High Temperature Products w w w. m i c r o s s . c o m 23 June 2015 • Rev 1.7 Introduction Micross Components is a global provider of specialty semiconductor package assembly and distributed products including: • Bare die and wafers • Capacitors • Resistors • RF components • Transformers and inductors • Crystals and oscillators • Electro-mechanical products • Discretes • Multi-Chip Modules (MCMs) Micross has over 35 years’ experience in the electronics industry. The growth of the high temperature market has sparked an increase for high reliability components that can operate above 175°C. We offer a single source solution for customers who require high quality, high reliability and state-of-the-art electronic components for their applications. Our extensive line card allows Micross to support customer requirements by offering a number of components that can operate above 175°C, without compromising quality or reliability. +44 (0) 1603 788967 (EMEA & ROW) • 407.298.7100 (Americas) [email protected] • www.micross.com We offer high temperature products from the following suppliers marked “Hi-Temp.” HI -T EM P HI -T EM P HI -T EM P HI -T EM P HI -T EM P HI -T EM P HI -T EM P HI -T EM P Bare Die HI -T EM P HI -T EM P HI -T EM P HI -T EM P Passives HI -T EM P Product Line Cards Bare Die & Wafer Processing Wafer Services Wafer Sawing Capabilitity • Wafer sawing (up to 12” wafers) • Wafer probing • Wafer map creation • Wafer thinning • Die pick and place • Tape and reel • 100% visual inspection High Temperature Wafer Level Testing => 300mm - AI2O3, GaAs, GaN, InPh, Si, SiC, SOI, MEMs and more. R&D + high volume automatic and semi-automatic. Wafer Test Capability => 200mm, -55°C through 200°C temperature probing, mapping, characterisation and datalog, unlimited bins, zener zap trimming, device programming (some devices require development). • Testing of both bare die and hybrid substrates Wafer Picking Capabilty • Precision hot probing up to 200°C (higher temperatures on special request) All electronic maps interfaced. Full traceability to single die. Automated low contact high quality process plus 100% visual inspection. • Temperature accuracy ±0.5°C • Temperature stability ±0.1°C • Fully automated multiple wafer handing Wafer Bumping • Lot characterisation Au stud - min/max height 40-70μm; min pitch 75μm; min/max bump diameter 75-100μm; ±3μm panarity ± 5μm (1μm with post-coining); bump shear strength 50-75g. • Customizable output data and logging • Complete wafer mapping, selection and traceability to single die for KGD Die Analysis and Qualification Available from Micross High-temp & KGD parts with operating temperatures from -55°C to +210°C Full evaluation, destructive and environment testing and failure analysis; device characterisation -70° to 350°C; qualification performed to MIL-STDs, ESA, customer SCDs and more. +44 (0) 1603 788967 (EMEA & ROW) • 407.298.7100 (Americas) [email protected] • www.micross.com Silicon Carbide | USCi Working with USCi, we are able to offer a wide variety of SiC products sutiable for an extensive range of applications. High Temp SiC Products • SBDs (Schottky Barrier Diodes) • JFETs (Junction Field Effect Transistors) Benefits SBDs • Virtually zero diode switching losses • No effect from junction temperature • Improves stability • Reduction in active switch turn-on losses • High switching speed capability JFETs • Higher switching speeds with lower loss • Low device capacitance • Limited increase in Rds(on) over temp • Stable high voltage operation • Smaller magnetics, reduced thermal requirements, and reduced output caps Device Ranges • SBDs: 650V to 1200V • JFETs: 1200V, 21A-38A Applications Solar (PV) Inverter Green Power Generation Hi-Rel / Mil-Aero Motor Control Solid States Disconnect Devices Oil & Energy Exploration Power Supplies Silicon Carbide | Genesic Leading global manufacturers of industrial and defense systems depend on GeneSiC’s technology to increase the performance and efficiency of their products. High Temp SiC Bare Die Products • SBDs (Schottky Barrier Diodes) • SJTs (Super Junction FETs) • Thyristors • PiN Rectifiers Benefits SiC Schottky Die • Higher switching frequencies • No reverse recovery charge = less heat and low switching losses • No safety margins necessary for startup and cycle drop out operations • Cool operation during transient thermal load steps • Improved light load efficiency by significantly reduced device capacitances • Break down voltages >1700V SJTs Sic Discretes Benefit Industry Down Hole Avionics Switched Power Hybrid Electric Vehicles Space Hi-Temperature Power Efficiency Compact Size Ruggedness • Higher current rating as compared to competing SiC switch technologies Radiation Resistant • Higher switching frequency than power MOSFETs • Higher current at high temperatures • Inherently superior high temperature capability and reliability due to independence from SiC MOS issues. +44 (0) 1603 788967 (EMEA & ROW) • 407.298.7100 (Americas) [email protected] • www.micross.com Micross Silicon Carbide (SiC) Product Selection Guide SiC for your Military, Aerospace & Down-Hole Applications • Extreme performance • Operation beyond Mil temp • Elevated temp range, -55°C to +210°C • Naturally radiation tolerant • More efficient than Silicon, GaAs • Lower conduction and switching loss • Faster switching frequencies • Higher thermal performance • Screened in accordance with MIL-PRF-19500 • Metal / ceramic hermetic packaging • Through-hole & surface mount options • Smaller surface mount diode in development • Custom packaging on request SiC Device Nomenclature Micross Prefix Device Type SiC Schottky Diodes Voltage M YX DS Package Isolating Ceramic AB S Current 120 0 -15 • 600V and 1200V blocking voltage • 3 to 15 amps IF • Zero reverse & zero forward recovery Device Type Code Device Type Package Code Plating Pins Body DS DB Diode Diode D3 J1 J0 MN MP Eyelet Schottky 2-Phase Bridge AA AB Ni Ni 3 3 TO-257 TO-257 Ceramic Ceramic Diode 3-Phase Bridge AC Ni 2 TO-257 JFET JFET Normally On Normally Off BA CA Ni Ni 3 3 TO-254 TO-258 MOSFET N Channel MOSFET P Channel CE DA Ni Au M2 MOSFET 2 Die N Type EA MH BN MOSFET Half Bridge BJT N Channel FA GA BP BJT P Channel B2 BJT 2 Die P Type S0 SJT Normally On S1 SJT Normally Off Notes: Lid Isolating Ceramic Code Desc • High frequency operation Flat Domed O B None Be0 • High speed low-loss switching Ceramic Domed S Be0 free Ceramic Ceramic Flat Flat 5 3 TO-258 Ceramic SMD 0.5 - Flat Flat Au 3 SMD 1 - Flat Au Ni 3 6 SMD 2 TO-259 Ceramic Flat Flat 1. Current values are in amps and voltage in volts 2. Current values are rated as absolute max. values SiC FETs & Transistors • 1200V breakdown voltages • Low on resistance, 40mΩ to 180mΩ typical at 25°C • Switching times in ns • No tail current • Low gate charge 3. Character “-” used to separate numerical values 4. Character “P” to indicate decimal point • Positive temp coefficient Single SiC Power Schottky Diode Part # Voltage (V) Absolute Max Current (A) MYXDS0600-03AAS Package Style BeO Free Temp. Elevated / Extreme 3 MYXDS0600-05AAS 600 5 MYXDS0600-10AAS 10 MYXDS1200-03ABS 3 MYXDS1200-05ABS 5 1200 MYXDS1200-10ABS TO-257 Flat LID TO-257 Domed LID 10 MYXDS1200-15ABS Yes 210°C 15 MYXDS0600-03DA0 3 MYXDS0600-05DA0 600 5 MYXDS0600-10DA0 SMD 0.5 10 SiC Power Schottky Rectifier / Diode Bridge Part # AC Inputs MYXDB0600-10CEN Voltage (V) Absolute Max Current (A) Package Style 10 TO-258 5 PIN Voltage (V) Absolute Max Current (A) Package Style SMD 0.5 Yes TO-258 No Dual Phase MYXDB0650-10CEN MYXD30650-10CEN 650 600 Three Phase MYXD30650-10CEN BeO Free Temp. Elevated / Extreme 600 Yes 210°C 650 Single SiC Power MOSFETs Part # MYXMN0600-20DA0 600 20 MYXMN1200-20CAB 1200 20 MYXMN1200-40CAB 1200 40 BeO Free Temp. Elevated / Extreme 210°C Single SiC Super Junction Tansistors Part # Voltage (V) Absolute Max Current (A) MYXS00600-15DA0 600 15 Package Style MYXS00600-07DA0 600 7 MYXS00650-15DA0 650 15 Part # Voltage (V) Absolute Max Current (A) Package Style MYXJ11000-17DA0 1000 17 SMD 0.5 MYXJ11200-17ABB 17 TO-257 Domed MYXJ11200-17BAB 17 TO-254 SMD 0.5 BeO Free Temp. Elevated / Extreme Yes 210°C Single SiC Power JFETs 1200 MYXJ11200-17CAB 17 MYXJ11200-34CAB BeO Free Temp. Elevated / Extreme Yes 175°C No TO-258 34 SiC Power Transistors Dual & Half Bridges Part # Device Type MYXMH0600-20CEN MOSFET Half Bridge 600 MYXM21200-20GAB MOSFET Double 1200 MYXB21200-20GAB JFET Double 1200 Satellite Solar Inverters Voltage (V) Absolute Max Current (A) Down-Hole Compressors 2 x 20A Package Style BeO Free Temp. Elevated / Extreme TO-258, 5 pin Yes TO-259 No Jet Engine Controls 210°C 175°C MIL-SPEC Power Supplies +44 (0) 1603 788967 (EMEA & ROW) • 407.298.7100 (Americas) [email protected] • www.micross.com High Temperature Resistors These thin film resistors are specially developed for applications that require high reliability, precision, low noise and low profile demands. Both the SMD and wire bondable components are suitable for any hybrid, MCM or SiP application. Silicon Chip Resistors -55°C to +250°C • DC power rating 250mW • Small size from 0.02” sq • Centre-tapped from 0.03” sq • Tolerance from ± 0.1% • TCR from ± 25ppm/°C • Self passivating TaN film • Oxidised Si substrate • Moisture resistant • Au terminations available Surface Mount Resistors -55°C to 215°C • TCR of ± 5ppm/°C standard • Tolerances to ± 0.02% • Anti-corrosive resistant film • Stable film and performance levels • 0.5% max @ 2K hrs, 215°C 25% rated • Au terminations • Working voltage up to 200V • Resistance range from 250Ω to 3MΩ Applications Oil/gas exploration Automotive Aerospace engine control High temperature applications High Temperature Silicon Capacitors Micross is pleased to offer silicon capacitors that demand extreme operating temperature ranges up to 250°C. Applications • Motor controllers Parameters Value Capacitance range 1pF to 1µF Operating temperature -55°C to 250°C Temperature coefficient ±1% from -55°C to 200°C Equivalent Serial Inductor (ESL) max 100pH Equivalent Serial Resistor (ESR) max 400 mΩ Insulation resistance 60 GΩ min, RVDC from -55 to +150°C Capacitor height Max 250µF • Power inverters • Pulsed power • Power electronics • Deep well oil exporation • Automotive electronics Size & Cap Value Size & Cap Value Size & Cap Value 1005 1.5nF 0402 220pF 0402 10nF 0201 10nF 0402 330pF 0402 15nF 0402 1pF-10pF 0402 470pF 0402 22nF 0402 15pF 0402 680pF 0402 33nF 0402 22pF 0402 1nF 0402 47nF 0402 33pF 0402 1.5nF 0603 100nF 0402 47pF 0402 2.2nF 0805 100nF 0402 68pF 0402 3.3nF 1206 100nF 0402 100pF 0402 4.7nF 1206 470nF 0402 150pF 0402 6.8nF 1206 1uF Key Features High stability High insulation resistance Ultra low ESR and ESL Low profile +44 (0) 1603 788967 (EMEA & ROW) • 407.298.7100 (Americas) [email protected] • www.micross.com High Temperature, High Voltage Capacitors Micross Components can offer high temperature capacitors in both SMT and leaded formats. 200°C High Temperature – Class I & II • Operating temp –55°C to +200°C • Voltage rating 25V to 4kV • C0G and class II dielectric • Sizes 1805 to 7565 High Temperature Radial Lead Epoxy Coated • Operating temperature from -55°C to 200°C • Voltage rating 25V to 4kV • C0G and class II dielectric • Tolerances ±1%*, ±2%*, ±5%, ±10%, ±20% (*C0G only) • Sizes 1515 to 7565 High Temperature Radial Leaded Encapsulated • Operating temperature from -55°C to 200°C • Voltage rating 25V to 500V • C0G and class II dielectric • Tolerances ±1%*, ±2%*, ±5%, ±10%, ±20% (*C0G only) • Sizes 1515 to 7565 Class I Class II Temp Coefficient 0 ±30ppm/°C @ 200°C +15 -65 ΔC Max @ 200°C Dissipation Factor 25°C; 0.001 (0.1%) Max 25°C; 0.25 (2.5%) Max Aging Rate 0% per decade 2% per decade Testing Parameters 1KHz, 1.0 ±0.2 VRMS, 25°C 1MHz for capacitance <100pF Harsh Environments • Oil & Energy Exploration • Geothermal • Military & Aerospace These unique high temp capacitors have an operating voltage up to 3kV. Their specially formulated Ni-barrier terminations have been designed to enhance the mechanical performance of SMD chips in harsh environments and automotive applications. Key Characteristics • Operating temperature: -55°C to +150°C • Capacitance range: 270pF to 1.8μF • Temp coefficient: ±15% over temp • Dissipation factor: < 0.025 • Insulation resistance: 100GΩ or 1000s • Aging rate: 1% per decade 0805 1206 1210 1808 1812 2220 2225 Min. Cap Value 680pF 270pF 680pf 390pF 1.0nF 2.7nF 3.9nF 25V 56nF 180pF 330nF 470nF 680nF 1.5µF 1.8µF 50V 33nF 120nF 220nF 270nF 470nF 680nF 1.0µF 100V 15nF 56nF 120nF 150nF 220nF 470nF 560nF 200/250V 10nF 33nF 58nF 82nF 120nF 220nF 330nF 500V 3.9nF 18nF 39nF 47nF 100nF 180nF 270nF 630V 1.8nF 3.9nF 10nF 12nF 33nF 150nF 180nF 1kV 1.0nF 2.2nF 4.7nF 5.6nF 18nF 39nF 56nF 1.2kV 1.8nF 3.9nF 4.7nF 12nF 33nF 39nF 1.5kV 1.2nF 2.2nF 2.7nF 8.2nF 22nF 27nF 2kV 470nF 1.2nF 1.8nF 4.7nF 12nF 18nF 2.5kV 1.0nF 2.7nF 6.8nF 10nF 3kV 680nF 2.2nF 4.7nF 5.6nF +44 (0) 1603 788967 (EMEA & ROW) • 407.298.7100 (Americas) [email protected] • www.micross.com High Temperature Transformers & Inductors NASCENTechnology has developed a unique LTCC (Low Temperature, Co-Fired Ceramic) technology that combines magnetic material and transformer winding packing into one integrated unit. Operational in excess of 300°C, these transformers and inductors feature low profile, rugged and self-shielding characteristics. Transformers • Low profile, small sizes • Light weight • SMD with side terminations • Operating temperature: 250°C • Switching frequency to 300KHz • Thermal resistance: 110°C/W • Volt-time product: 100V-µs • Dielectric rating: 1500VAC, 1s • Excellent substitute for wire-wound transformers • Embeds coil windings within one solid unit - a minature monolith Inductors • Low profile, small sizes • Light weight • Hermetically sealed • Operating temperature: 300°C • RoHS compliant • Resistance to extreme shock and vibration • Excellent substitute for wire-wound inductors Biomedical Aerospace & Defense Downhole / Geothermal Transportation High Temperature Crystals & Oscillators An increasing number of applications require the use of high-temperature crystals and oscillators. Micross Components, in partnership with Euroquartz, is pleased to offer a range of oscillators (CXOHT, CXOMKHT, CXOXOHT, HTXO, HGXOHT, LHTAT and SQXO2ATHG) ideal for your application. Available in SMD and Through-Hole configurations, Euroquartz crystals and oscillators are the perfect solution for your frequency application. Product Features • Typical operating life • Beyond 7k hrs @ 250°C • Beyond 10k hrs @ 225°C • Beyond 17k hrs @ 200°C • Extended temp. range: -55°C to over +250°C • Severe & cumulative shock survivability • Through-hole & SMD options • Excellent long-term aging • Low power consumption Example Components Available Through-Hole Oscillators Family Operating Temp Frequency Range LHTAT -55°C to +200°C SQXO2ATHG -55°C to +200°C 320 kHz to 50 MHz 32.768 kHz 1 MHz to 50 MHz 32.768 kHz Supply Voltage (V) Calibration Tolerances (typ) Output Load (CMOS) 3.3 ±50ppm 15pF 2.5, 3.3 & 5 ±100ppm 15pF Start-up Time (MAX) 5ms 0.8ms 5ms Shock Survival up to 30,000g 0.5ms, 1/2 sine up to 8,000g 0.3ms, 1/2 sine SMD Crystals Family CX1HT CX4HT Operating Temp -55°C to +225°C CX1VHT -55°C to +200°C CX4VHT +25°C to +260°C Frequency Range Calibration Tolerances (typ) 6 mHz to 50 MHz 14 mHz to 50 MHz 32.768 kHz Drive Level Load (MAX) Capacitance 500µW 10pF 0.5µW 9pF ±100ppm (25°C) Shock Survival Vibration Survival up to 1,000g 1ms, 1/2 sine up to 5,000g, 0.3ms, 1/2 sine up to 1,000g, 1ms, 1/2 sine 20g, 10 to 2,000Hz swept sine up to 5,000g, 0.3ms, 1/2 sine +44 (0) 1603 788967 (EMEA & ROW) • 407.298.7100 (Americas) [email protected] • www.micross.com Stepped Lids & Lead Frames In partnership with leading manufacturer Tecan, Micross Components can offer stepped lids and precision metal parts manufactured by PCM (Chemical Machining) and PEF (Electroforming) techniques. Stepped Lids • High precision • Burr and stress free in virtually any metal • Low costs • Prototype quantities available • Ultra-fine tolerances and features • Customer design • Fast turn-around • Available tagged, de-tagged or witness mark free to provide uniformity for accurate wire bonding and hermetic sealing Lead Frames Lead frames are used where high precision attachment is required between the substrate and chip bond pads. The encapsulated parts are completely moulded, the frame is machanically removed and the package is complete. • High precision • Burr and stress Free • Low cost photo tooling • Prototype quantities available Metal Finishes Kovar Stainless steel Alloy 42 • Ultra-fine pitch designs Diver-P Olin 194 Copper alloys • Custom design Aluminum Nickel alloys • Fast turn-around Contact Micross EMEA & ROW 2 Hellesdon Park Road Drayton High Road Norwich, Norfolk NR6 5DR +44 (0) 1603 788967 [email protected] Americas 7725 N. Orlando Blossom Trail Orlando, Florida 32810 407.298.7100 [email protected] About Micross Micross Components is a leading global provider of distributed and specialty electronic components for military, space, medical, and demanding industrial applications. Operating as a single source for high reliability and state-of-the-art electronics, Micross’ solutions range from bare die and wafer processing to advanced and custom packaging to component modifications and related interconnect offerings. With a 35+ year heritage, Micross possesses the design, manufacturing and logistics expertise needed to support an application from start to finish. Learn more at www.micross.com +44 (0) 1603 788967 (EMEA & ROW) • 407.298.7100 (Americas) [email protected] • www.micross.com Micross Components High Temperature Products +44 (0) 1603 788967 (EMEA & ROW) • 407.298.7100 (Americas) [email protected] • www.micross.com