Power Module 1200V 25A IGBT Module MG1225H-XN2MM RoHS Features • High level of integration CHIP(Trench+Field • IGBT Stop technology) 3 • Low saturation voltage and positive temperature coefficient • F ast switching and short tail current • F ree wheeling diodes with fast and soft reverse recovery • Solderable pins for PCB mounting • Temperature sense included Applications • AC motor control • Motion/servo control • Inverter and power supplies Module Characteristics (TJ = 25°C, unless otherwise specified) Symbol Parameters TJ max Max. Junction Temperature Test Conditions Min Typ Max Unit 150 °C TJ op Operating Temperature -40 125 °C Tstg Storage Temperature -40 125 °C Visol Insulation Test Voltage CTI Comparative Tracking Index Md Mounting Torque AC, t=1min 3000 V 250 Recommended (M5) Weight 2.5 5 N·m 180 g Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Values Unit VCES Collector - Emitter Voltage TJ=25°C 1200 V VGES Gate - Emitter Voltage IGBT IC DC Collector Current ICM Repetitive Peak Collector Current Ptot Power Dissipation Per IGBT ±20 V TC=25°C 40 A TC=80°C 25 A tp=1ms 50 A 147 W Diode VRRM Repetitive Reverse Voltage IF(AV) Average Forward Current IFRM Repetitive Peak Forward Current It 2 MG1225H-XN2MM TJ=25°C 1200 V TC=25°C 35 A TC=80°C 25 A tp=1ms 50 A TJ =125°C, t=10ms, VR=0V 200 A 2s 1 181 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:11/20/14 Power Module 1200V 25A IGBT Module Electrical and Thermal Specifications (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max Unit Gate - Emitter Threshold Voltage VCE=VGE, IC=1mA 5.0 5.8 6.5 V Collector - Emitter IC=25A, VGE=15V, TJ=25°C 1.7 V Saturation Voltage IC=25A, VGE=15V, TJ=125°C 1.9 V IGBT VGE(th) VCE(sat) IICES Collector Leakage Current IGES Gate Leakage Current RGint Integrated Gate Resistor Qge Gate Charge Cies Input Capacitance Cres Reverse Transfer Capacitance td(on) Turn - on Delay Time tr Rise Time td(off) Turn - off Delay Time VCE=1200V, VGE=0V, TJ=25°C 0.1 mA VCE=1200V, VGE=0V, TJ=125°C 1 mA 400 nA VCE=0V, VGE=±15V, TJ=125°C VCE=600V, IC=25A , VGE=±15V VCE=25V, VGE=0V, f =1MHz VCC=600V IC=25A RG =36Ω tf Fall Time Eon Turn - on Energy VGE=±15V Inductive Load Eoff Turn - off Energy ISC Short Circuit Current RthJC -400 8.0 Ω 0.24 μC 1.81 nF 0.08 nF TJ=25°C 90 ns TJ=125°C 90 ns TJ=25°C 30 ns TJ=125°C 50 ns TJ=25°C 420 ns TJ=125°C 520 ns TJ=25°C 70 ns TJ=125°C 90 ns TJ=25°C 2.4 mJ TJ=125°C 3.5 mJ TJ=25°C 1.8 mJ TJ=125°C 2.1 mJ tpsc≤10μS , VGE=15V; TJ=125°C , VCC=900V 100 Junction-to-Case Thermal Resistance (Per IGBT) A 0.85 K/W Diode VF Forward Voltage tRR Reverse Recovery Time IRRM Max. Reverse Recovery Current Erec Reverse Recovery Energy RthJCD IF=25A, VGE=0V, TJ =25°C 1.55 V IF=25A, VGE=0V, TJ =125°C 1.54 V IF=25A, VR=600V diF/dt=-400A/µs TJ=125°C 200 ns 20 A 1.5 mJ Junction-to-Case Thermal Resistance (Per Diode) 1.4 K/W Max Unit NTC Characteristics (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions R25 Resistance Tc=25°C B25/50 MG1225H-XN2MM 2 182 Min Typ 5 KΩ 3375 K ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:11/20/14 Power Module 1200V 25A IGBT Module Figure 1: Typical Output Characteristics for IGBT Inverter Figure 2: Typical Output Characteristics for IGBT Inverter 50 50 VGE =19V VGE =17V VGE =15V VGE =13V VGE =11V VGE = 9V VGE =15V 40 Tj =25°C 30 IC (A) IC (A) 40 20 TJ =125°C 20 Tj =125°C 10 0 0 30 10 0.5 1.0 1.5 2.0 VCE˄V˅ 2.5 3.0 0 3.5 Figure 3: T ypical Transfer Characteristics for IGBT Inverter 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCE˄V˅ Figure 4: Switching Energy vs. Gate Resistor for IGBT Inverter 50 5 VCE=600V IC=25A VGE=±15V Tj =125°C VCE =20V 40 4 Eon Eoff (mJ) IC (A) Tj =25°C 30 Tj =125°C 20 5 6 7 9 8 VGE˄V˅ 10 11 10 8 Eoff VCE=600V RG=36Ω VGE=±15V Tj =125°C 20 30 40 RG˄Ω˅ 50 60 70 40 Eon Eoff 4 30 20 RG=36Ω VGE=±15V Tj =125°C 10 2 10 10 50 6 0 0 0 Figure 6: Reverse Biased Safe Operating Area for IGBT Inverter IC (A) Eon Eoff (mJ) 2 0 12 Figure 5: Switching Energy vs. Collector Current for IGBT Inverter MG1225H-XN2MM 3 1 10 0 Eon 20 30 IC˄A˅ 40 0 50 3 183 0 200 400 600 800 1000 1200 1400 VCE˄V˅ ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:11/20/14 Power Module 1200V 25A IGBT Module Figure 7: Diode Forward Characteristics for Diode Inverter Figure 8: Switching Energy vs. Gate Resistort for Diode Inverter 3.0 50 IF=25A VCE=600V Tj =125°C 2.5 Erec (mJ) 40 IF (A) 30 20 0.5 Tj =25°C 0 0 1.0 0.5 2.0 1.5 VF˄V˅ 2.5 3.0 3.0 2.5 0 10 20 30 40 50 60 70 RG˄Ω˅ Figure 9: Switching Energy vs. Forward Current Diode-inverter Figure 10: Transient Thermal Impedance of Diode and IGBT-inverter 10 RG=36Ω VCE=600V Tj =125°C Diode 1 2.0 Erec (mJ) 1.5 1.0 Tj =125°C 10 0 2.0 IGBT 1.5 1.0 0.1 TJ =150°C TC =25°C VGE =15V tscİ10µs 0.5 0 0 10 20 30 40 0.01 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (seconds) 50 IF (A) Figure 11: NTC Characteristics 100000 10000 R 1000 100 0 MG1225H-XN2MM 20 40 80 100 120 140 160 60 TC˄°C˅ 4 184 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:11/20/14 Power Module 1200V 25A IGBT Module Circuit Diagram Dimensions-Package H The foot pins are in gold / nickel coating Packing Options Part Number Marking Weight Packing Mode M.O.Q MG1225H-XN2MM MG1225H-XN2MM 180g Bulk Pack 40 Part Marking System Part Numbering System MG12 25 H - X N2 MM PRODUCT TYPE M: Power Module MODULE TYPE G: IGBT VOLTAGE RATING 12: 1200V CURRENT RATING ASSEMBLY SITE WAFER TYPE MG1225H-XN2MM CIRCUIT TYPE LOT NUMBER Space reserved for QR code PACKAGE TYPE 25: 25A MG1225H-XN2MM 5 185 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:11/20/14