polyfet rf devices GX141 General Description Polyfet's GAN (on SiC) HEMT power transistors contain no internal matching; making them suitable for both broadband and narrow band applications. The use of a thermally enhanced package enables this device to have superior heat dissipation properties. The high drain break down voltage permits this device to operate over a wide voltage range of up to 50V. RF POWER GAN TRANSISTOR 35.0 Watts Single Ended Package Style GX HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation Junction to Case Thermal Resistance 70 Watts o 3.70 C/W Maximum Junction Temperature o 200 C RF CHARACTERISTICS ( MIN SYMBOL PARAMETER Gps Common Source Power Gain η Drain Efficiency VSWR TYP Storage Temperature Drain to Source Voltage o o -65 C to 150 C 180 V -10 V to + 2 V 35.0 WATTS OUTPUT ) MAX 11 65 Load Mismatch Tolerance Gate to Source Voltage 10:1 UNITS TEST CONDITIONS dB Idq = 0.15 A, Vds = 48.0 V, F = 2,000 MHz % Idq = 0.15 A, Vds = 48.0 V, F = 2,000 MHz Relative Idq = 0.15 A, Vds = 48.0 V, F = 2,000 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER Bvdss Drain Breakdown Voltage Idss Zero Bias Drain Current Vgs Gate Bias for Drain Current MIN TYP MAX UNITS V 125 1.0 mA TEST CONDITIONS Ids = 7.00 mA, Vgs = -8V Vds = 48.0 V, Vgs = -8V -3.2 V Vds = 48.0 V, Ids = 0.15 A Ciss Common Source Input Capacitance 12.5 pF Vds = 48.0 Vgs =-8V, F = 1 MHz Crss Common Source Feedback Capacitance 0.40 pF Vds = 48.0 Vgs =-8V, F = 1 MHz Coss Common Source Output Capacitance 5.5 pF Vds = 48.0 Vgs =-8V, F = 1 MHz POLYFET RF DEVICES REVISION 04/14/2011 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com GX141 POUT VS PIN GRAPH BROADBAND PERFORMANCE 18.0 90 16.0 80 14.0 70 12.0 60 10.0 50 8.0 40 6.0 30 4.0 20 2.0 10 0.0 20 100 Gain 200 300 Efficiency 400 500 600 700 800 900 Efficiency (%) Gain (dB) Gain/Eff. vs Freq: Pout 25W, Vds = 48Vdc, Idq = 150mA 0 1000 Frequency (MHz) BROADBAND PERFORMANCE BROADBAND PERFORMANCE P3dB/Gain/Efficiency vs Frequency: Vds = 48Vdc, Idq = 150mA Gain/Eff. vs Freq: Pout 10W, Vds = 28Vdc, Idq = 150mA 100 45 80 18.0 40 16.0 70 14.0 60 40 8.0 30 6.0 4.0 20 2.0 10 P3dB (W) & Gain (dB) 10.0 30 60 25 20 40 15 10 Efficiency (MHz) 50 Efficiency (%) 12.0 Gain (dB) 80 35 20 5 0.0 20 100 Gain 200 300 400 500 600 700 800 0 1000 900 0 20 Frequency (MHz) Efficiency P3dB 100 200 Gain 300 Efficiency 400 500 600 700 800 900 0 1000 Frequency (MHz) PACKAGE DIMENSIONS IN INCHES BROADBAND PERFORMANCE Harmonics/IM3 vs Frequency: Vds = 48Vdc, Idq = 150mA 0 Attenuation (dBc) -5 -10 -15 -20 -25 -30 -35 20 100 200 2nd Harmonics (30W) 300 400 IM3 (30W PEP) 500 600 700 800 900 1000 Frequency (MHz) Tolerance .XX +/-0.01 POLYFET RF DEVICES .XXX +/-.005 inches REVISION 04/14/2011 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com