<£ejnl-donauetoi ^Pioauati, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N3502 2N3503 2N3504 2N3505 MECHANICAL DATA Dimensions in mm (inches) PNP SILICON PLANAR EPITAXIAL TRANSISTORS FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR TO18 METAL PACKAGE PIN 1 - Emitter PIN 2 - Base PIN 3 - Collector APPLICATIONS: These PNP silicon planar epitaxial trasistors are designed for digital and analog applications at current levels up 0.5 amps. TO5 METAL PACKAGE PIN 1-Emitter PIN 2-Base PIN 3-Collector ABSOLUTE MAXIMUM RATINGS(TA = 25°C unless otherwise stated) Maximum Voltages VCBO VCEO VEBO Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Maximum Power Dissipation PD PD Total Dissipation @ 25°C Case Temperature Total Dissipation© 25°C Free Air Temperature Storage Temperature Operating Junction Temperature 2N3503 2N3505 -60V -60V 2N3502 2N3504 -45V -45V -5V -5V 2N3502 2N3503 2N3504 2N3505 1.3W 0.4 W 3W 0.7 W -65°C to+200°C 200°C NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to he both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verity that datasheets are current before placing orders. ELECTRICAL CHARACTERISTICS (25°C free air temperature unless otherwise stated) Test Conditions Parameter CBO _.., BVEBO .. VCEO Collector to Base Breakdown Voltage Emmiterto Base lE = o !E = 10uA lc = 0 lc = 10mA . .. IB =u Collector-Emitter Sustaining Voltage Collector Cutoff Current .,„, ICBCT } Collector Reverse VBE(sat) -45 Current DC Current Gain Collector Saturation Voltage Max. V -5 2N3503/2N3S05 -60 2N3502 / 2N3504 ^5 V 2N3503 / 2N3S05 0.07 10 VCE = -30V 1E = 0 VBE = 0 2N3S02 / 2N3504 0.05 10 VCB = -50V 2N3603 / 2N3505 10 t=150°C l c =10mA VCB = -30V 2N3502 / 2N3504 10 VCE = -10V 140 270 lc = 50mA VCE = -1.0V l c = 1.0mA VCE = -10V l c = 150mA VCE = -10V 115 160 135 200 100 150 lc=10uA VCE = -10V lc = 500mA VCE = -10V 80 120 t = -55°C VCE = -1.0V 50 70 50 100 lc = 50mA IB = 2. 5mA lc = 150mA IB = 15mA lc = 500mA IB = 50mA -0.08 lc = 50mA Cob ton Turn On Time W Turn Off Time lc = 300mA 300 MA — -0.25 -0.4 -0.5 -1.6 IB = 2.5mA -0.9 -1.0 IB = 15mA -1.0 -1.3 V V -2.0 f=100MH z IE = 0 IB1 - 30mA nA 300 -0.18 IB = 50mA VCE = -20V Unit V VBE = 0 Base Saturation Voltage l c = 150mA lc = 500mA lc = 50mA Transition Frequency VCB = -10V Output Capacitance FT 2N3502/2N3504 Typ. VCE = -50V lc = 50mA VCE(sat) -60 Breakdown Voltage ICES ripe l c =10uA Min. 2N3503 / 2N3505 IB2 ~ -30mA 2 2.50 — 4.5 8.0 30 40 65 100 pf ns