Transistors SMD Type NPN Silicon Bias Resistor Transistor KMUN2231T1 SOT-23 ■ Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Simplifies Circuit Design 0.4 3 1 0.55 ● Reduces Component Count +0.1 1.3-0.1 +0.1 2.4-0.1 ● Reduces Board Space 2 +0.1 0.95-0.1 +0.1 1.9-0.1 R2 +0.1 0.97-0.1 PIN 3 COLLECTOR (OUTPUT) 1.Base PIN 2 EMITTER (GROUND) 0-0.1 R1 +0.1 0.38-0.1 PIN 1 BASE (INPUT) +0.05 0.1-0.01 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Collector Current -Continuous IC 0.1 A Collector Power dissipation PC 0.23 W RθJA 540 ℃/W Junction temperature Tj 150 ℃ Storage temperature Tstg -55 to +150 ℃ Thermal Resistance Junction-to-Ambient ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO Ic= 10 μA，IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO Ic= 2mA， IB=0 50 V Collector cut-off current ICBO VCB= 50 V , IE=0 0.1 μA Collector cut-off current ICEO VCE= 50 V , IB=0 0.5 μA Emitter cut-off current IEBO VEB= 6V , IC=0 2.3 mA 0.25 V DC current gain Collector-emitter saturation voltage hFE VCE=10V, IC= 5.0mA VCE(sat) IC = 10 mA, IB = 5 mA Output Voltage (on) VOL VCC = 5.0 V, VB = 2.5 V, RL = 1.0kΩ Output Voltage (off) VOH VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ 8 15 4.9 V Input Resistor R1 1.5 2.2 2.9 Resistor Ratio R1/R2 0.8 1.0 1.2 kΩ www.kexin.com.cn 1