TELEPHONE (973) 376-2922 (212)227-6005 FAX: (973) 379-8980 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA 2N3924 2N3926 2N3927 SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS The 2N3924 is an n-p-n overlay transistor in a TO-39 metal envelope with the collector connected to the case. The2N3926 and the 2N3927 are n-p-n overlay transistors in TO-60 metal envelopes with the emitter connected to the case. The transistors are intended for v.h.f. transmitting applications. QUICK REFERENCE DATA 2N3924 2N392B Collector-emitter voltage (open base) VCEO 'CM Collector current (peak value) Total power dissipation up to Tmb = 25 °C ptot Junction temperature Ti Transition frequency \ = 100 mA; VCE = 13.5 v IC = 200 mA; V C E = 13,5 V fT R.F. performance at type number 2N3924 2N3926 2N3927 max- 2N3927 36 18 1,6 36 18 3,0 36 18 4,5 23 200 max. max. 7 11,6 200 200 > 250 250 200 V V A W °C MHz MHz 13-5 v-' f = 175 MHz PjtW) P 0 W> T7(%) <1 4 7 12 >70 >70 >80 <2 <4 MECHANICAL DATA Dimensions in mm Fig. 1a TO-39/1; collector connected to case. 2N3924 ^r W- t. 5,08 max _12.7_ min Maximum lead diameter is guaranteed only for 12,7 mm. N,l Semi-Conductors reserves the right to change lest conditions, parameter limits and package dimensions without notice. Information kimisheil by NJ Stmi-tonductors is believed to he both accurate and reliable at the tune of going to press. However NJ Scim-(. onductnts assumes no responsibility Cor any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers io venrv 'hai datiisheets ;ire uurrent before placing orders. 2N3924 2N3926 2N3927 MECHANICAL DATA (continued) Dimensions in mm Fig. 1b TO-60(2N3926and2N3927). Emitter connected to case. The top pins should not be bant. 10-32UNF Torque on nut: rnin. 0,8 Nm ( 8 kg cm) max. 1,7 Nm (17 kg cm) Diameter of clearance hole in heatsink: 4,8 mm to 5,2 mm. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) VCBO max. 36 Collector-emitter voltage 1C < 400 mA; -VBE = 1,5 V (open base); l£ < 400 mA VCEO VCEX max. max. 36 18 Emitter-base voltage (open collector) VEBO max. Collector current d.c. peak value "c 'CM max. max. 0,5 1,5 Total power dissipation up to Tmb = 25 °C Ptot max. 7 Storage temperature Junction temperature 2N3924 Tstg Tj max. 4 2N3926 V V V 2N3927 1,0 3,0 1,5 A 4,5 A 11.6 -65 to +200 200 23 W °C oc 2N3924 2N3926 2N3927 2N3924 THERMAL RESISTANCE From junction to mounting base From mounting base to heatsink j-mb Rth mb-h 25 R th e 2N3926 2N3927 15 7.5 K/W 0.6 0.6 K/W CHARACTERISTICS TJ = 25 °C unless otherwise specified Collector cut-off current IE = 0; VCB = 15 V 2N3924 2N3926 2N3927 ^BO < 100 100 ICBO < 5 5 V(BR)CBO > 36 36 36 V (BR)CEX V (BR)CEO > > 36 18 36 18 36 V 18 V V(BR)EBO > 4 4 4 V VBE VBE VBE < 1.5 < Ic = 250 mA; IB = 50 mA v CEsat < 0.75 Ic • 500 mA; IB = 100 mA VcEsat < VcEsat < IE * °: VCB • 15 V; TJ = 150 °C 250 MA 10 mA Breakdown voltages *E = 0: ^ = 25° ^A l£ up to 400 mA = i.s v: R B -33 n !) B = 0 Ic = 0; IE = 250 MA V Base-emitter voltage Ic = 250 mA; VCE = 5 V Ic = 500 mA; V C E = 5 V 1C = 1000 mA; VCE = 5 V V 1.5 < V 1.5 V Saturation voltage Ic = 1000 mA; IB = 200 mA V 0.75 V 1.0 V