Three-Phase IGBT BRIDGE + HIGH SIDE BRAKE IGBT

SENSITRON
SEMICONDUCTOR
SPM1004
TECHNICAL DATA
DATASHEET 5280, Rev. -
Three-Phase IGBT BRIDGE
+ HIGH SIDE BRAKE IGBT
DESCRIPTION:

1200 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE AND BRAKE IGBT.

NEAR HERMETIC PACKAGE.

USE OF LATEST 4TH GENERATION IGBT AND DIODE TO MINIMIZE TOTAL LOSSES.

AlSiC BASE PLATE FOR HIGH TEMPERATURE CYCLE CAPABILITY.

LOW PROFILE LIGHTWEIGHT PACKAGE.

INTERNAL BUSBAR LAYOUT MINIMIZES INDUCTANCE.

INTERNAL GATE SOURCE PROTECTION ZENERS
©2013 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729
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SENSITRON
SEMICONDUCTOR
SPM1004
TECHNICAL DATA
DATASHEET 5280, Rev. -
THREE PHASE AND BRAKE IGBT SECTION
0
ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
(Tj=25 C UNLESS OTHERWISE SPECIFIED)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
BVCES
1200
-
-
V
VGETH
5.2
5.8
6.4
V
-
-
150
A
INVERTER AND BRAKE IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage
IC = 4mA, VGE = 0V
Gate Threshold Voltage
IC = 5.3mA, VCE = VGE
O
Continuous Collector Current
TC = 25 C
IC
O
TC = 80 C
Zero Gate Voltage Collector Current
95
ICES
o
-
-
VCE = 1200V, VGE = 0V Ti = 25 C
1
mA
25
mA
2.4
V
10
μA
o
VCE = 800V, VGE = 0V Ti = 125 C
O
Collector to Emitter Saturation Voltage,
Tj = 25 C
VCE(SAT)
-
O
IC = 150A, VGE = 15V
Tj = 125 C
Gate to Emitter Leakage Current
1.9
2.2
IGES
VCE = 0V, VGE = 15V
IGBT Internal Gate Resistance
-
5
-
Ohm
IGBT turn-on switching loss
o
VCE = 600V, IC = 150A, Tj = 25 C
-
5
-
mJ
IGBT turn-off switching loss
o
VCE = 600V, IC = 150A, Tj = 25 C
-
10
-
mJ
Short Circuit Withstand Time, Conditions 600V DC link,
-
10
-
µs
RJC
-
-
0.24
PIV
1200
-
-
V
IF
-
-
95
A
VF
-
1.8
2.2
V
trr
-
220
-
A
-
7
-
mJ
-
-
0.42
O
VGE=15V, ISC = 600A, Tstart < 175 C
Junction To Case Thermal Resistance
o
C/W
INVERTER DIODE SPECIFICATIONS
Diode Peak Inverse Voltage
O
Continuous Forward Current, TC = 80 C
Diode Forward Voltage
O
IF = 150A, Tj = 25 C
Diode Peak Reverse Recovery Current
O
IF=150A, VRR=600V, di/dt = 6000 A/s, Tj = 25 C
Diode switching loss
O
IF=150A, VRR=600V, di/dt = 6000 A/s, Tj = 25 C
Junction To Case Thermal Resistance
RJC
©2013 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729
(631) 586 7600 FAX (631) 242 9798  www.sensitron.com  [email protected]  Page 2
o
C/W
SENSITRON
SEMICONDUCTOR
SPM1004
TECHNICAL DATA
DATASHEET 5280, Rev. -
BRAKE DIODE SPECIFICATIONS
Diode Peak Inverse Voltage
PIV
1200
-
-
V
IF
-
-
63
A
VF
-
-
1.3
V
IRM
-
-
0.05
2
mA
RJC
-
-
0.63
O
Continuous Forward Current, TC = 80 C
O
Diode Forward Voltage, IF = 100A, Tj = 25 C
Diode Leakage Current @ 1200V
Junction To Case Thermal Resistance
O
Tj = 25 C
O
Tj = 125 C
o
C/W
MODULE TOTAL WEIGHT
Total Weight
W
-
-
440
gms
Operating Junction Temperature
Tj
-55
-
150
o
Storage Ambient Temperature
Ts
-55
-
150
o
Operating Case Temperature
Tc
-55
-
125
o
Operating Ambient Temperature
TA
-40
-
100
o
-
-
50000
2500
-
MODULE STORAGE AND OPERATING CONDITIONS
Operating Altitude
C
C
C
C
ft.
MODULE ISOLATION
All pins to baseplate (sea level)
-
-
©2013 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729
(631) 586 7600 FAX (631) 242 9798  www.sensitron.com  [email protected]  Page 3
VDC
SENSITRON
SEMICONDUCTOR
SPM1004
TECHNICAL DATA
DATASHEET 5280, Rev. -
MECHANICAL OUTLINE
©2013 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729
(631) 586 7600 FAX (631) 242 9798  www.sensitron.com  [email protected]  Page 4
SENSITRON
SEMICONDUCTOR
SPM1004
TECHNICAL DATA
DATASHEET 5280, Rev. -
SCHEMATIC
All zener diodes are 18V.
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©2013 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729
(631) 586 7600 FAX (631) 242 9798  www.sensitron.com  [email protected]  Page 5