7525 ethel avenue north hollywood, ca 91605 (818) 982

REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200
Specifications are subject to change without notice.
WWW.ADSEMI.COM
H V V0912-150 H igh Voltage, H igh Ruggedness
L-Band Avionics Pulsed Power Transistor
960-1215 MHz, 10µs Pulse, 10% Duty Cycle
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For Ground and Air DME, TCAS and I F F Applications
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The innovative Semiconductor Company!
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ABSOLUTE MAXIMUM RATING (IEC 134)
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The HVV0912-150 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR at
rated output power and nominal operating voltage across the frequency band of operation.
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ELECTRICAL CHARACTERISTICS
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PULSE CHARACTERISTICS
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Notes:
1) Rated at TCASE = 25°C
2) All parameters measured under pulsed conditions at 150W output power measured at the 10% point of the pulse with pulse width = 10µsec,
duty cycle = 10% and VDD = 50V, IDQ = 100mA in a broadband matched test fixture.
3) Amount of gate voltage required to attain nominal quiescent current.
4) Guaranteed by design.
HVVi Semiconductors, Inc.
10235 S. 51st St. Suite 100
Phoenix, Az. 85044
ISO 9001:2000 Certified
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com
© 2009 HVVi Semiconductors, Inc. All Rights Reserved.
EG-01-DS11C
07/19/10
2
The innovative Semiconductor Company!
H V V0912-150 H igh Voltage, H igh Ruggedness
L-Band Avionics Pulsed Power Transistor
960-1215 MHz, 10µs Pulse, 10% Duty Cycle
For Ground and Air DME, TCAS and I F F Applications
!
Typical device performance under Class AB mode of operation and RF pulse conditions of 10µs pulse width and
10% duty cycle with VDD = 50V and IDQ = 100mA. The device was measured at 1215MHz.
!!!!!!!!!!!!
Typical device performance under Class AB mode of operation and RF pulse conditions of 10µs pulse width and
10% duty cycle with VDD = 50V and IDQ = 100mA. The device was measured at 1215MHz.
HVVi Semiconductors, Inc.
10235 S. 51st St. Suite 100
Phoenix, Az. 85044
ISO 9001:2000 Certified
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com
© 2009 HVVi Semiconductors, Inc. All Rights Reserved.
EG-01-DS11C
07/19/10
3
The innovative Semiconductor Company!
H V V0912-150 H igh Voltage, H igh Ruggedness
L-Band Avionics Pulsed Power Transistor
960-1215 MHz, 10µs Pulse, 10% Duty Cycle
!
For Ground and Air DME, TCAS and I F F Applications
!
!!!!!!!
!
Typical device performance under Class AB mode of operation and RF pulse conditions of 10µs pulse width and
10% duty cycle with VDD = 50V and IDQ = 100mA. The device was measured at 150W.
!!
!!!!!!!!
!!!!!!!!!!!!!
Typical device performance under Class AB mode of operation and RF pulse conditions of 10µs pulse width and
10% duty cycle with VDD = 50V and IDQ = 100mA. The device was measured at 150W.
HVVi Semiconductors, Inc.
10235 S. 51st St. Suite 100
Phoenix, Az. 85044
ISO 9001:2000 Certified
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com
© 2009 HVVi Semiconductors, Inc. All Rights Reserved.
EG-01-DS11C
07/19/10
4
The innovative Semiconductor Company!
H V V0912-150 H igh Voltage, H igh Ruggedness
L-Band Avionics Pulsed Power Transistor
960-1215 MHz, 10µs Pulse, 10% Duty Cycle
For Ground and Air DME, TCAS and I F F Applications
Typical device performance under Class AB mode of operation at 1215MHz and RF pulse conditions of 10µs
pulse width and 10% duty cycle with VDD = 50V and IDQ = 100mA. The high voltage silicon vertical technology
shows less than 2dB of power degradation over an extreme case teperature rise of 125°C.
Measured at P1dB Compression Point
TEMP
Gain (dB) Power (W) Power (dBm)
-40C
22.5
188
52.7
0C
20.3
212
53.3
25C
19.8
193
52.9
85C
17.7
148
51.7
!
HVV0912-150 Performance over Temperature
HVVi Semiconductors, Inc.
10235 S. 51st St. Suite 100
Phoenix, Az. 85044
ISO 9001:2000 Certified
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com
© 2009 HVVi Semiconductors, Inc. All Rights Reserved.
EG-01-DS11C
07/19/10
5
The innovative Semiconductor Company!
H V V0912-150 H igh Voltage, H igh Ruggedness
L-Band Avionics Pulsed Power Transistor
960-1215 MHz, 10µs Pulse, 10% Duty Cycle
! For Ground and Air DME, TCAS and I F F Applications
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
Zo = 10 ȍ
ZIN*
1215Hz
1215Hz
ZOUT *
Test Circuit Impedances
Frequency
Zin* (ohms)
Zout* (ohms)
960MHz
2.1-j5.0
3.3-j6.8
1025MHz
1.9-j4.1
3.0-j5.7
1088MHz
1.7-j3.3
2.7-j4.9
1150MHz
1.6-j2.5
2.6-j4.0
1215MHz
1.5-j1.7
2.5-j3.3
Zin*
HVVi Semiconductors, Inc.
10235 S. 51st St. Suite 100
Phoenix, Az. 85044
Zout*
Input
Output
Impedance
Matching Network
Impedance
Matching Network
ISO 9001:2000 Certified
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com
© 2009 HVVi Semiconductors, Inc. All Rights Reserved.
EG-01-DS11C
07/19/10
6
PACKAGE DIMENSIONS
DRAIN
GATE
ASI
PART NUMBER
JDATE CODE
inches
mm
SOURCE
Note: Drawing is not actual size.
ASI Semiconductor, Inc. (ASI) reserves the right to make changes to information published in this
document at any time and without notice. This document supersedes and replaces all information
supplied prior to the publication hereof. Information in this document is believed to be accurate and
reliable. However, ASI does not give any representations or warranties, either express or implied, as
to the accuracy or completeness of such information and shall have no liability no liability for conse-quences resulting from the use of such information. No license, either expressed or implied, is conveyed
under any ASI intellectual property rights, including any patent rights.