2SK3228 Silicon N Channel MOS FET High Speed Power Switching REJ03G1094-0400 Rev.4.00 May 15, 2006 Features • Low on-resistance RDS (on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 1. Gate 2. Drain (Flange) 3. Source G 1 Rev.4.00 May 15, 2006 page 1 of 7 2 3 S 2SK3228 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID (pulse) Note 1 IDR IAP Note 3 EAR Note 3 Pch Note 2 Tch Tstg Value 80 ±20 75 300 75 50 181 100 150 –55 to +150 Unit V V A A A A mJ W °C °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch ≤ 25°C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 4. Pulse test Rev.4.00 May 15, 2006 page 2 of 7 Symbol V (BR) DSS IGSS IDSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss Qg Qgs Qgd td (on) tr td (off) tf VDF trr Min 80 — — 1.0 — — 55 — — — — — — — — — — — — Typ — — — — 6.0 8.0 90 9700 1250 290 150 30 30 80 300 770 370 1.05 90 Max — ±0.1 10 2.5 7.5 12 — — — — — — — — — — — — — Unit V µA µA V mΩ mΩ S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 80 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 40 A, VGS = 10 V Note 4 ID = 40 A, VGS = 4 V Note 4 ID = 40 A, VDS = 10 V Note 4 ID = 10 V VGS = 0 f = 1 MHz VDD = 25 V VGS = 25 V ID = 75 A ID = 10 A VGS = 40 V RL = 0.75 Ω IF = 75 A, VGS = 0 IF = 75 A, VGS = 0 diF/dt = 50 A/µs 2SK3228 Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 1000 10 ID (A) 300 150 Drain Current Channel Dissipation Pch (W) 200 100 50 PW 100 DC 30 10 50 100 200 150 Case Temperature °C ) 1 3 10 30 100 VDS (V) VDS = 10 V Pulse Test 80 ID 3.7 V 60 Drain Current Drain Current t) 25 100 60 3.5 V 40 20 40 Tc = 75°C 20 25°C VGS = 3 V –25°C 0 0 0 2 4 6 8 Drain to Source Voltage 10 0 VDS (V) Pulse Test 0.4 ID = 50 A 0.3 0.2 20 A 0.1 10 A 0 0 4 8 12 Gate to Source Voltage Rev.4.00 May 15, 2006 page 3 of 7 16 20 VGS (V) 2 3 4 5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS (on) (mΩ) 0.5 1 Gate to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS (on) (V) ho (T Typical Transfer Characteristics (A) 80 s s 1S on Drain to Source Voltage Pulse Test ID (A) 10 V 5V µs Operation in this area is limited by RDS (on) Typical Output Characteristics 4V 0µ s( ati 3 Tc (°C) 100 0m c= Ta = 25°C 0.1 0.1 0.3 1 0 1m =1 er 0.3 0 Op 10 100 Pulse Test 50 20 10 VGS = 4 V 5 10 V 2 1 1 2 5 10 20 Drain Current 50 100 200 ID (A) Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS (on) (mΩ) 2SK3228 20 Pulse Test 16 10, 20 A ID = 50 A 12 VGS = 4 V 8 10, 20, 50 A 4 10 V 0 –50 0 50 100 Case Temperature 150 Tc 200 500 VDS = 10 V Pulse Test 200 100 Tc = –25°C 50 25°C 20 10 5 75°C 2 1 0.5 0.1 (°C) 10 30 100 30000 Capacitance C (pF) 500 200 100 50 di / dt = 50 A / µs VGS = 0, Ta = 25°C 20 Ciss 10000 3000 Coss 1000 Crss 300 VGS = 0 f = 1 MHz 100 0.3 1 3 10 30 0 100 10 20 30 40 50 Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics ID = 75 A 80 16 VDD = 50 V 25 V 10 V 60 12 VGS VDS 8 40 VDD = 50 V 25 V 10 V 20 80 160 Gate Charge Rev.4.00 May 15, 2006 page 4 of 7 240 4 320 Qg (nc) 0 400 1000 td(off) Switching Time t (ns) 20 100 VGS (V) Reverse Drain Current IDR (A) Gate to Source Voltage Reverse Recovery Time trr (ns) VDS (V) Drain to Source Voltage 3 Typical Capacitance vs. Drain to Source Voltage 1000 0 0 1 Drain Current ID (A) Body to Drain Diode Reverse Recovery Time 10 0.1 0.3 500 tf 200 tr td(on) 100 50 20 VGS = 10 V, VDD = 30 V PW = 5 µs, duty ≤ 1 % 10 0.1 0.3 1 3 10 Drain Current 30 ID (A) 100 2SK3228 Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 100 80 10 V 60 5V 40 VGS = 0, –5 V 20 Pulse Test 0 0 0.4 0.8 1.2 1.6 Source to Drain Voltage 2.0 200 IAP = 50 A VDD = 25 V duty < 0.1 % Rg ≥ 50 Ω 160 120 80 40 0 25 VSD (V) 50 75 100 125 150 Channel Temperature Tch (°C) Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C D=1 1 0.5 0.3 0.2 0.1 0.1 θch – c (t) = γ s (t) • θch – c θch – c = 1.25°C/W, Tc = 25°C 0.05 0.02 0.03 0.0 1 1s t ho D= PDM lse pu 0.01 10 µ PW T PW T 100 µ 10 m 1m 100 m 1 10 Pulse Width PW (S) Avalanche Test Circuit VDS Monitor Avalanche Waveform L EAR = 1 • L • IAP2 • 2 VDSS VDSS – VDD IAP Monitor Rg D.U.T V(BR)DSS IAP VDD VDS ID Vin 15 V 50 Ω 0 Rev.4.00 May 15, 2006 page 5 of 7 VDD 2SK3228 Switching Time Test Circuit Switching Time Waveform 90% Vout Monitor Vin Monitor D.U.T. Vin 10% RL Vout Vin 10 V 50 Ω VDD = 30 V 10% 90% td(on) Rev.4.00 May 15, 2006 page 6 of 7 10% tr 90% td(off) tf 2SK3228 Package Dimensions Package Name TO-220AB JEITA Package Code SC-46 RENESAS Code PRSS0004AC-A Previous Code TO-220AB / TO-220ABV MASS[Typ.] 1.8g Unit: mm 2.79 ± 0.2 11.5 Max 10.16 ± 0.2 9.5 +0.1 φ 3.6 –0.08 1.26 ± 0.15 15.0 ± 0.3 18.5 ± 0.5 1.27 6.4 +0.2 –0.1 8.0 4.44 ± 0.2 7.8 ± 0.5 0.76 ± 0.1 2.54 ± 0.5 14.0 ± 0.5 2.7 Max 1.5 Max 0.5 ± 0.1 2.54 ± 0.5 Ordering Information Part Name 2SK3228-E Quantity 500 pcs Shipping Container Box (Sack) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.4.00 May 15, 2006 page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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