2SC2258 - Jmnic.com

JMnic
Product Specification
2SC2258
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-126 package
・High transition frequency fT
・High collector-emitter voltage VCEO
APPLICATIONS
・For high breakdown voltage general
amplification
・For video output amplification
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
250
V
VCEO
Collector- emitter voltage
Open base
250
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
0.1
A
ICM
Collector current-peak
0.15
A
1.2*1
PC
Collector power dissipation
TC=25℃
W
2
4*
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~+150
℃
Note :*1: Without heat sink
*2: With a 100 × 100 × 2 mm A1 heat sink
JMnic
Product Specification
2SC2258
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
ICER
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
100
μA
Collector cutoff current
VCE=250V;RBE=100kΩ
Emitter-base breakdown voltage
IE=0.1mA ;IC=0
Collector-emitter saturation voltage
IC=50mA ;IB=5m A
1.2
V
VBE
Base-emitter voltage
IC=40mA ; VCE=20V
1.2
V
hFE-1
DC current gain
IC=40mA ; VCE=20V
40
hFE-2
DC current gain
IC=5mA ; VCE=50V
30
COB
Output capacitance
IE=0; VCB=50V;f=1MHz
4.5
pF
fT
Transition frequency
IE=-10mA ; VCE=10V,f=200MHz
V(BR)EBO
VCEsat
2
7
V
3
100
MHz
JMnic
Product Specification
2SC2258
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
JMnic
Product Specification
2SC2258
Silicon NPN Power Transistors
4