BC546/BC547/BC548(NPN)

BC546/BC547/BC548(NPN)
TO-92 Bipolar Transistors
TO-92
1. COLLECTOR
2. BASE
3. EMITTER
Features
High Voltage
Complement to BC556,BC557,BC558
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
VCBO
Value
BC546
BC547
BC548
80
50
30
BC546
BC547
BC548
65
45
30
V
6
V
Collector-Emitter Voltage
VCEO
VEBO
Units
Emitter-Base Voltage
V
Dimensions in inches and (millimeters)
IC
Collector Current -Continuous
100
mA
PD
Total Device Dissipation
625
mW
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
conditions
MIN
MAX
UNIT
BC546
BC547
BC548
VCBO
IC= 100μA , IE=0
80
50
30
V
BC546
BC547
BC548
VCEO
IC= 1mA , IB=0
65
45
30
V
VEBO
IE= 10μA, IC=0
6
V
Emitter-base breakdown voltage
Collector cut-off current
Test
BC546
BC547
BC548
BC546
BC547
BC548
BC546
BC547
BC548
BC546
BC547
BC548
BC546A/BC547A/BC548A
BC546B/BC547B/BC548B
BC546C/BC547C/BC548C
ICBO
ICEO
IEBO
hFE
VCB= 70V, IE=0
VCB= 50 V, IE=0
VCB= 30V, IE=0
VCE= 60 V, IB=0
VCE= 45 V, IB=0
VCE= 30 V, IB=0
VEB= 5V, IC=0
VCE=5V, IC= 2mA
110
110
110
110
200
420
0.1
μA
0.1
μA
0.1
μA
800
800
800
220
450
800
Collector-emitter saturation voltage
VCE(sat)
IC=100mA, IB= 5mA
0.3
V
Base-emitter saturation voltage
VBE(sat)
IC= 100mA, IB=5mA
1.1
V
fT
VCE= 5V, IC= 10mA
f = 100MHz
Transition frequency
150
MHz
BC546/BC547/BC548(NPN)
TO-92 Bipolar Transistors
Typical Characteristics
BC546/BC547/BC548(NPN)
TO-92 Bipolar Transistors