, Dna. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N5133 • LOW NOISE • -NF = 1.5 dB (TYP) @ 1.0 kHz • HIGH GAIN - - hFE = 60 (MIN), 220 (TYP) @ 1.0 mA PHYSICAL DIMENSIONS In accordance with JEDEC (TO-106) outline hFE = 50 (TYP) @ 50 /<A • BREAKDOWN VOLTAGE - - LVCEO = 18 VOLTS .222 .192 (MIN) f 240 MAX. ABSOLUTE MAXIMUM RATINGS (Note 1) Maximum Temperatures Operating Junction Temperature Storage Temperature Lead Temperature (Soldering, 10 second time limit) 125"C Maximum -55"Cto+125*C 260 °C Maximum Maximum Power Dissipation Total Dissipation at 25°C Case Temperature (Note 2) at 25 *C Ambient Temperature (Note 2) 0.5 Watt 0.2 Watt Maximum Voltages and Current VCBO Collector to Base Voltage VCEO Collector to Emitter Voltage (Note 3) VEflo Emitter to Base Voltage 20 Volts IS Volts 3.0 Volts 3 LEADS .019 DIA 016 .500 MIN. i FLAT NOTES: Alldrmm All Hldi ELECTRICAL CHARACTERISTICS (25 "C Free Air Temperature unless otherwise noted) SYMBOL DC Current Gain DC Current Gain High Frequency Current Gain (f = 20 MHz) High Frequency Current Gain (f = 20 MHz) Narrow Band Noise Figure (f = 1.0 kHz) "K UK "f. h»e NF VCE(sat) 'cBO IC60(65'C) Ccb BVCBO vCEO<sust) BVEBO VBE(on) hf. CHARACTERISTICS Collector Saturation Voltage Collector Cutoff Cucregt ' Collector Cutoff Cu/rent Collector-Base Capacitance Collector to Base Breakdown Voltage Collector to Emitter Sustaining Voltage (Notes 3 and 4) Emitter to Base Breakdown Voltage Base to Emitter On Voltage Small Signal Current Gain (f = 1.0 kHz) MIN. TYP. MAX. 60 220 1000 UNITS lc = 1.0 mA lc = 50^ 50 1.3 2.0 20 1.5 dB 0.4 50 5.0 5.0 20 18 3.0 50 Volts nA /•A PF Volts Volts 0.75 1100 TEST CONDITIONS Volts Volts VCE = 5.0V VCE = 10V lc = 50 pk VCE = 5.0 V lc = 1.0 mA VCE = 5.0V lc = 30 /iA VCE = 5.0V PWR BW = 200 Hz RS = 10 ktt lc = 1.0mA I8 = 0.1 mA IE = 0 V C B =15V IE = 0 VC8 = 15 V Vcfl = 5.0V IE-" lc = 100/iA IE = 0 lc = 3.0 mA IB = 0 IE = 10^ lc = 0 lc = 100 /<A VCE = 5.0 V VCE = 5.0 V lc = 1.0 mA •Planar is a patented Fairchild process. NOTES: (1) Thes« ratings are limiting: vilues above which the serviceability of any individual semiconductor device may be impaired. (2) These ratings give i maximum junction temperature of 125"C and junction to case thermal resistance of 200°C/Watt (derating factor of 5.0 mW/'C); junction to ambient thermal resistance of 500°C/Watt (derating factor of 2,0 mW/'C). (3) Rating refers to a high-current point where collector to emitter voltage is lowest. For more information send for Fairchild Publication APP-4/2, (4) Pulse Conditions: length = 300 /us; duty cycle = 1%. NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors