CMPA0060025D 25 W, 20 MHz - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA0060025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC enables very wide bandwidths. PN: CMPA00 6002 5D Typical Performance Over 1.0-6.0 GHz Parameter (TC = 25˚C) 1.0 GHz 2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz Units 18.0 18.0 18.5 18.0 17.0 17.0 dB 34 38 42 29 30 31 W 13.3 13.9 14.2 12.6 13.1 12.9 dB 54 45 46 33 34 33 % Gain Output Power @ PIN 32 dBm Associated Gain @ PIN 32 dBm PAE @ PIN 32 dBm Note: VDD = 50 V, ID = 500 mA ember 2014 Rev 1.2 – Dec Features Applications • 18 dB Small Signal Gain • Ultra Broadband Amplifiers • 30 W Typical PSAT • Test Instrumentation • Operation up to 50 V • EMC Amplifier Drivers • High Breakdown Voltage • High Temperature Operation • Size 0.157 x 0.094 x 0.004 inches Subject to change without notice. www.cree.com/RF 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Parameter Symbol Rating Units Drain-source Voltage VDSS 84 VDC Gate-source Voltage VGS -10, +2 VDC Storage Temperature TSTG -65, +150 ˚C Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 12 mA Thermal Resistance, Junction to Case (packaged)1 RθJC 3.0 ˚C/W Input Power2 PIN 36 dBm Note1 Eutectic die attach using 80/20 AuSn solder mounted to a 10 mil thick CuMo carrier. Note2 Limit for internal resistor only. Thermal dissipation may be exceeded at this level. Electrical Characteristics (Frequency = 20 MHz to 6.0 GHz unless otherwise stated; TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage1 V(GS)TH -3.8 -3.0 -2.7 V Gate Quiescent Voltage V(GS)Q – -2.7 – VDC VDD = 50 V, IDQ = 500 mA IDS – 12 – A VDS = 12.0 V, VGS = 2.0 V Small Signal Gain S21 – 18 – dB VDD = 50 V, IDQ = 500 mA Input Return Loss S11 – 9 – dB VDD = 50 V, IDQ = 500 mA Output Return Loss S22 – 7 – dB VDD = 50 V, IDQ = 500 mA Output Power, 1 POUT1 17 29 – W Output Power, 2 POUT2 23 30 – W Output Power, 3 POUT3 23 31 – W Power Added Efficiency, 1 PAE1 18 33 – % DC Characteristics Saturated Drain Current2 VDS = 20 V, ∆ID = 6 mA RF Characteristics Power Added Efficiency, 2 Power Added Efficiency, 3 Power Gain Output Mismatch Stress PAE2 23 34 – % PAE3 22 33 – % GP – 13 – dB VSWR – – 5:1 Y VDD = 50 V, IDQ = 500 mA, PIN = 32 dBm, Freq = 4.0 GHz VDD = 50 V, IDQ = 500 mA, PIN = 32 dBm, Freq = 5.0 GHz VDD = 50 V, IDQ = 500 mA, PIN = 32 dBm, Freq = 6.0 GHz VDD = 50 V, IDQ = 500 mA, PIN = 32 dBm, Freq = 4.0 GHz VDD = 50 V, IDQ = 500 mA, PIN = 32 dBm, Freq = 5.0 GHz VDD = 50 V, IDQ = 500 mA, PIN = 32 dBm, Freq = 6.0 GHz VDD = 50 V, IDQ = 500 mA, PIN = 32 dBm No damage at all phase angles, VDD = 50 V, IDQ = 500 mA, PIN = 32 dBm Notes: 1 The device will draw approximately 55-70 mA at pinch off due to the internal circuit structure. 2 Scaled from PCM data. 3 All data pulsed with Pulse Width at 10µS, 1% Duty Cycle 3 Data measured into a 15 dB output load with a maximum return loss. Copyright © 2009-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 2 CMPA0060025D Rev 1.2 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/RF Die Dimensions (units in microns) Overall die size 3990 x 2400 (+0/-50) microns, die thickness 100 (+/-10) micron. All Gate and Drain pads must be wire bonded for electrical connection. Pad Number Function Description Pad Size (microns) 1 RF IN1 RF-Input pad. Matched to 50 ohm. Requires gate control from an external bias –T from -2.3 V to -3.8 V. 2 Gate Termination Off Chip termination for the Gate. It needs to be DC-blocked . 200 x 150 RF OUT1 RF-Output pad. Matched to 50 ohm. Requires Drain supply from an external bias –T up to 50 V , 2.0 A 150 x 200 3 150 x 200 Notes: 1 The RF In and Out pads have a ground-signal-ground configuration with a pitch of 75 microns. Die Assembly Notes: • Recommended solder is AuSn (80/20) solder. Refer to Cree’s website for the Eutectic Die Bond Procedure application note at www.cree.com/wireless. • • • • • • • Vacuum collet is the preferred method of pick-up. The backside of the die is the Source (ground) contact. Die back side gold plating is 5 microns thick minimum. Thermosonic ball or wedge bonding are the preferred connection methods. Gold wire must be used for connections. Test pad must be bonded to Ground. Use the die label (XX-YY) for correct orientation. Copyright © 2009-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 3 CMPA0060025D Rev 1.2 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/RF Functional Block Diagram This device employs a wideband amplifier topology. It has an internal termination for the Gate, which works well over 1.0-6.0 GHz. For operation below 1.0 GHz an external termination is required. This termination needs to be DCblocked and suitable to withstand up to 2 W of RF power. (Refer to the reference design section for the LF-termination in this data sheet for more details). The circuits also require external wideband Bias –T’s to supply voltage to the Gate and Drain. The Bias-T at the Drain needs to be designed to handle 50 V and up to 2.0 A. Vd 3 Vg RF OUT 2 1 DC DC & 1 RF RF 2 BIASTEE 3 DC 2 RF DC & RF RF IN 1 2 1 2 BIASTEE 1 GATE TERMINATION Figure 1. Copyright © 2009-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 4 CMPA0060025D Rev 1.2 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/RF External Termination Reference Design The following is a plot of the gain of theCMPA0060025 die with and without anwithout RC reference circuit. Gain with and LF termination 35 30 No LF Termination Ref RF Termination Gain (dB) 25 20 15 10 5 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Frequency (GHz) Notes: 1 An off chip termination is needed to reduce the high gain peak at low frequencies. 2 The off chip termination should be designed to minimize the impact on the MMIC’s performance at higher frequencies. RC Reference Circuit The reference circuit is a series capacitor and resistor as shown below. C = 2200pF RG = 5 Figure 2. The resistor needs to handle 2.0 W. Copyright © 2009-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 5 CMPA0060025D Rev 1.2 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/RF Typical Performance Power Gain vs Frequency Associated Gain vs Frequency P = 32 dBm PIN IN= 32 dBm 15 47 50V 14 50V 46 40V 13 40V 45 Output Power (dBm) Gain (dB) Power Output vs Frequency Power Output vs Frequency P = 32 dBm IN PIN = 32 dBm 12 \ 11 44 43 10 42 9 41 8 40 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 Frequency (GHz) Frequency (GHz) Power Added Efficiency vs Frequency PowerPAdded =Efficiency 32 dBm vs Frequency IN Gain andCMPA0060025D Return Small Losses vs Frequency Signal Response, V =50V, VDD = 50 V,I I=500mA = 500 mA DQ DD PIN = 32 dBm 25 DQ 25 60 20 55 15 50V 10 40V 10 S11 S22 S21 (dB) 45 PAE(%) 15 S21 40 35 5 5 0 0 -5 -5 -10 -10 -15 -15 -20 -20 30 25 20 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 Frequency (GHz) -25 -25 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 Frequency (GHz) Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D Charge Device Model CDM II (200 < 500 V) JEDEC JESD22 C101-C Copyright © 2009-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 6 CMPA0060025D Rev 1.2 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/RF S11 (dB), S22 (dB) 50 20 Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications, and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended, or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. CREE and the CREE logo are registered trademarks of Cree, Inc. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/wireless Sarah Miller Marketing & Export Cree, RF Components 1.919.407.5302 Ryan Baker Marketing Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright © 2009-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 7 CMPA0060025D Rev 1.2 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/RF