Power Module 1200V IGBT Family MG12300D-BN2MM Series 300A Dual IGBT RoHS ® Features • H igh short circuit capability, self limiting short circuit current • F ast switching and short tail current • IGBT3 CHIP(Trench+Field Stop technology) • V CE(sat) with positive temperature coefficient • F ree wheeling diodes with fast and soft reverse recovery • Low switching losses Applications Agency Approvals AGENCY AGENCY FILE NUMBER • Motor drives • SMPS and UPS • Inverter • Welder • Converter • Induction Heating E71639 Module Characteristics (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max. Junction Temperature TJ max) Max Unit 150 °C TJ op Operating Temperature -40 125 °C Tstg Storage Temperature -40 125 °C Visol Insulation Test Voltage AC, t=1min Comparative Tracking Index Module case exposed to 0.1% ammonium chloride solution per UL and IEC standards CTI 3000 V 350 V Torque Module-to-Sink Recommended (M6) 3 5 N·m Torque Module Electrodes Recommended (M6) 2.5 5 N·m Weight 320 g Absolute Maximum Ratings (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Values Unit VCES Collector - Emitter Voltage TJ=25°C 1200 V VGES Gate - Emitter Voltage IGBT IC DC Collector Current ICM Repetitive Peak Collector Current Ptot Power Dissipation Per IGBT ±20 V TC=25°C 480 A TC=80°C 300 A tp=1ms 600 A 1450 W Diode VRRM Repetitive Reverse Voltage IF(AV) Average Forward Current IFRM Repetitive Peak Forward Current I2t TJ=25°C 1200 V TC=25°C 480 A TC=80°C 300 A tp=1ms 600 A TJ =125°C, t=10ms, VR=0V 18000 A2s Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. MG12300D-BN2MM 1 ©2014 Littelfuse, Inc Specifications are subject to change without notice. Revised:09/18/14 Power Module 1200V IGBT Family Electrical and Thermal Specifications (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max Unit Gate - Emitter Threshold Voltage VCE=VGE, IC=12mA 5.0 5.8 6.5 V Collector - Emitter Saturation Voltage IC=300A, VGE=15V, TJ=25°C 1.7 IC=300A, VGE=15V, TJ=125°C 1.9 IGBT VGE(th) VCE(sat) ICES Collector Leakage Current IGES Gate Leakage Current RGint Intergrated Gate Resistor Qge Gate Charge Cies Input Capacitance Cres Reverse Transfer Capacitance td(on) Turn - on Delay Time tr Rise Time td(off) Turn - off Delay Time VCE=1200V, VGE=0V, TJ=25°C VCE=1200V, VGE=0V, TJ=125°C VCE=0V,VGE=±15V, TJ=125°C VCE=600V, IC=300A , VGE=±15V VCE=25V, VGE=0V, f =1MHz VCC=600V IC=300A RG =2.4Ω tf Fall Time Eon Turn - on Energy Eoff Turn - off Energy ISC Short Circuit Current VGE=±15V Inductive Load -400 V 1 mA 5 mA 400 μA 2.5 Ω 2.8 μC 21 nF 0.85 nF TJ =25°C 160 ns TJ =125°C 170 ns TJ =25°C 40 ns TJ =125°C 45 ns TJ =25°C 450 ns TJ =125°C 520 ns TJ =25°C 100 ns TJ =125°C 160 ns TJ =25°C 16.5 mJ TJ =125°C 25 mJ TJ =25°C 24.5 mJ TJ =125°C 37 mJ 1200 A tpsc≤10μS , VGE=15V TJ=125°C,VCC=900V Junction-to-Case Thermal Resistance (Per IGBT) RthJC V 0.085 K/W Diode Forward Voltage VF IF=300A , VGE=0V, TJ =25°C 1.65 V IF=300A , VGE=0V, TJ =125°C 1.65 V IRRM Max. Reverse Recovery Current IF=300A , VR=600V 270 A Qrr Reverse Recovery Charge diF/dt=-6000A/μs 56 μC Erec Reverse Recovery Energy TJ=125°C 26 mJ RthJCD Junction-to-Case Thermal Resistance (Per Diode) 0.15 K/W MG12300D-BN2MM 2 ©2014 Littelfuse, Inc Specifications are subject to change without notice. Revised:09/18/14 Power Module 1200V IGBT Family Figure 1: Typical Output Characteristics Figure 2: Typical Output Characteristics 600 500 VGE=19V VGE =15V VGE=15V VGE=13V 400 IC (A) VGE=17V TVj =25°C VGE=11V 300 200 VGE=9V TVj =125°C 100 0 0 0.5 1.0 1.5 2.0 VCE˄V˅ 2.5 3.0 Figure 3: T ypical Transfer characteristics Figure 4: Switching Energy vs. Gate Resistor Figure 5: Switching Energy vs. Collector Current Figure 6: R everse Biased Safe Operating Area MG12300D-BN2MM 3 ©2014 Littelfuse, Inc Specifications are subject to change without notice. Revised:09/18/14 Power Module 1200V IGBT Family Figure 7: Diode Forward Characteristics Figure 8: S witching Energy vs. Gate Resistort Figure 9: Switching Energy vs. Forward Current Figure 10: T ransient Thermal Impedance MG12300D-BN2MM 4 ©2014 Littelfuse, Inc Specifications are subject to change without notice. Revised:09/18/14 Power Module 1200V IGBT Family Dimensions-Package D Circuit Diagram and Pin Assignment Packing Options Part Number Marking Weight Packing Mode M.O.Q MG12300D-BN2MM MG12300D-BN2MM 320g Bulk Pack 60 Part Marking System Part Numbering System MG12300D-BN2MM PRODUCT TYPE M: Power Module ASSEMBLY SITE MODULE TYPE G: IGBT VOLTAGE RATING 12: 1200V WAFER TYPE CURRENT RATING PACKAGE TYPE 300: 300A MG12300D-BN2MM CIRCUIT TYPE B: 2x(IGBT+FWD) D: Package D 5 ©2014 Littelfuse, Inc Specifications are subject to change without notice. Revised:09/18/14