polyfet rf devices LZ402 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 125.0 Watts Single Ended Package Style LZ "Polyfet"TM process HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency. o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 230 Watts Junction to Case Thermal Resistance Maximum Junction Temperature o 0.75 C/W o 200 C DC Drain Current Storage Temperature o o -65 C to 150 C 13.5 A Drain to Gate Voltage Drain to Source Voltage Gate to Source Voltage 70 V 70 V 20 V RF CHARACTERISTICS ( 125.0 WATTS OUTPUT ) SYMBOL PARAMETER MIN Gps Common Source Power Gain η Drain Efficiency VSWR TYP MAX 12 60 Load Mismatch Tolerance 10:1 UNITS TEST CONDITIONS dB Idq = 0.60 A, Vds = 28.0 V, F = 500 MHz % Idq = 0.60 A, Vds = 28.0 V, F = 500 MHz Relative Idq = 0.60 A, Vds = 28.0 V, F = 500 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS V Bvdss Drain Breakdown Voltage Idss Zero Bias Drain Current 2.0 mA Vds = 28.0 V, Vgs = 0V Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V Vgs Gate Bias for Drain Current 5 V gM Forward Transconductance 65 2 Ids = 50.00 mA, Vgs = 0V Ids = 0.30 A, Vgs = Vds 5.4 Mho Vds = 10V, Vgs = 5V 0.17 Ohm Vgs = 20V, Ids =16.00 A Vgs = 20V, Vds = 10V Rdson Saturation Resistance Idsat Saturation Current 34.00 Amp Ciss Common Source Input Capacitance 160.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitance 8.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitance 100.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 10/01/2007 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com LZ402 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE LZ402 POUT VS PIN Freq=500MHz, VDS=28V, Idq=.6A L4B 1 DICE CAPACITANCE 1000 140 15.00 130 Coss 120 14.00 110 Pout 100 100 Ciss 13.00 90 Gain 80 70 12.00 10 60 Crss Efficiency = 62% 50 11.00 40 30 20 1 10.00 1 2 3 4 5 6 7 PIN IN WATTS 8 9 10 0 11 4 8 IV CURVE 16 20 24 28 ID & GM VS VGS L4B 2 DIE ID & GM Vs VG L4B 2 DIE IV 100.00 Id in amps; Gm in mhos 30 25 Id 10.00 20 ID IN AMPS 12 VDS IN VOLTS 15 10 5 1.00 gM 0.10 0 0 2 vg=2v 4 6 Vg=4v 8 10 12 14 VDS IN VOLTS vg=8v Vg=6v 16 0 18 20 0 2 vg=12v Zin Zout 4 6 8 10 Vgs in Volts 12 14 16 18 PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 POLYFET RF DEVICES .XXX +/-.005 inches REVISION 10/01/2007 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com