Power Module 1200V 50A IGBT Module MG1250H-XN2MM RoHS Features • F ree wheeling diodes with fast and soft reverse recovery • High level of integration CHIP(Trench+Field • IGBT Stop technology) 3 • Low saturation voltage and positive temperature coefficient • F ast switching and short tail current • Solderable pins for PCB mounting • Temperature sense included Applications • AC motor control • Motion/servo control • Inverter and power supplies Module Characteristics (TJ = 25°C, unless otherwise specified) Symbol Parameters TJ max Max. Junction Temperature Test Conditions Min Typ Max Unit 150 °C TJ op Operating Temperature -40 125 °C Tstg Storage Temperature -40 125 °C Visol Insulation Test Voltage CTI Comparative Tracking Index Md Mounting Torque AC, t=1min 3000 V 250 Recommended (M5) Weight 2.5 5 N·m 180 g Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Values Unit TJ=25°C 1200 V ±20 V TC=25°C 75 A TC=80°C 50 A tp=1ms 100 A 260 W IGBT VCES Collector - Emitter Voltage VGES Gate - Emitter Voltage IC DC Collector Current ICM Repetitive Peak Collector Current Ptot Power Dissipation Per IGBT Diode VRRM Repetitive Reverse Voltage IF(AV) Average Forward Current IFRM Repetitive Peak Forward Current I 2t MG1250H-XN2MM TJ=25°C 1200 V TC=25°C 75 A TC=80°C 50 A tp=1ms 100 A TJ =125°C, t=10ms, VR=0V 680 A 2s 1 187 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:11/20/14 Power Module 1200V 50A IGBT Module Electrical and Thermal Specifications (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max Unit Gate - Emitter Threshold Voltage VCE=VGE, IC=2mA 5.0 5.8 6.5 V Collector - Emitter IC=50A, VGE=15V, TJ=25°C 1.7 V Saturation Voltage IC=50A, VGE=15V, TJ=125°C 1.9 V IGBT VGE(th) VCE(sat) IICES Collector Leakage Current IGES Gate Leakage Current RGint Integrated Gate Resistor Qge Gate Charge Cies Input Capacitance Cres Reverse Transfer Capacitance td(on) Turn - on Delay Time tr Rise Time td(off) Turn - off Delay Time VCE=1200V, VGE=0V, TJ=25°C 1 mA VCE=1200V, VGE=0V, TJ=125°C 10 mA 400 nA VCE=0V, VGE=±15V, TJ=125°C VCE=600V, IC=50A , VGE=±15V VCE=25V, VGE=0V, f =1MHz VCC=600V IC=50A RG =18Ω tf Fall Time Eon Turn - on Energy VGE=±15V Inductive Load Eoff Turn - off Energy ISC Short Circuit Current RthJC -400 4.0 Ω 0.47 μC 3.6 nF 0.16 nF TJ=25°C 90 ns TJ=125°C 90 ns TJ=25°C 30 ns TJ=125°C 50 ns TJ=25°C 420 ns TJ=125°C 520 ns TJ=25°C 70 ns TJ=125°C 90 ns TJ=25°C 4.9 mJ TJ=125°C 6.6 mJ TJ=25°C 4.0 mJ TJ=125°C 4.9 mJ tpsc≤10μS , VGE=15V; TJ=125°C , VCC=900V 200 Junction-to-Case Thermal Resistance (Per IGBT) A 0.48 K/W Diode VF Forward Voltage tRR Reverse Recovery Time IRRM Max. Reverse Recovery Current Erec Reverse Recovery Energy RthJCD IF=50A, VGE=0V, TJ =25°C 1.65 V IF=50A, VGE=0V, TJ =125°C 1.65 V IF=50A, VR=600V diF/dt=-1200A/µs TJ=125°C 275 ns 50 A 4.4 mJ Junction-to-Case Thermal Resistance (Per Diode) 0.78 K/W Max Unit NTC Characteristics (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions R25 Resistance Tc=25°C B25/50 MG1250H-XN2MM 2 188 Min Typ 5 KΩ 3375 K ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:11/20/14 Power Module 1200V 50A IGBT Module Figure 1: Typical Output Characteristics for IGBT Inverter Figure 2: Typical Output Characteristics for IGBT Inverter 100 100 VGE =19V VGE =17V VGE =15V VGE =13V VGE =11V VGE = 9V VGE =15V 80 Tj =25°C 60 IC (A) IC (A) 80 40 TJ =125°C 40 Tj =125°C 20 0 0 60 20 0.5 1.0 1.5 2.0 VCE˄V˅ 2.5 3.0 0 3.5 Figure 3: T ypical Transfer Characteristics for IGBT Inverter 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCE˄V˅ Figure 4: Switching Energy vs. Gate Resistor for IGBT Inverter 100 12 VCE=600V IC=50A VGE=±15V Tj =125°C VCE =20V 10 80 60 Eon Eoff (mJ) IC (A) Tj =25°C Tj =125°C 40 20 0 5 20 16 6 7 9 8 VGE˄V˅ 10 11 6 4 0 12 Eoff VCE=600V RG=18Ω VGE=±15V TVj =125°C IC (A) 4 30 40 60 40 RG=18Ω VGE=±15V Tj =125°C 20 20 20 RG˄Ω˅ 80 Eoff 0 0 10 100 Eon 8 0 Figure 6: Reverse Biased Safe Operating Area for IGBT Inverter 12 MG1250H-XN2MM Eon 2 Figure 5: Switching Energy vs. Collector Current for IGBT Inverter Eon Eoff (mJ) 8 40 60 IC˄A˅ 80 0 100 3 189 0 200 400 600 800 1000 1200 1400 VCE˄V˅ ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:11/20/14 Power Module 1200V 50A IGBT Module Figure 7: Diode Forward Characteristics for Diode Inverter Figure 8: Switching Energy vs. Gate Resistort for Diode Inverter 100 8.0 80 Erec (mJ) 6.0 60 IF (A) IF=50A VCE=600V Tj =125°C 4.0 40 Tj =125°C 2.0 20 Tj =25°C 0 0 1.0 1.5 VF˄V˅ 0.5 2.0 0 2.5 20 30 40 Figure 10: Transient Thermal Impedance of Diode and IGBT-inverter 1 8.0 RG=18Ω VCE=600V Tj =125°C Diode IGBT ZthJC (K/W) Erec (mJ) 10 RG˄Ω˅ Figure 9: Switching Energy vs. Forward Current Diode-inverter 6.0 0 4.0 0.1 2.0 0 0 20 40 60 80 0.01 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (seconds) 100 IF (A) Figure 11: NTC Characteristics 100000 10000 R 1000 100 0 MG1250H-XN2MM 20 40 80 100 120 140 160 60 TC˄°C˅ 4 190 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:11/20/14 Power Module 1200V 50A IGBT Module Circuit Diagram Dimensions-Package H The foot pins are in gold / nickel coating Packing Options Part Number Marking Weight Packing Mode M.O.Q MG1250H-XN2MM MG1250H-XN2MM 180g Bulk Pack 40 Part Marking System Part Numbering System MG12 50 H - X N2 MM PRODUCT TYPE M: Power Module ASSEMBLY SITE MODULE TYPE G: IGBT VOLTAGE RATING 12: 1200V WAFER TYPE CURRENT RATING 50: 50A PACKAGE TYPE MG1250H-XN2MM MG1250H-XN2MM LOT NUMBER CIRCUIT TYPE 5 191 Space reserved for QR code ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:11/20/14