RFK25N18, RFK25N20 Data Sheet October 1998 25A, 180V and 200V, 0.150 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. • rDS(ON) = 0.150Ω File Number 1500.3 • 25A, 180V and 200V Symbol D Formerly developmental type TA09594. G Ordering Information PART NUMBER PACKAGE S BRAND RFK25N18 TO-204AE RFK25N18 RFK25N20 TO-204AE RFK25N20 NOTE: When ordering, use the entire part number. Packaging JEDEC TO-204AE DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 RFK25N18, RFK25N20 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFK25N18 RFK25N20 UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS 180 200 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . VDGR 180 200 V Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 25 25 A Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 60 60 A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 ±20 V Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 150 150 W Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2 1.2 W/oC Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . TL 260 260 oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. TC = 25oC, Unless Otherwise Specified Electrical Specifications PARAMETER SYMBOL MIN TYP MAX UNITS RFK25N18 180 - - V RFK25N20 200 - - V VGS = VDS, ID = 250µA 2 - 4 V VDS = Rated BVDSS, VGS = 0V - - 1 µA VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC - - 25 µA VGS = ±20V, VDS = 0V - - ±100 nA Drain to Source Breakdown Voltage Gate Threshold Voltage BVDSS VGS(TH) Zero Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS TEST CONDITIONS ID = 250µA, VGS = 0 Drain to Source On Resistance (Note 2) rDS(ON) ID = 25A, VGS = 10V (Figures 6, 7) - - 0.150 Ω Drain to Source On Voltage (Note 2) VDS(ON) ID = 25A, VGS = 10V - - 3.75 V ID ≈ 12.5A, VDD = 100V, RG = 50 , VGS = 10V RL = 8 , (Figures 10, 11, 12) - 40 80 ns - 150 225 ns td(OFF) - 300 400 ns tf - 120 200 ns - - 3500 pF - - 900 pF - - 400 pF Turn On Delay Time td(ON) Rise Time tr Turn-Off Delay Time Fall Time Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VGS = 0V, VDS = 25V f = 1MHz (Figure 9) - - 0.83 oC/W MIN TYP MAX UNITS ISD = 12.5A - - 1.4 V ISD = 4A, dISD/dt = 100A/µs - 300 - ns RθJC Thermal Resistance Junction to Case Source to Drain Diode Specifications PARAMETER SYMBOL Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time VSD trr TEST CONDITIONS NOTES: 2. Pulse test: pulse width ≤ 300µs Duty Cycle ≤ 2%. 3. Repetitive rating: pulse width is limited by maximum junction temperature. 2 RFK25N18, RFK25N20 Unless Otherwise Specified 1.2 30 1.0 25 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER Typical Performance Curves 0.8 0.6 0.4 20 15 10 5 0.2 0 0 50 100 0 25 150 50 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 100 PULSE DURATION = 80µs DUTY CYCLE ≤ 2% TC = 25oC 60 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 150 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE TC = 25oC TJ = MAX RATED ID(MAX) CONTINUOUS 75 100 125 TC, CASE TEMPERATURE (oC) 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1 VGS = 8V VGS = 20V 50 VGS = 7V VGS = 10V 40 30 VGS = 6V 20 VGS = 5V 10 VGS = 4V 0.1 1 10 100 VDS, DRAIN TO SOURCE (V) 1000 0 25 15 125oC 25oC 5 -40oC 0 7 0.16 VDS = 10V PULSE DURATION = 80µs DUTY CYCLE ≤ 2% 35 3 4 5 6 2 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. SATURATION CHARACTERISTICS rDS(ON), DRAIN TO SOURCE ON RESISTANCE (Ω) IDS(ON), DRAIN TO SOURCE CURRENT (A) FIGURE 3. FORWARD BIAS SAFE OPERATING AREA 1 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) FIGURE 5. TRANSFER CHARACTERISTICS 3 10 125oC 0.14 0.12 0.10 25oC 0.08 -40oC 0.06 0.04 0.02 0 VGS = 10V PULSE DURATION = 80µs 0 10 20 30 ID, DRAIN CURRENT (A) 40 50 FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT RFK25N18, RFK25N20 Typical Performance Curves Unless Otherwise Specified (Continued) 1.3 ID = 25A VGS = 10V PULSE DURATION = 80µs 1.2 NORMALIZED GATE THRESHOLD VOLTAGE (V) 2 1 ID = 250µA VGS = VDS 1.1 1.0 0.9 0.8 0.7 0 -50 0 50 100 150 -50 TJ, JUNCTION TEMPERATURE (oC) FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 0 50 100 TJ, JUNCTION TEMPERATURE (oC) FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE C, CAPACITANCE (pF) CISS 2000 1000 COSS CRSS 0 VDS , DRAIN TO SOURCE VOLTAGE (V) 200 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGD 3000 150 10 VDD = BVDSS VDD = BVDSS 0.75BVDSS 0.50BVDSS 0.25BVDSS 10 20 30 40 50 VDS, DRAIN TO SOURCE VOLTAGE (V) 8 6 RL = 8Ω IG(REF) = 2mA VGS = 10V 100 50 GATE SOURCE VOLTAGE 4 0.75BVDSS 0.50BVDSS 0.25BVDSS 2 DRAIN TO SOURCE VOLTAGE 0 0 150 0 I 20 G(REF) IG(ACT) t, TIME (µs) I 80 G(REF) IG(ACT) NOTE: Refer to Intersil Application Notes AN7254 and AN7260. FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 4 FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT VGS, GATE TO SOURCE VOLTAGE (V) NORMALIZED DRAIN TO SOURCE ON RESISTANCE 3 RFK25N18, RFK25N20 Test Circuits and Waveforms tON tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% + RG - VDD 10% 10% 0 DUT 90% VGS VGS 0 FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT 0.2µF 50% PULSE WIDTH 10% FIGURE 12. RESISTIVE SWITCHING WAVEFORMS VDS (ISOLATED SUPPLY) CURRENT REGULATOR 12V BATTERY 50% VDD Qg(TOT) SAME TYPE AS DUT 50kΩ Qgd 0.3µF VGS Qgs D VDS DUT G 0 Ig(REF) S 0 IG CURRENT SAMPLING RESISTOR VDS ID CURRENT SAMPLING RESISTOR FIGURE 13. GATE CHARGE TEST CIRCUIT Ig(REF) 0 FIGURE 14. GATE CHARGE WAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. 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