Vertical shift register clock voltage Low Horizontal shift register High clock voltage Low High Summing gate voltage Low High Reset gate voltage Low High Transfer gate voltage Low External load resistance V V V V V k: Electrical characteristics (Ta=25 °C) Parameter Signal output frequency Vertical shift register capacitance Horizontal shift register capacitance Summing gate capacitance Reset gate capacitance Transfer gate capacitance Charge transfer ef¿ciency*3 DC output level Output impedance Power consumption*4 *3: Charge transfer ef¿ciency per pixel, measured at half of the full well capacity *4: Power consumption of the on-chip ampli¿er plus load resistance 2 CCD area image sensors S7170-0909, S7171-0909-01 Electrical and optical characteristics (Ta=25 °C unless otherwise noted) Parameter Saturation output voltage Symbol Vsat Vertical Horizontal*5 Full well capacity CCD node sensitivity Dark current*6 (MPP mode) Readout noise*7 25 °C 0 °C Dynamic range*8 Line binning Area scanning Fw Sv DS Nr DR PRNU O non-uniformity*9 Photo response Spectral response range Point defect*10 Blemish Min. 240 300 1.8 37500 30000 - White spots Black spots - Cluster defect*11 Column defect*12 Typ. Fw × Sv 320 600 2.2 100 10 8 75000 40000 ±3 200 to 1100 - Max. 1000 100 16 ±10 0 10 3 0 Unit V keV/ee-/pixel/s e- rms % nm - *5: The linearity is ±1.5%. *6: Dark current nearly doubles for every 5 to 7 °C increase in temperature. *7: Measured with a HAMAMATSU C4880 digital CCD camera with a CDS circuit (sensor temperature: -40 °C, operating frequency: 150 kHz) *8: Dynamic range = Full well capacity / Readout noise *9: Measured at half of the full well capacity, using LED light (peak emission wavelength: 560 nm) Photo Response Non-Uniformity (PRNU) = Fixed pattern noise (peak to peak) Signal × 100 [%] *10: White spots Pixels whose dark current is higher than 1 ke- after one-second integration at 0 °C Black spots Pixels whose sensitivity is lower than one-half of the average pixel output (measured with uniform light producing one-half of the saturation charge) *11: 2 to 9 contiguous defective pixels *12: 10 or more contiguous defective pixels Spectral response (without window)*13 (Typ. Ta=25 °C) 100 90 Back-thinned CCD Quantum efficiency (%) 80 70 60 50 40 30 20 Front-illuminated CCD (UV coated) Front-illuminated CCD 10 0 200 400 600 800 1000 1200 Wavelength (nm) KMPDB0058EB *13: Spectral response is decreased according to the spectral transmittance characteristic of window material. 3 CCD area image sensors S7170-0909, S7171-0909-01 Spectral transmittance characteristic of window material (Typ. Ta=25 °C) 100 90 Transmittance (%) 80 AR-coated sapphire 70 Sapphire 60 50 40 30 20 10 0 100 200 300 400 500 600 700 800 900 1000 Wavelength (nm) KMPDB0102EB Dark current vs. temperature Window material S7171-0909-01 *14: Hermetic sealing Window material (Typ.) 1000 Sapphire*14 (option: windowless) AR-coated sapphire*14 (option: windowless) 100 Dark current (e-/pixel/s) Type no. S7170-0909 S7172-0909 (two-stage TEcooled type) 10 1 0.1 0.01 -50 -40 -30 -20 -10 0 10 20 30 Temperature (°C) KMPDB0256EA 4 CCD area image sensors S7170-0909, S7171-0909-01 Device structure (conceptual drawing of top view) Thinning 23 21 15 20 13 14 4-bevel 22 24 512 signal out 5 4 3 2 12345 H 1 4-bevel Thinning V 12 2 11 3 4 5 8 10 9 512 signal out 4 blank pixels 8-bevel V=512 H=512 4 blank pixels 4-bevel KMPDC0075EA 5 CCD area image sensors S7170-0909, S7171-0909-01 Timing chart Area scanning (large full well mode) Integration period (shutter has to be open) Readout period (shutter has to be closed) Tpwv 1 2 4..519 520←512 + 8 (bevel) 3 P1V P2V, TG P1H P2H, SG RG OS Tovr P2V, TG Enlarged view Tpwh, Tpws P1H P2H, SG Tpwr RG OS D1 D2 D3 D4 D18 D5..D12, S1..S512, D13..D17 D19 D20 KMPDC0120EA P1V, P2V, TG*15 P1H, P2H*15 SG RG TG - P1H Parameter Pulse width Rise and fall times Pulse width Rise and fall times Duty ratio Pulse width Rise and fall times Duty ratio Pulse width Rise and fall times Overlap time Symbol Tpwv Tprv, Tpfv Tpwh Tprh, Tpfh Tpws Tprs, Tpfs Tpwr Tprr, Tpfr Tovr Min. 6 200 500 10 40 500 10 40 100 5 3 Typ. 8 2000 50 2000 50 - Max. 60 60 - Unit s ns ns ns % ns ns % ns ns s *15: Symmetrical clock pulses should be overlapped at 50% of maximum amplitude. 6 CCD area image sensors S7170-0909, S7171-0909-01 Dimensional outlines (unit: mm) S7170-0909 Window 14.8* Photosensitive area 12.288 22.9 ± 0.3 22.4 ± 0.3 13 12.288 12.8* 24 12 1 2.54 ± 0.13 34.0 ± 0.34 4.8 ± 0.49 4.0 ± 0.44 3.4 ± 0.44 (24 ×) 0.5 ± 0.05 2.4 ± 0.15 Photosensitive surface 3.0 1st pin indication pad * Size of window that guarantees the transmittance in the “Spectral transmittance characteristic of window material” graph KMPDA0084EC 7 CCD area image sensors S7170-0909, S7171-0909-01 S7171-0909-01 50 ± 0.3 (42) 34.0 ± 0.34 Window 19.1 ± 0.13 12 19 ± 0.4 Photosensitive surface 22.9 ± 0.3 1 0.5 -0.03 13 2.0 ± 0.3 24 (4) 19 ± 0.2 22.4 ± 0.3 0.6 ± 0.1 7.78 ± 0.79 +0.05 16 ± 0.13* Photosensitive area 12.288 TE-cooler 1 ± 0.2 5.0 ± 0.4 1 pin indication pad 3.0 ± 0.2 * Size of window that guarantees the transmittance in the “Spectral transmittance characteristic of window material” graph. Values in parentheses indicate reference value. 2.54 ± 0.13 0.5 ± 0.07 27.94 ± 0.13 KMPDA0279EB KMPDA0279EB 8 CCD area image sensors S7170-0909, S7171-0909-01 Pin connections Pin no. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Symbol RD OS OD OG SG P2H P1H IG2H IG1H ISH TG*16 P2V P1V SS ISV IG2V IG1V RG S7170-0909 Function Reset drain Output transistor source Output transistor drain Output gate Summing gate Horizontal shift register clock-2 Horizontal shift register clock-1 Test point (horizontal input gate-2) Test point (horizontal input gate-1) Test point (horizontal input source) Transfer gate Vertical shift register clock-2 Vertical shift register clock-1 Substrate (GND) Test point (vertical input source) Test point (vertical input gate-2) Test point (vertical input gate-1) Reset gate Symbol RD OS OD OG SG P2H P1H IG2H IG1H ISH TG*16 P2V P1V Th1 Th2 PP+ SS ISV IG2V IG1V RG S7171-0909-01 Function Reset drain Output transistor source Output transistor drain Output gate Summing gate Remark (standard operation) +12 V RL=22 k: +20 V +3 V Same pulse as P2H Horizontal shift register clock-2 Horizontal shift register clock-1 Test point (horizontal input gate-2) Test point (horizontal input gate-1) Test point (horizontal input source) Transfer gate Vertical shift register clock-2 Vertical shift register clock-1 Thermistor Thermistor TE-coolerTE-cooler+ Substrate (GND) Test point (vertical input source) Test point (vertical input gate-2) Test point (vertical input gate-1) Reset gate -8 V -8 V Connect to RD Same pulse as P2V GND Connect to RD -8 V -8 V *16: Isolation gate between vertical register and horizontal register. In standard operation, TG should be applied the same pulse as P2V. Speci¿cations of built-in TE-cooler (S7171-0909-01) Parameter Internal resistance Maximum current*17 Maximum voltage Maximum heat absorption*20 Maximum temperature of heat radiating side Symbol Condition Rint Ta=25 °C Imax Tc*18=Th*19=25 °C Vmax Tc*18=Th*19=25 °C Qmax - Min. - Typ. 2.1 - Max. 2.0 4.2 4.5 70 Unit : A V W °C *17: If the current greater than this value Àows into the thermoelectric cooler, the heat absorption begins to decrease due to the Joule heat. It should be noted that this value is not the damage threshold value. To protect the thermoelectric cooler and maintain stable operation, the supply current should be less than 60 % of this maximum current. *18: Temperature of the cooling side of thermoelectric cooler *19: Temperature of the heat radiating side of thermoelectric cooler *20: This is a theoretical heat absorption level that offsets the temperature difference in the thermoelectric cooler when the maximum current is supplied to the unit. 9 CCD area image sensors S7170-0909, S7171-0909-01 (Typ. Ta=25 °C) 6 30 5 20 4 10 3 0 2 -10 1 -20 0 0 0.5 1.0 1.5 CCD temperature (°C) Voltage (V) Voltage vs. current CCD temperature vs. current -30 2.0 Current (A) KMPDB0180EA Specifications of built-in temperature sensor (S7171-0909-01) A thermistor chip is built in the same package with a CCD chip, and the CCD chip temperature can be monitored with it. A relation between the thermistor resistance and absolute temperature is expressed by the following equation. RT1 = RT2 × exp BT1/T2 (1/T1 - 1/T2) RT1: resistance at absolute temperature T1 [K] RT2: resistance at absolute temperature T2 [K] BT1/T2: B constant [K] The characteristics of the thermistor used are as follows. R298=10 k: B298/323=3450 K (Typ. Ta=25 °C) Resistance 1 MΩ 100 kΩ 10 kΩ 220 240 260 280 300 Temperature (K) KMPDB0111EA 10 CCD area image sensors S7170-0909, S7171-0909-01 Precaution for use (electrostatic countermeasures) O Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. O Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. O Provide ground lines or ground connection with the work-Àoor, work-desk and work-bench to allow static electricity to discharge. O Ground the tools used to handle these sensors, such as tweezers and soldering irons. It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of damage that occurs. Element cooling/heating temperature gradient rate When using an external cooler, the element cooling/heating temperature gradient rate should be set at less than 5 K/min. Multichannel detector heads (C7180, C7181) Features Designed for back-thinned CCD area image sensor C7180: for non-cooled type (S7170-0909) C7181: for TE-cooled type (S7171-0909-01) Choice of line binning operation/area scanning operation Built-in driver circuit Highly stable temperature controller (C7181) Cooling temperature: fixed at Ts=-10 ± 0.05 °C Operates with simple input signals High UV sensitivity and high quantum efficiency Compact configuration Connections to multichannel detector head and PC Shutter timing pulse* AC cable (100 to 240 V; included with the C7557-01) Trig. POWER Dedicated cable (Included with the C7557-01) SIGNAL I/O USB cable (Included with the C7557-01) TE CONTROL I/O Image sensor + Multichannel detector head C7557-01 PC (Windows 2000/XP/Vista) (USB 2.0) * Shutter, etc. are not available. KACCC0402EA 11 CCD area image sensors S7170-0909, S7171-0909-01 Multichannel detector head controller C7557-01 Features For control of multichannel detector head and data acquisition Easy control and data acquisition using supplied software via USB interface Connection example Shutter timing pulse* AC cable (100 to 240 V; included with the C7557-01) Trig. POWER Dedicated cable (Included with the C7557-01) SIGNAL I/O USB cable (Included with the C7557-01) TE CONTROL I/O Image sensor + Multichannel detector head C7557-01 PC (Windows 2000/XP/Vista) (USB 2.0) * Shutter, etc. are not available. KACCC0402EA Information described in this material is current as of May, 2011. Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact us for the delivery specification sheet to check the latest information. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KMPD1028E10 May 2011 DN 12