1N60 Series

1N60 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
N-Channel Power MOSFET
(1.2A, 600Volts)
DESCRIPTION
The Nell 1N60 is a three-terminal silicon
device with current conduction capability
of 1.2A, fast switching speed, low on-state
resistance, breakdown voltage rating of 600V,
and max. threshold voltage of 4 volts.
They are designed for use in applications such
as switched mode power supplies, DC to DC
converters, PWM motor controls, bridge circuits
and general purpose switching applications.
D
D
G
S
G
D
S
TO-251 (I-PAK)
(1N60F)
FEATURES
TO-252 (D-PAK)
(1N60G)
D
RDS(ON) = [email protected] = 10V
Ultra low gate charge(6nC max.)
Low reverse transfer capacitance
(C RSS = 3pF typical)
G
D
Fast switching capability
100% avalanche energy specified
GD
S
TO-220AB
(1 N60A )
Improved dv/dt capability
150°C operation temperature
S
TO-220F
(1N60AF)
D (Drain)
PRODUCT SUMMARY
G
ID (A)
1.2
VDSS (V)
600
RDS(ON) (Ω)
1.15 @ V GS = 10V
QG(nC) max.
6
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Page 1 of 8
D
S
TO-92
(1 N60E )
G
(Gate)
S (Source)
1N60 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
TEST CONDITIONS
PARAMETER
VALUE
VDSS
Drain to Source voltage
T J =25°C to 150°C
600
V DGR
Drain to Gate voltage
R GS =20KΩ
600
V GS
ID
UNIT
V
±30
Gate to Source voltage
T C =25°C
1.2
Continuous Drain Current
T C =100°C
0.74
A
I DM
Pulsed Drain current(Note 1)
4.8
I AR
Avalanche current(Note 1 )
1.2
E AR
Repetitive avalanche energy(Note 1 )
I AR =1A, R GS =50Ω, V GS =10V
E AS
Single pulse avalanche energy (Note 2 )
I AS =1A, L = 60mH
dv/dt
Peak diode recovery dv/dt(Note 3)
4
mJ
50
TO-251/ TO-252
PD
28
T C =25°C TO-220AB
Total power dissipation
40
W
TO-220F
21
T A =25°C TO-92
TJ
T STG
TL
V /ns
4.5
1
Operation junction temperature
-55 to 150
Storage temperature
-55 to 150
Maximum soldering temperature, for 10 seconds
1.6mm from case
Mounting torque, #6-32 or M3 screw
For TO-220AB / TO-220F
ºC
300
10 (1.1)
lbf . in (N . m)
Note: 1. Repetitive rating: pulse width limited by junction temperature.
2 . I AS = 1 A, V DD = 50V, L = 60mH, R GS = 25Ω, starting T J =25°C.
3 . I SD ≤ 1.2 A, di/dt ≤ 200 A/µs, V DD ≤ V (BR)DSS , starting T J =25°C.
THERMAL RESISTANCE
SYMBOL
Rth(j-c)
PARAMETER
Min.
Thermal resistance, junction to case
Max.
TO-251/ TO-252
4.5
TO-220AB
3.1
TO-220F
Rth(j-a)
Typ.
6
TO-251/TO-252
110
TO-220AB
62.5
TO-220F
62.5
TO-92
140
Thermal resistance, junction to ambient
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UNIT
ºC/W
1N60 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
TEST CONDITIONS
PARAMETER
Min.
Typ.
Max.
UNIT
OFF CHARACTERISTICS
V(BR)DSS
▲V (BR)DSS/▲T J
I DSS
Drain to source breakdown voltage
I D = 250µA, V GS = 0V
Breakdown voltage temperature coefficient
I D = 250µA, V DS = V GS
Drain to source leakage current
600
V
0.4
V/ºC
V DS =600V, V GS =0V
T C = 25°C
10
V DS =480V, V GS =0V
T C =125°C
100
μA
Gate to source forward leakage current
V GS = 30V, V DS = 0V
100
Gate to source reverse leakage current
V GS = -30V, V DS = 0V
-100
I GSS
nA
ON CHARACTERISTICS
R DS(ON)
Static drain to source on-state resistance
I D = 0.6A, V GS = 10V
V GS(TH)
Gate threshold voltage
V GS =V DS , I D =250μA
9.5
2.0
11.5
Ω
4.0
V
DYNAMIC CHARACTERISTICS
C ISS
Input capacitance
C OSS
Output capacitance
C RSS
Reverse transfer capacitance
V DS = 25V, V GS = 0V, f =1MHz
120
150
20
25
3.0
4.0
5
20
25
60
7
25
25
60
5.0
6.0
pF
SWITCHING CHARACTERISTICS
t d(ON)
tr
t d(OFF)
tf
QG
Turn-on delay time
Rise time
Turn-off delay time
V DD = 300V, V GS = 10V,
I D = 1.2A, R GS = 50Ω (Note 1, 2)
Fall time
Total gate charge
Q GS
Gate to source charge
Q GD
Gate to drain charge (Miller charge)
V DD = 480V, V GS = 10V, I D = 1.2A
(Note 1, 2)
1.0
ns
nC
2.5
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
VSD
Is (Is D )
PARAMETER
TEST CONDITIONS
Min.
Typ.
Max.
UNIT
V
Diode forward voltage
I SD = 1.2A, V GS = 0V
1.4
Continuous source to drain current
Integral reverse P-N junction
diode in the MOSFET
1.2
D (Drain)
I SM
Pulsed source current
4.8
A
G
(Gate)
S (Source)
t rr
Reverse recovery time
Q rr
Reverse recovery charge
I SD = 1.2A, V GS = 0V,
dI F /dt = 100A/µs
Note: 1. Pulse test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
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Page 3 of 8
160
ns
0.3
μC
1N60 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
ORDERING INFORMATION SCHEME
1
N 60
A
Current rating, ID
1 = 1.2A
MOSFET series
N = N-Channel
Voltage rating, VDS
60 = 600V
Package type
A = TO-220AB
AF = TO-220F
E = TO-92
F = TO-251(I-PAK)
G = TO-252(D-PAK)
■ TEST CIRCUITS AND WAVEFORMS
Fig.1A Peak diode recovery dv/dt test circuit
D.U.T.
Fig.1B Peak diode recovery dv/dt waverforms
+
V GS
(Driver)
Period
D=
P.W.
P.W.
Period
V DS
V GS =10V
+
-
l SD
(D.U.T.)
l FM , Body Diode forward current
di/dt
L
l RM
Body Diode Reverse Current
RG
Driver
V GS
Same Type
as D.U.T.
* dv/dt controlled by R G
* l SD controlled by pulse period
* D.U.T.-Device under test
V DD
V DS
(D.U.T.)
Body Diode Recovery dv/dt
V DD
Body Diode
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Forward Voltage Drop
1N60 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
■ TEST CIRCUITS AND WAVEFORMS (Cont.)
Fig.2A Switching test circuit
Fig.2B Switching Waveforms
V DS
RL
90%
V DS
V GS
RG
V DD
D.U.T.
V GS
10%
10V
t d(ON)
t d(OFF)
tR
Pulse Width ≤ 1µs
Duty Factor ≤ 0.1%
Fig.3A Gate charge test circuit
tF
Fig.3B Gate charge waveform
V GS
Same Type as
D.U.T.
50kΩ
12V
0.2µF
QG
10V
0.3µF
V DS
Q GS
Q GD
V GS
D.U.T.
3mA
Charge
Fig.4A Unclamped lnductive switching test circuit
Fig.4B Unclamped lnductive switching
waveforms
L
V DS
BV DSS
l AS
RG
V DD
l D(t)
V DS(t)
D.U.T.
V DD
10V
tp
Time
tp
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1N60 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
■ TYPICAL CHARACTERISTICS
Fig.2 Drain-source on-state resistance
characteristics
1400
7
1200
9
Drain current, l D (A)
Drain Current, l D (A)
Fig.1 Drain current vs. Source to drain voltage
1000
800
600
400
200
V GS = 10V
l D = 0.6V
5
4
3
2
1
0
0
0
200
400
600
800
1000
0
Source to drain voltage, V SD (mV)
100
200
300
400
500
600
Drain to Source voltage, V DS (mV)
Fig.3 Drain current vs. Gate threshold voltage
Fig.4 Drain current vs. Drain-Source
breakdown voltage
300
450
400
Drain current, l D ( µ A)
Drain current, l D (µA)
250
200
150
100
50
350
300
250
200
150
100
50
0
0
0
1
2
3
0
4
Gate threshold voltage, V GS(TH) (V)
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200
400
600
800
Drain-Source breakdown voltage, BV DSS (V)
Page 6 of 8
1N60 Series
SEMICONDUCTOR
Nell High Power Products
Case Style
TO-251
(I-PAK)
6.6(0.26)
2.4(0.095)
2.2(0.086)
6.4(0.52)
1.5(0.059)
5.4(0.212)
0.62(0.024)
0.48(0.019)
1.37(0.054)
5.2(0.204)
6.2(0.244)
6(0.236)
16.3(0.641)
15.9(0.626)
1.9(0.075)
1.8(0.071)
9.4(0.37)
9(0.354)
0.85(0.033)
0.76(0.03)
0.65(0.026)
0.55(0.021)
4.6(0.181)
4.4(0.173)
0.62(0.024)
0.45(0.017)
TO-252
(D-PAK)
2.4(0.095)
2.2(0.086)
6.6(0.259)
6.4(0.251)
1.5(0.059)
5.4(0.212)
5.2(0.204)
0.62(0.024)
0.48(0.019)
1.37(0.054)
2
1
6.2(0.244)
6(0.236)
9.35(0.368)
10.1(0.397)
3
2
0.89(0.035)
0.64(0.025)
1.14(0.045)
0.76(0.030)
2.28(0.090)
0.62(0.024)
0.45(0.017)
4.57(0.180)
TO-220AB
10.54 (0.415) MAX.
9.40 (0.370)
9.14 (0.360)
4.70 (0.185)
4.44 (0.1754)
3.91 (0.154)
3.74 (0.148)
1.39 (0.055)
1.14 (0.045)
2.87 (0.113)
2.62 (0.103)
3.68 (0.145)
3.43 (0.135)
1
PIN
2
16.13 (0.635)
15.87 (0.625)
3
4.06 (0.160)
3.56 (0.140)
15.32 (0.603)
14.55 (0.573)
8.89 (0.350)
8.38 (0.330)
29.16 (1.148)
28.40 (1.118)
2.79 (0.110)
2.54 (0.100)
1.45 (0.057)
1.14 (0.045)
2.67 (0.105)
2.41 (0.095)
2.65 (0.104)
2.45 (0.096)
14.22 (0.560)
13.46 (0.530)
D (Drain)
0.90 (0.035)
0.70 (0.028)
5.20 (0.205)
4.95 (0.195)
0.56 (0.022)
0.36 (0.014)
G
(Gate)
All dimensions in millimeters(inches)
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Page 7 of 8
RoHS
RoHS
S (Source)
1N60 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Case Style
TO-92
Ø
5.20(0.205)
4.45(0.175)
5.33(0.210)
4.58(0.180)
G
D
S
0.50(0.020)
0.40(0.016)
12.70(0.500)Min.
0.50(0.020)
0.40(0.016)
0.50(0.020)
0.40(0.016)
1.40(0.055)
1.40(0.055)
1.14(0.045)
1.14(0.045)
D (Drain)
4.20(0.165)
3.20(0.126)
G
(Gate)
S (Source)
All dimensions in millimeters
TO-220F
10.6
10.4
3.4
3.1
2.8
2.6
3.7
3.2 7.1
6.7
16.0
15.8
16.4
15.4
2
1
3
10°
3.3
3.1
13.7
13.5
2.54
TYP
0.9
0.7
0.48
0.44
2.54
TYP
2.85
2.65
4.8
4.6
D (Drain)
G
(Gate)
S (Source)
All dimensions in millimeters
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Page 8 of 8