, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. RFP2N08, RFP2N10 TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs Features Description • 2A, 80V and 100V These are N-channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device Symbol • Related Literature Ordering Information PART NUMBER PACKAGE BRAND RFP2N08 TO-220AB RFP2N08 RFP2N10 TO-220AB RFP2N10 NOTE: When ordering, use entire part number. Packaging JEDEC TO-220AB DRAIN (FLANGE) NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors Absolute Maximum Ratings Tc = 25°C, Unless Otherwise Specified Drain to Source Voltage (Note 1) ............................... Drain to Gate Voltage (RGS = 1Mfl) (Note 1) Continuous Drain Current RFP2N10 UNITS 80 100 V VDGR 80 100 V ........................................ IQ 2 2 A ................................... IDM 5 5 A VGS ±20 ±20 V 25 25 W 0.2 0.2 W/°C "55 to 150 -55 to 150 °C 300 260 °C °C Pulsed Drain Current (Note 3) Gate to Source Voltage ...................... RFP2N08 VDSS ....................................... Maximum Power Dissipation .................................... Linear Derating Factor Prj .......................................... Operating and Storage Temperature ......................... Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief 334 Tj, TSTG ....................... ....................... T|_ Tpkg 300 260 . CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: = 25°Cto 125°C. Electrical Specifications Tc = 25°C, Unless Otherwise Specified PARAMETER SYMBOL MIN TYP MAX UNITS RFP2N10 100 - - V RFP2N08 80 - - V 2 - 4 V VDS = Rated BVDSS, Tc = 25°C - - 1 HA VDS = 0-8 x Rated BVDSS, Tc = 125°C - - 25 ^A VGS = ±20V, VDS = 0 - - ±100 nA ID = 2A, VGS = 10V (Figures 6, 7) - - 1.05 n ID = 2A,V GS = 10V - - 2.1 V ID = 1A, VDD = sov, RG = son, - 17 25 ns (Figures 10, 11, 12) - 30 45 ns 'd(OFF) - 30 45 ns tf - 17 25 ns - - 200 PF Drain to Source Breakdown Voltage Gate Threshold Voltage BVoss VGS(TH) Zero-Gate Voltage Drain Current IDSS Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Drain to Source On Voltage (Note 2) IGSS rDS(ON) VDS(ON) Turn-On Delay Time td(ON) Rise Time tr Turn-Off Delay Time Fall Time Input Capacitance CISS TEST CONDITIONS ID = 250nA, VGS = 0 VGS = VDS. ID = 250^A (Figure 8) VGS = 0V, VDS = 25V, f =1MHz Output Capacitance coss - - 80 PF Reverse-Transfer Capacitance CRSS - - 25 pF Thermal Resistance Junction to Case R6JC - - 5 °C/W MIN TYP Source to Drain Diode Specifications PARAMETER SYMBOL Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time VSD trr TEST CONDITIONS ISD = 2A - ISD = 2A, dlSD/dt = 50A/|is - NOTES: 2. Pulse test: pulse width < 300^3, duty cycle < 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. 100 MAX UNITS 1.4 V - ns