Power Module 1700V 300A IGBT Module MG17300WB-BN4MM RoHS Features • IGBT3 CHIP(1700V Trench+Field Stop technology) • D IODE CHIP(1700V EMCON 3 technology) • L ow turn-off losses, short tail current • F ree wheeling diodes with fast and soft reverse recovery • V CE(sat) with positive temperature coefficient Applications • AC motor control • Motion/servo control • Inverter and power supplies • Photovoltaic/Fuel cell Module Characteristics (TJ = 25°C, unless otherwise specified) Symbol Parameters TJ max Max. Junction Temperature Test Conditions Min Typ Max Unit 150 °C TJ op Operating Temperature -40 125 °C Tstg Storage Temperature -40 125 °C Visol Insulation Test Voltage CTI Comparative Tracking Index AC, t=1min 3500 V 250 Torque Module-to-Sink Recommended (M5) 2.5 Torque Module Electrodes Recommended (M6) 3 Weight 5 N·m 5 N·m 350 g Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Values Unit VCES Collector - Emitter Voltage TJ=25°C 1700 V VGES Gate - Emitter Voltage IGBT IC DC Collector Current ICM Repetitive Peak Collector Current Ptot Power Dissipation Per IGBT ±20 V TC=25°C 375 A TC=80°C 300 A tp=1ms 600 A 1650 W Diode VRRM Repetitive Reverse Voltage IF(AV) Average Forward Current IFRM Repetitive Peak Forward Current I2t MG17300WB-BN4MM TJ=25°C 1700 V TC=25°C 300 A TC=80°C 200 A tp=1ms 600 A TJ =125°C, t=10ms, VR=0V 14500 A 2s 1 313 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:11/20/14 Power Module 1700V 300A IGBT Module Electrical and Thermal Specifications (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max Unit Gate - Emitter Threshold Voltage VCE=VGE, IC=12mA 5.0 Collector - Emitter IC=300A, VGE=15V, TJ=25°C 5.8 6.4 V 2.0 2.45 Saturation Voltage IC=300A, VGE=15V, TJ=125°C 2.4 V VCE=1700V, VGE=0V, TJ=25°C 3 mA VCE=1700V, VGE=0V, TJ=125°C 20 mA 400 nA IGBT VGE(th) VCE(sat) ICES Collector Leakage Current IGES Gate Leakage Current RGint Integrated Gate Resistor Qge Gate Charge Cies Input Capacitance Cres Reverse Transfer Capacitance td(on) Turn - on Delay Time tr Rise Time td(off) Turn - off Delay Time VCE=0V, VGE=±15V, TJ=125°C VCE=900V, IC=300A , VGE=±15V VCE=25V, VGE=0V, f =1MHz VCC=900V IC=300A RG =4.7Ω tf Fall Time Eon Turn - on Energy VGE=±15V Inductive Load Eoff Turn - off Energy ISC Short Circuit Current RthJC -400 V 2.5 Ω 3.4 μC 27 nF 0.9 nF TJ=25°C 280 ns TJ=125°C 300 ns TJ=25°C 70 ns TJ=125°C 85 ns TJ=25°C 810 ns TJ=125°C 1000 ns TJ=25°C 180 ns TJ=125°C 300 ns TJ=25°C 65.5 mJ TJ=125°C 95 mJ TJ=25°C 64 mJ TJ=125°C 94 mJ tpsc≤10μS , VGE=15V; TJ=125°C , VCC=1000V 1200 Junction-to-Case Thermal Resistance (Per IGBT) A 0.075 K/W Diode VF Forward Voltage IRRM Max. Reverse Recovery Current Qrr Reverse Recovery Charge Erec Reverse Recovery Energy RthJCD IF=300A, VGE=0V, TJ =25°C 1.8 IF=300A, VGE=0V, TJ =125°C 1.9 IF=300A, VR=900V diF/dt=-3600A/µs TJ=125°C 380 A 130 μC 71.5 mJ Junction-to-Case Thermal Resistance (Per Diode) 2.2 V V 0.13 K/W Max Unit NTC Characteristics (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions R25 Resistance Tc=25°C B25/50 MG17300WB-BN4MM 2 314 Min Typ 5 KΩ 3375 K ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:11/20/14 Power Module 1700V 300A IGBT Module Figure 1: Typical Output Characteristics for IGBT Inverter Figure 2: Typical Output Characteristics for IGBT Inverter 600 600 VGE =15V 500 500 400 Tj =25°C IC (A) IC (A) 400 300 200 200 Tj =125°C 100 100 0 0 2.0 VCE˄V˅ 1.0 0 4.0 3.0 Figure 3: T ypical Transfer Characteristics for IGBT Inverter 500 VCE=900V IC=300A VGE=±15V Tj =125°C VCE =20V 500 400 Tj =25°C Eon Eon Eoff (mJ) 400 IC (A) 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCE˄V˅ Figure 4: Switching Energy vs. Gate Resistor for IGBT Inverter 600 300 300 200 Tj =125°C 200 100 100 0 Tj =125°C 300 Eoff 5 6 7 8 9 10 VGE˄V˅ 11 12 0 13 Figure 5: Switching Energy vs. Collector Current for IGBT Inverter 250 200 0 5 10 15 20 25 30 RG˄Ω˅ 35 40 45 Figure 6: Reverse Biased Safe Operating Area for IGBT Inverter 700 VCE=900V RG=4.7Ω VGE=±15V Tj =125°C 600 Eon Eoff (mJ) 500 150 Eoff IC (A) 400 Eon 100 300 RG=4.7Ω VGE=±15V Tj =125°C 200 50 100 0 0 MG17300WB-BN4MM 100 200 400 300 IC˄A˅ 500 0 600 3 315 0 200 600 1000 VCE˄V˅ 1400 1800 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:11/20/14 Power Module 1700V 300A IGBT Module Figure 7: Diode Forward Characteristics for Diode Inverter Figure 8: Switching Energy vs. Gate Resistort for Diode Inverter 600 100 500 80 Erec (mJ) IF (A) 400 300 100 20 Tj =25°C 0 0.5 1.0 60 40 Tj =125°C 200 0 IF=300A VCE=900V Tj =125°C 2.0 1.5 VF˄V˅ 2.5 0 3.0 0 10 20 30 40 50 RG˄Ω˅ Figure 9: Transient Thermal Impedance of Diode and IGBT Inverter Figure 10: NTC Characteristics 1 100000 ZthJC (K/W) Diode 0.1 10000 R IGBT 0.01 1000 0.001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (seconds) 100 0 20 40 80 100 120 140 160 60 TC˄°C˅ Circuit Diagram MG17300WB-BN4MM 4 316 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:11/20/14 Power Module 1700V 300A IGBT Module Dimensions-Package WB The foot pins are in gold / nickel coating Packing Options Part Number Marking Weight Packing Mode M.O.Q MG17300WB-BN4MM MG17300WB-BN4MM 350g Bulk Pack 20 Part Marking System Part Numbering System MG17300 WB - B N4 MM PRODUCT TYPE M: Power Module MG17300WB-BN4MM ASSEMBLY SITE WAFER TYPE MODULE TYPE G: IGBT VOLTAGE RATING 17: 1700V CIRCUIT TYPE CURRENT RATING PACKAGE TYPE LOT NUMBER Space reserved for QR code 300: 300A MG17300WB-BN4MM 5 317 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:11/20/14