GaP photodiode G1961 G1962 G1963 Schottky type Features Applications Low dark current Analytical instruments High UV sensitivity UV detection Structure / Absolute maximum ratings Type no. Dimensional outline/ Window material /Q* /Q /Q G1961 G1962 G1963 Package TO-18 TO-5 TO-8 Effective Photosensitive photosensitive area size area (mm) 1.1 × 1.1 2.3 × 2.3 4.6 × 4.6 Absolute maximum ratings Reverse voltage VR max Operating temperature Topr Storage temperature Tstg (V) (°C) (°C) 5 -10 to +60 -20 to +70 (mm2) 1.0 5.2 21 * Window material Q: quartz glass Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Type no. G1961 G1962 G1963 Spectral Peak response sensitivity range wavelength λ λp (nm) (nm) 190 to 550 440 Photosensitivity Temp. Terminal Rise time Short circuit Dark S coefficient capacitance tr current current (A/W) of Ct VR=0 V Isc ID VR=0 V ID max. RL=1 kΩ 1000 lx TCID f=10 kHz Hg λp line 400 nm Min. Typ. VR=10 mV VR=1 V 254 nm (μA) (μA) (pA) (pA) (times/°C) (μs) (pF) 0.04 0.05 2.5 25 5 400 0.12 0.03 0.1 0.23 0.3 5 50 1.11 10 1500 0.75 0.9 10 100 30 5000 www.hamamatsu.com Shunt resistance Rsh VR=10 mV Min. (GΩ) 4 2 1 Typ. (GΩ) 40 20 1 Noise equivalent power NEP (W/Hz1/2) 5.4 × 10-15 7.6 × 10-15 1.1 × 10-14 1 GaP photodiode G1961, G1962, G1963 Spectral response Photosensitivity temperature characteristic (Typ. Ta=25 °C) 0.15 0.1 0.05 0 190 300 400 500 600 700 (Typ.) +1.5 Temperature coefficient (%/°C) Photosensitivity (A/W) 0.2 +1.0 +0.5 0 -0.5 190 800 300 400 Wavelength (nm) 500 600 700 Wavelength (nm) KGPDB0014EA KGPDB0017EB Rise time vs. load resistance Dark current vs. reverse voltage (Typ. Ta=25 °C, VR=0 V) 10 ms 800 (Typ. Ta=25 °C) 1 nA G1963 1 ms 100 pA Dark current Rise time G1962 100 µs G1961 10 µs G1963 10 pA G1962 1 pA 1 µs 100 ns 2 10 G1961 3 10 4 10 5 10 6 10 Load resistance (Ω) 100 fA 0.001 0.01 0.1 1 10 Reverse voltage (V) KGPDB0015EA KGPDB0016EA 2 GaP photodiode G1961, G1962, G1963 Shunt resistance vs. ambient temperature Short circuit current linearity (Typ. VR=10 mV) 10 TΩ 10-2 Short circuit current (A) 1 TΩ G1961 100 GΩ G1962 10 GΩ G1963 1 GΩ 100 MΩ RL=100 Ω 10-4 10-6 10-8 -10 10 -12 10 -14 10 10 MΩ -20 0 +20 +40 +60 +80 Refer to NEP value in characteristic table. 10-16 -16 -14 10 10 10-12 10-10 10-8 10-6 10-4 10-2 100 Incident light level (W) Ambient temperature (°C) KGPDB0018EA KGPDB0008EB Dimensional outline (unit: mm) G1961 G1962 9.1 ± 0.2 3.55 ± 0.2 Window 5.9 ± 0.1 0.45 Lead 8.1 ± 0.1 2.9 Photosensitive surface 0.45 Lead 20 4.7 ± 0.1 4.1 ± 0.2 5.4 ± 0.2 2.4 Window 3.0 ± 0.2 14 Shunt resistance (Typ. Ta=25 °C, A light source fully illuminated) 0 10 5.08 ± 0.2 2.54 ± 0.2 Connected to case Connected to case KGPDA0032EA KGPDA0033EA 3 GaP photodiode G1961, G1962, G1963 G1963 13.9 ± 0.2 1.9 Photosensitive surface 0.45 Lead 5.0 ± 0.2 12.35 ± 0.1 15 Window 10.5 ± 0.1 7.5 ± 0.2 Mark ( 1.4) Connected to case KGPDA0034EA Information described in this material is current as of May, 2012. Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact us for the delivery specification sheet to check the latest information. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KGPD1007E02 May 2012 DN 4