JMnic Product Specification 2SC1755 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High breakdown voltage APPLICATIONS ・For TV chroma,video ,audio output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 0.2 A ICM Collector current-peak 0.7 A PC Collector power dissipation Ta=25℃ 1.2 W TC=25℃ 15 Tj Junction temperature 150 ℃ Tstg Storage temperature -40~150 ℃ JMnic Product Specification 2SC1755 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=50mA ;IB=5mA 2.0 V ICBO Collector cut-off current VCB=200V ;IE=0 0.1 μA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 μA hFE DC current gain IC=10mA ; VCE=10V 40 Transition frequency IC=10mA ; VCE=30V 50 Collector output capacitance f=1MHz;VCB=50V fT COB CONDITIONS hFE classifications C D E 40-80 60-120 100-200 2 MIN TYP. MAX 300 UNIT V 200 MHz 5.3 pF JMnic Product Specification 2SC1755 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 JMnic Product Specification 2SC1755 Silicon NPN Power Transistors 4