GaAsP photodiode Diffusion type Photodiode for visible light detection Features Applications Low dark current Analytical instrument High stability Color identification Structure / Absolute maximum ratings Type no. G1115 G1116 G1117 G1118 G1120 G3067 G2711-01 Dimensional outline/ Window material* Package /K /K /K /R /R /L /R TO-18 TO-5 TO-8 Ceramic Ceramic TO-18 Plastic Effective Photosensitive photosensitive area size area (mm) 1.3 × 1.3 2.7 × 2.7 5.6 × 5.6 1.3 × 1.3 5.6 × 5.6 1.3 × 1.3 1.3 × 1.3 Absolute maximum ratings Reverse voltage VR max Operating temperature Topr Storage temperature Tstg (V) (°C) (°C) 5 -30 to +80 -40 to +85 (mm2) 1.66 7.26 29.3 1.66 29.3 1.66 1.66 Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Type no. G1115 G1116 G1117 G1118 G1120 G3067 G2711-01 Photosensitivity S Temp. Terminal Spectral Peak Rise time Shunt Short circuit Dark (A/W) coefficient capacitance tr response sensitivity resistance current current of Ct VR=0 V range wavelength Rsh Isc ID ID VR=0 V max. R L =1 kΩ VR=10 mV 100 lx λp λ GaP He-Ne TCID f=10 kHz λp LED laser 560 nm 633 nm Min. Typ. VR=10 mV VR=1 V Min. Typ. (nm) (nm) (μA) (μA) (pA) (pA) (times/°C) (μs) (pF) (GΩ) (GΩ) 0.12 0.15 1 10 1 300 10 80 0.45 0.6 2.5 25 4 1400 4 30 2 2.5 5 50 15 6000 2 15 300 to 680 640 0.3 0.29 0.29 0.12 0.15 1 10 1.07 1 300 10 80 2 2.5 5 50 15 6000 2 15 0.75 0.95 1 10 1 300 10 80 0.15 0.18 1 10 1 300 10 80 Noise equivalent power NEP (W/Hz1/2) 1.5 × 10-15 2.5 × 10-15 3.5 × 10-15 1.5 × 10-15 3.5 × 10-15 1.5 × 10-15 1.5 × 10-15 * Window material K: borosilicate glass, L: lens type borosilicate glass, R: resin coating www.hamamatsu.com 1 GaAsP photodiode Diffusion type Spectral response Photosensitivity temperature characteristic (Typ. Ta=25 °C) Photosensitivity (A/W) 0.4 0.3 0.2 0.1 0 200 300 400 500 600 700 (Typ.) +1.5 Temperature coefficient (%/°C) 0.5 +1.0 +0.5 0 -0.5 200 800 300 400 Wavelength (nm) 500 600 700 Wavelength (nm) KGPDB0019EA KGPDB0020EA Rise time vs. load resistance Dark current vs. reverse voltage (Typ. Ta=25 °C, VR=0 V) 10 ms 800 (Typ. Ta=25 °C) 1 nA G1117, G1120 1 ms 100 pA Dark current Rise time G1116 100 µs 10 µs G1115, G1118 G3067, G2711-01 G1117, G1120 10 pA G1116 1 pA 1 µs G1115, G1118 G2711-01, G3067 100 ns 2 10 103 104 105 106 Load resistance (Ω) 100 fA 0.001 0.01 0.1 1 10 Reverse voltage(V) KGPDB0021EA KGPDB0022EA 2 GaAsP photodiode Diffusion type Shunt resistance vs. ambient temperature Short circuit current linearity (Typ. VR=10 mV) 10 TΩ G1115, G1118 G3067, G2711-01 -2 10 1 TΩ Short circuit current (A) Shunt resistance G1116 100 GΩ 10 GΩ 1 GΩ G1117, G1120 100 MΩ 10 MΩ -20 (Typ. Ta=25 °C, A light source fully illuminated) 100 RL=100 Ω 10-4 10-6 -8 10 10-10 10-12 10-14 0 20 40 60 80 Refer to NEP value in characteristic table. 10-16 -16 -14 -12 -10 -8 -6 -4 -2 0 10 10 10 10 10 10 10 10 10 Ambient temperature (°C) Incident light level (W) KGPDB0023EA KGPDB0008EB Dimensional outline (unit: mm) G1115 5.4 ± 0.2 9.1 ± 0.2 Window 5.9 ± 0.1 2.9 Photosensitive surface 20 0.45 Lead 14 0.45 Lead 8.1 ± 0.1 4.1 ± 0.2 3.55 ± 0.2 4.7 ± 0.1 2.4 Window 3.0 ± 0.2 G1116 5.08 ± 0.2 2.54 ± 0.2 Connected to case Borosilicate glass window may extend a maximum of 0.1 mm beyond the upper surface of the cap. KGPDA0012EA Connected to case Borosilicate glass window may extend a maximum of 0.2 mm beyond the upper surface of the cap. KGPDA0013EA 3 GaAsP photodiode Diffusion type G1117 G1118 13.9 ± 0.2 Cathode terminal mark Photosensitive area 1.5 ± 0.2 Photosensitive surface 0.6 1.9 Photosensitive surface 0.45 Lead 6.0 ± 0.2 5.0 ± 0.2 5.0 ± 0.2 12.35 ± 0.1 15 Window 10.5 ± 0.1 14 7.5 ± 0.2 Mark( 1.4) 0.45 Lead 3.0 ± 0.2 Connected to case Borosilicate glass window may extend a maximum of 0.2 mm beyond the upper surface of the cap. KGPDA0014EA KGPDA0002EA G3067 10.1 ± 0.1 8.9 ± 0.1 14 2.4 10.5 0.45 Lead 4.5 ± 0.2 Photosensitive surface 2.0 ± 0.1 0.65 Photosensitive surface 0.3 5.4 ± 0.2 4.65 ± 0.1 Photosensitive area 2.15 ± 0.3 G1120 0.5 Lead 2.54 ± 0.2 9.2 ± 0.3 7.4 ± 0.2 8.0 ± 0.3 Anode terminal mark Coating resin may extend a maximum of 0.1 mm beyond the upper surface of the package. KGPDA0008EA Connected to case KGPDA0009EA 4 GaAsP photodiode Diffusion type G2711-01 5.5 2.54 3° 4.5 10° 5.6 ± 0.2 (Including burr) 5.4 0.7 0.5 4.6 ± 0.2 (Including burr) 0.6 1.0 5.75 ± 0.2 Photosensitive surface 2.0 5° 4.5 ± 0.4 Anode Cathode NC Cathode 3° 0.25 7.5 ± 5° KGPDA0003EA Information described in this material is current as of May, 2012. Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact us for the delivery specification sheet to check the latest information. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KGPD1002E02 May 2012 DN 5