Si photodiode with preamp S9269 S9270 Photodiode and preamp integrated with feedback resistance and capacitance S9269 and S9270 are low-noise photosensors consisting of a Si photodiode, op amp, and feedback resistance and capacitance, all integrated into same package with a surface size equal to our standard ceramic packages. These photosensors are ideal for a wide range of photometric applications including analytical equipment and measurement equipment. The active area of the photodiode is internally connected to the GND terminal making it highly resistant to EMC noise. Combinations with various photodiodes such as UV sensitivity enhanced type, IR sensitivity suppressed type and IR sensitivity enhanced type are also available. (Custom order products) Features Applications Si photodiode for visible to near IR Si precision photometry Precision photometry Small package S9269: 10.1 × 8.9 × 40 t mm S9270: 16.5 × 15.0 × 4.15 t mm Active area S9269: 5.8 × 5.8 mm S9270: 10 × 10 mm General-purpose optical measurement FET input operational amplifier with low power dissipation Built-in Rf=1 GΩ, Cf=5 pF Low noise and NEP Absolute maximum ratings (Ta=25 °C) Parameter Supply voltage (op amp) Power dissipation Operating temperature Storage temperature Symbol Vcc P Topr Tstg Value ±20 500 -20 to +60 -20 to +80 Unit V mW °C °C Note: Absolute maximum ratings are the values that must not be exceeded at any time. If even one of the absolute maximum ratings is exceeded even for a moment, the product quality may be impaired. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 °C, Vcc=±15 V, RL=1 MΩ) Parameter Symbol Spectral response range Peak sensitivity wavelength Feedback resistance (built-in) * Feedback capacitance (built-in) * Photo sensitivity λ λp Rf Cf S Output noise voltage Vn Noise equivalent power NEP Output offset voltage Cut-off frequency Output voltage swing Supply current Vos fc Vo Icc Condition λ=λp Dark state, f=10 Hz Dark state, f=20 Hz λ=λp, f=10 Hz λ=λp, f=20 Hz Dark state -3 dB RL=10 kΩ Dark state Min. 0.5 - S9269 Typ. 340 to 1100 960 1 5 0.62 7.3 6.5 12 12 ±4 32 13 0.3 Max. 0.6 Min. 0.5 - S9270 Typ. 340 to 1100 960 1 5 0.62 9.7 9.1 16 17 ±4 32 13 0.3 Max. 0.6 Unit nm nm GΩ pF V/nW μVrms/Hz1/2 fW/Hz1/2 mV Hz V mA * Custom devices available with different Rf, Cf, etc. www.hamamatsu.com 1 Si photodiode with preamp S9269, S9270 Frequency response Spectral response (Typ. Ta=25 °C, Vcc=±15 V) 0.7 (Typ. Ta=25 °C, Vcc=±15 V) 10 0 0.5 Relative output (dB) Photo sensitivity (V/nW) 0.6 0.4 0.3 0.2 -10 -20 0.1 0 300 400 500 600 700 800 -30 0.001 900 1000 1100 0.01 0.1 1 10 Frequency (kHz) Wavelength (nm) KSPDB0239EB KSPDB0240EB NEP vs. frequency Output noise voltage vs. frequency (Typ. Ta=25 °C, Vcc=±15 V) 104 NEP (fW/Hz1/2) S9270 3 10 2 10 S9269 101 100 0.001 0.01 0.1 1 10 100 1000 (Typ. Ta=25 °C, Vcc=±15 V) 100 Output noise voltage (μVrms/Hz1/2) 105 S9270 10 S9269 1 0.1 0.01 0.001 0.01 0.1 1 10 100 1000 Frequency (kHz) Frequency (kHz) KSPDB0241EA KSPDB0242EA 2 Si photodiode with preamp S9269, S9270 Application circuit example V+ PKG Rf=1 GΩ Cf=5 pF - O PHOTODIODE + G VKSPDC0050EA Dimensional outline (unit: mm, tolerance unless otherwise noted: ±0.2) 10.1 ± 0.1 (Ceramic) 16.5 ± 0.2 (Ceramic) Y Y 8.9 ± 0.1 (Ceramic) X Photosensitive surface 12.5 Photosensitive surface Resin 7.4 ± 0.1 10.0 (PWB) 1.8 GND VccOUT Vcc+ KSPDA0160EB 0.9 (4 ×) 0.45 Cu-Zn ALLOY (4 ×)( 1.0) 5.08 ± 0.1 Resin potting may extend a maximum of 0.1 mm above the upper surface of the package. 1.0 max. 1.7 Solder Active area position accuracy versus package center -0.165 ≤ X ≤ +0.335 -0.25 ≤ Y ≤ +0.25 12.7 14.8 (PWB) 5.7 2.54 ± 0.1 1.5 8.0 8.8 (PWB) 4.0 7.62 2.54 ± 0.1 Solder (2.0) (5.0) PWB 13.8 (4 ×)( 1.0) (2.0) 1.7 (4 ×) 0.45 Cu-Zn ALLOY 1.0 max. Ceramic (5.0) 0.75 PWB 2.0 ± 0.1 Resin Ceramic Active area 10 × 10 2.15 ± 0.1 X 2.75 10.8 2.25 12.5 ± 0.2 0.5 16.3 (PWB) 5.08 ± 0.1 Active area 5.8 × 5.8 S9270 15.0 ± 0.15 (Ceramic) S9269 Active area position accuracy versus package center -0.3 ≤ X, Y ≤ +0.3 Resin potting may extend a maximum of 0.1 mm above the upper surface of the package. GND VccOUT Vcc+ KSPDA0161EB 3 Si photodiode with preamp S9269, S9270 Precautions for use O ESD S9269, S9270 may be damaged or their performance may deteriorate by such factors as electro static discharge from the human body, surge voltages from measurement equipment, leakage voltages from soldering irons and packing materials, etc. As a countermeasure against electro static discharge, the device, operator, work place and measuring jigs must all be set at the same potential. The following precautions must be observed during use: · To protect the device from electro static discharge which accumulate on the operator or the operator’s clothes, use a wrist strap or similar tools to ground the operator’s body via a high impedance resistor (1 MΩ). · A semiconductive sheet (1 MΩ to 100 MΩ) should be laid on both the work table and the floor in the work area. · When soldering, use an electrically grounded soldering iron with an isolation resistance of more than 10 MΩ. · For containers and packing, use of a conductive material or aluminum foil is effective. When using an antistatic material, use one with a resistance of 0.1 MΩ/cm2 to 1 GΩ/cm2. O Wiring If electric current or voltage is applied in reverse polarity to an electronic device such as a preamplifier, this can degrade device performance or destroy the device. Always check the wiring and dimensional outline to avoid misconnection. Information described in this material is current as of October, 2011. Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact us for the delivery specification sheet to check the latest information. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KSPD1066E02 Oct. 2011 DN 4