20N50 Series

20N50 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
N-Channel Power MOSFET
(20A, 500Volts)
DESCRIPTION
D
The Nell 20N50 is a three-terminal silicon
device with current conduction capability
of 20A, fast switching speed, low on-state
resistance, breakdown voltage rating of 500V,
and max. threshold voltage of 5 volts.
TO-3PB
(20N50B)
G
D
They are designed for use in applications
such as switched mode power supplies, DC
to DC converters, motor control circuits, UPS
and general purpose switching applications.
S
D (Drain)
FEATURES
G
(Gate)
RDS(ON) = [email protected] = 10V
S (Source)
Ultra low gate charge(60nC max.)
Low reverse transfer capacitance
(C RSS = 27pF typical)
PRODUCT SUMMARY
ID (A)
20
VDSS (V)
500
RDS(ON) (Ω)
0.23 @ V GS = 10V
QG(nC) max.
60
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
TEST CONDITIONS
PARAMETER
VALUE
VDSS
Drain to Source voltage
T J =25°C to 150°C
500
V DGR
Drain to Gate voltage
R GS =20KΩ
500
V GS
ID
Gate to Source voltage
UNIT
V
±30
T C =25°C
20
Continuous Drain Current
T C =100°C
12.4
A
I DM
Pulsed Drain current(Note 1)
80
I AR
Avalanche current(Note 1 )
20
E AR
Repetitive avalanche energy(Note 1 )
dv/dt
Peak diode recovery dv/dt(Note 2)
I AR =20A, R GS =50Ω, V GS =10V
25
mJ
4.6
V /ns
280 (2.3)
W(W/°C)
PD
Total power dissipation
(Derating factor above 25°C)
TJ
Operation junction temperature
-55 to 150
Storage temperature
-55 to 150
T STG
TL
T C =25°C
Maximum soldering temperature, for 10 seconds
1.6mm from case
Mounting torque, #6-32 or M3 screw
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300
10 (1.1)
Note: 1. Repetitive rating: pulse width limited by junction temperature.
2 . I SD ≤ 20 A, di/dt ≤ 200 A/µs, V DD ≤ V (BR)DSS , starting T J =25°C.
Page 1 of 7
ºC
lbf . in (N . m)
20N50 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
THERMAL RESISTANCE
SYMBOL
Rth(j-c)
Thermal resistance, junction to case
Rth(c-s)
Thermal resistance, case to heatsink
Rth(j-a)
Thermal resistance, junction to ambient
Typ.
Min.
PARAMETER
Max.
UNIT
0.44
TO-3P(B)
ºC/W
0.5
TO-3P(B)
40
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
V(BR)DSS
▲V (BR)DSS/▲T J
I DSS
PARAMETER
TEST CONDITIONS
Drain to source breakdown voltage
I D = 250µA, V GS = 0V
Breakdown voltage temperature coefficient
I D = 250µA, referenced to 25°C
Drain to source leakage current
Min.
Typ.
Max.
500
V
V/ºC
0.5
V DS =500V, V GS =0V
T C = 25°C
25
V DS =400V, V GS =0V
T C =150°C
250
μA
Gate to source forward leakage current
V GS = 30V, V DS = 0V
100
Gate to source reverse leakage current
V GS = -30V, V DS = 0V
-100
R DS(ON)
Static drain to source on-state resistance
I D = 10A, V GS = 10V
V GS(TH)
Gate threshold voltage
V GS =V DS , I D =250μA
g FS
Forward transconductance
V DS =40V, I D =10A
C ISS
Input capacitance
C OSS
Output capacitance
C RSS
Reverse transfer capacitance
27
t d(ON)
Turn-on delay time
95
200
375
760
100
210
105
220
46
60
I GSS
tr
t d(OFF)
tf
QG
UNIT
nA
Rise time
Turn-off delay time
0.20
3.0
V DS = 25V, V GS = 0V, f =1MHz
V DD = 250V, V GS = 10V, I D = 20A
R GS = 25Ω (Note 1, 2)
Total gate charge
Gate to source charge
Q GD
Gate to drain charge (Miller charge)
E AS
Single pulse avalanche energy(Note 3)
Ω
5.0
V
24.6
Fall time
Q GS
0.23
V DD = 400V, V GS = 10V, I D = 20A
(Note 1, 2)
S
2400
3120
355
465
15
pF
ns
nC
22
I AS = 20A, L=5.0mH
1110
mJ
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
VSD
Is (Is D )
PARAMETER
TEST CONDITIONS
Min.
Typ.
Max.
UNIT
V
Diode forward voltage
I SD = 20A, V GS = 0V
1.4
Continuous source to drain current
Integral reverse P-N junction
diode in the MOSFET
20
D (Drain)
A
I SM
Pulsed source current
80
G
(Gate)
S (Source)
t rr
Reverse recovery time
Q rr
Reverse recovery charge
I SD = 20A, V GS = 0V,
dI F /dt = 100A/µs
Note: 1. Pulse test: Pulse width ≤ 300 µs, duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
3. I AS =20A, V DD =50V, L=5.0mH, R GS = 25Ω, starting T J =25°C.
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Page 2 of 7
500
ns
7.2
μC
20N50 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
ORDERING INFORMATION SCHEME
20 N 50
B
Current rating, ID
20 = 20A
MOSFET series
N = N-Channel
Voltage rating, VDS
50 = 500V
Package type
B = TO-3P(B)
■ Gate charge test circuit & waveform
V GS
200μF
Qg
Same Type
as D.U.T.
50KΩ
12V
10V
300μF
V DS
V GS
Q gd
Q gs
(D.U.T)
3mA
■ RESISTIVE SWITCHING TEST CIRCUIT & WAVEFORM
V DS
RL
V DS
90%
V DD
V GS
RG
D.U.T.
V GS
10%
10V
t d(ON)
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Page 3 of 7
tr
t on
t d(OFF)
tf
t off
20N50 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
■ UNCLAMPED INDUCTIVE SWITCHING & WAVEFORMS
L
V DS
E AS =
BV DSS
1
Ll AS 2
2
BV DSS - V DD
BV DSS
lD
l AS
RG
V DD
l D (t)
D.U.T.
10V
V DD
V DS (t)
tp
Time
tP
■ PEAK DIODE RECOVERY dv/dt TEST CIRCUIT & WAVEFORMS
D.U.T.
+
V GS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
V DS
l FM , Body Diode Forward Current
l SD
(D.U.T)
I SD
L
di/dt
l RM
Body Diode Reverse Current
RG
Driver
V GS
Same Type
as DUT
* dv/dt controlled by R G
* l SD controlled by pulse period
V DD
Body Diode Recovery dv/dt
V DS
(D.U.T)
V DD
Body Diode
Forward Voltage Drop
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Page 4 of 7
RoHS
RoHS
20N50 Series
SEMICONDUCTOR
Nell High Power Products
■ TYPICAL CHARACTERISTICS
Fig.2 Transfer characteristics
10 2
V GS
Top: 15V
10V
8V
7V
6.5V
6V
10 1 Bottorm: 5.5V
Drain current, l D (A)
Drain Current, l D (A)
Fig.1 On-State characteristics
10 0
150ºC
10 1
25ºC
-55ºC
Note:
1. V DS = 40V
2. 250µs Pulse Test
Note:
1. 250µs Pulse Test
2. T C = 25°C
10 -1
10 -1
10 0
10 0
10 1
Drain-Source voltage, V DS (V)
10
12
Fig.4 Body diode forward voltage variation
vs. Source current and Temperatue
0.8
Reverse drain current, l SD (A)
Drain-Source On-Resistance, R DS(ON) (Ω)
8
Gate-Source voltage, V GS (V)
Fig.3 On-Resistance variation vs. drain
current and gate voltage
0.6
V GS = 10V
0.4
V GS = 20V
0.2
Note:
T C = 25°C
15
45
30
75
60
10 1
25ºC
Note:
1. V GS = 0V
2. 250µs Pulse Test
10 0
0.2
0.0
0
150ºC
90
Drain current, I D (A)
C iss = C gs +C gd ( C ds = shorted )
C oss = C ds +C gd
C rss = C gd
5000
Coss
4000
3000
Ciss
Note:
1. V GS = 0V
2. f = 1 MHz
2000
1000
0
10 -1
0.8
1.0
1.2
1.4
1.6
Crss
12
V DS = 100V
V DS = 250V
10
V DS = 400V
8
6
4
2
Note: l D = 20A
0
10 0
10 1
0
Drain-Source voltage, V DC (V)
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0.6
Fig.6 Gate charge characteristics
Gate-to-Source voltage,V GS (V)
6000
0.4
Source-Drain voltage, V SD (V)
Fig.5 Capacitance characteristics
Capacitance (pF)
6
4
2
10
20
30
40
Total gate charge, Q G (nC)
Page 5 of 7
50
20N50 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Fig.7 Breakdown voltage variation vs.
Temperature
Fig.8 On-Resistance variation vs.
Temperature
3.0
Drain-Source On-Resistance,
R Ds(ON) (Normalized)
Drain-Source breakdown voltage,
BV Dss (Normalized)
1.2
1.1
1.0
0.9
Note:
1. V GS = 0V
2. l D = 250μA
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
Note:
1. V GS = 10V
2. l D = 10A
0.5
0.0
-100
200
-50
Junction temperature, T j (°C)
10μs
1ms
10ms
10 1
DC
100ms
15
10
5
Note:
1. T C = 25 ° C
2. T J = 150°C
3. Sing Pulse
10 1
10 2
0
10 3
25
75
50
Drain-Source voltage, V DS (V)
100
10 0
D = 0.5
0.2
10 -1
0.1
0.05
P DM
t1
0.02
0.01
Notes:
Single pulse
10 -2
10 -5
10 -4
125
Case temperature, T J (°C)
Fig.11 Transient thermal response curve
Thermal response, Rth(j-c) (t)
200
20
Drain current, l D (A)
100μs
10 -3
t2
1. Rth(j-c) (t) = 0.44°C/W Max.
2. Duty factor, D = t1/ t 2
3. TJM - TC = PDM * Rth(j-c) (t)
10 -2
10 -1
Square wave pulse duration, t 1 (sec)
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150
25
10 2
Drain current, l D (A)
100
Fig.10 Maximum drain current vs.
Case temperature
Operation in This Area is
Limited by R DS (on)
10 -1
10 0
50
Junction temperature, T J (°C)
Fig.9 Maximum safe operating area
10 0
0
Page 6 of 7
10 0
10 1
150
20N50 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Case Style
19.9±0.3
4.0
20.0 min
4.0 max
1.8
2.0
15.6±0.4
9.6
5.0 ±0 . 2
TO-3PB
4.8±0.2
2.0±0.1
Φ3.2 ± 0,1
2
3
5.45±0.1
G
D
S
1
2
3
+0.2
1.05 -0.1
+0.2
0.65 -0.1
5.45±0.1
1.4
D (Drain)
G
(Gate)
All dimensions in millimeters(inches)
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Page 7 of 7
S (Source)