<^£.rni-(lonductoi iPtoaucfd, line. TELEPHONE: (973) 376-2922 20 STERN AVE. SPRINGFIELD NEW JERSEY 07081 /fl^fl IRF541, IRF542, IRF543, RF1S540, RF1S540SM 25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs Description Features • 25A and 28A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from intpnrated circuits. • rDS(ON) = 0-077U and O.IOOfi • Single Pulse Avalanche Energy Rated • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature Components to PC Boards" Ordering Information PART NUMBER PACKAGE Symbol BRAND IRF540 TO-220AB IRF540 IRF541 TO-220AB IRF541 IRF542 TO-220AB IRF542 IRF543 TO-220AB IRF543 RF1S540 TO-262AA RF1S540 RF1S540SM TO-263AB RF1S540SM Go- As JEDEC TO-220AB JEDEC TO-262AA DRAIN (FLANGE) DRAIN (FLANGE) JEDEC TO-263AB DRAIN (FLANGE) NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verity that datasheets are current before placing orders. Quality Semi-Conductors Absolute Maximum Ratings Tc = 25°C, Unless Otherwise Specified IRF540, RF1S540, RF1S540SM Drain to Source Breakdown Voltage (Note 1) Drain to Gate Voltage (RGS = 20kQ) (Note 1) Continuous Drain Current T c = 100°C Pulsed Drain Current (Note 3) Gate to Source Voltage VDS VDGR ID ID IDM VGs 1 00 Maximum Power Dissipation Dissipation Derating Factor Single Pulse Avalanche Energy Rating (Note 4) PD 150 1 230 100 28 20 110 ±20 EAS Operating and Storage Temperature Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Tj TSTG ~55 to 175 IRF541 IRF542 IRF543 UNITS 80 80 100 100 25 17 100 ±20 150 1 230 -55 to 175 80 80 25 17 100 ±20 150 1 230 -55 to 1 75 V 28 20 110 ±20 150 1 230 -55 to 175 V A A A V w w/°c mj °C 300 TL 300 300 300 °C 260 260 °C 260 260 Ipkg CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Package Body for 10s, See Techbrief 334 NOTE: = 25°CtoTj = 150°C. Electrical Specifications Tc = 25°C, Unless Otherwise Specified SYMBOL WIN TYP MAX UNITS IRF540, IRF542, RF1S540, RF1S540SM 100 - - V IRF541, IRF543 80 - - V VGS = VDS. ID = 250uA 2 - 4 V V DS = Rated BVDSS, VGS = OV - - 25 MA VDS = 0.8 x Rated BVDSs> VGS = OV Tj = 150°C - - 250 HA 28 - - A 25 - PARAMETER Drain to Source Breakdown Voltage Gate to Threshold Voltage Zero Gate Voltage Drain Current On-State Drain Current (Note 2) BVDss VGS(TH) IDSS 'D(ON) IRF540, IRF541, RF1S540, RF1S540SM TEST CONDITIONS ID = 250uA, VGS = OV (Figure 10) VDS > ^(ON) * t>S(ON) MAX.VGS = 10V (Figure 7) IRF542, IRF543 Gate to Source Leakage Current Drain to Source On Resistance (Note 2) IGSS rDS(ON) VGS = ±20V A - ±100 nA ID = 17A, VGS = 10V (Figures 8, 9) IRF540, IRF541, RF1S540, RF1S540SM - 0.060 0.077 ft IRF542, IRF543 - 0.080 0.100 ii 8.7 13 - S 15 23 ns - 70 110 ns - 40 60 ns - 50 75 ns - 38 59 nC 8 - - 21 Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain "Miller" Charge 9fs 'd(ON) tf 'd(OFF) VDS ^ 50V. ID = 17A (Figure 12) VDD = sov ID = 28A, RG = g.nj, RL = 1 vu (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature tf Q9(TOT) Qgs Qgd VGS = 10V, ID = 28A, VDS = 0.8 x Rated BV DSS> 'g(REF) = 1-5mA (Figures 14, 19, 20) Gate Charge is Essentially Independent of Operating Temperature nC nC Electrical Specifications Tc = 25°C, Unless Otherwise Specified (Continued) PARAMETER Input Capacitance SYMBOL CISS Output Capacitance coss Reverse Transfer Capacitance CRSS Internal Drain Inductance LD TEST CONDITIONS VDS = 25V, VGS = 0V, f = 1MHz (Figure 11) Measured From the Contact Screw on Tab To Center of Die Measured From the Drain Lead, 6mm (0.25in) from Package to Center of Die Internal Source Inductance LS Measured From the Source Lead, 6mm (0.25in) From Header to Source Bonding Pad MIN TYP - 1450 PF - 550 PF - 100 PF 3.5 nH 4.5 nH 7.5 nH Modified MOSFET Symbol Showing the Internal Devices Inductances •4qj5 Thermal Resistance Junction to Case Rejc Thermal Resistance Junction to Ambient RejA Free Air Operation - RejA RF1S540SM Mounted on FR-4 Board with Minimum Mounting Pad - MAX UNITS 1 °C/W - 80 °C/W - 62 °C/W TYP MAX UNITS - 28 A 110 A - 2.5 V - Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL !SD 'SDM MIN TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode > D «Jfc y C Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovery Charge VSD >s Tj = 25°C, ISD = 27A, VGS = 0V (Figure 13) »rr Tj = 25°C, ISD = 28A, dlSD/dt = 100A/(JS 70 150 300 ns QRR Tj = 25°C, ISD = 28A, dlso/dt = 100A/us 0.44 1.0 1.9 uC NOTES: 2. Pulse test: pulse width <300us, duty cycle < 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 25V, starting Tj = 25°C, L = 440uH, RG = 25H, peak IAS = 28A. (Figures 15, 16).