NP16N04YUG Data Sheet

Preliminary Data Sheet
NP16N04YUG
R07DS0362EJ0100
Rev.1.00
Jun 13, 2011
MOS FIELD EFFECT TRANSISTOR
Description
The NP16N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Low on-state resistance
⎯ RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 8 A)
• Low Ciss: Ciss = 740 pF TYP. (VDS = 25 V, VGS = 0 V)
• Designed for automotive application and AEC-Q101 qualified
• Small size package 8-pin HSON
Ordering Information
Part No.
NP16N04YUG-E1-AY ∗1
NP16N04YUG-E2-AY ∗1
Lead Plating
Pure Sn (Tin)
Packing
Tape 2500 p/reel
Taping (E1 type)
Taping (E2 type)
Package
8-pin HSON
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.)
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ∗1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C) ∗2
Channel Temperature
Storage Temperature
Repetitive Avalanche Current ∗3
Repetitive Avalanche Energy ∗3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAR
EAR
Ratings
40
±20
±16
±48
36
1.0
175
−55 to +175
13
12
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance ∗2
Rth(ch-C)
Rth(ch-A)
4.17
150
°C/W
°C/W
Notes: ∗1. TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1%
∗
2. Mounted on glass epoxy substrate of 40 mm x 40 mm x 1.6 mmt with 4% copper area (35 μm)
∗
3. Tch(peak) ≤ 150°C, RG = 25 Ω
Caution This product is an electrostatic-sensitive device due to low ESD capability and should be handled
with caution for electrostatic discharge. HBM (C = 100 pF, R = 1.5 kΩ) ± 500 V.
R07DS0362EJ0100 Rev.1.00
Jun 13, 2011
Page 1 of 6
NP16N04YUG
Chapter Title
Electrical Characteristics (TA = 25°C)
Item
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance ∗1
Symbol
IDSS
IGSS
VGS(th)
| yfs |
MIN.
TYP.
2.0
4
RDS(on)
3.0
8
20
Drain to Source On-state
Resistance ∗1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage ∗1
Reverse Recovery Time
Reverse Recovery Charge
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
740
83
57
10
4
19
5
16
5
6
0.9
25
24
MAX.
1
±100
4.0
Unit
μA
nA
V
S
mΩ
25
1110
110
100
20
10
38
13
24
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
1.5
Test Conditions
VDS = 40 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = VGS, ID = 250 μ A
VDS = 5 V, ID = 8 A
VGS = 10 V, ID = 8 A
VDS = 25 V,
VGS = 0 V,
f = 1 MHz
VDD = 20 V, ID = 8 A,
VGS = 10 V,
RG = 0 Ω
VDD = 32 V,
VGS = 10 V,
ID = 16 A
IF = 16 A, VGS = 0 V
IF = 16 A, VGS = 0 V,
di/dt = 100 A/μ s
Note: ∗1. Pulsed test
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
PG.
VGS = 20 → 0 V
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
50 Ω
VGS
RL
Wave Form
RG
PG.
VDD
VGS
0
VGS
10%
90%
VDD
VDS
90%
BVDSS
IAS
90%
VDS
VGS
0
VDS
10%
0
10%
Wave Form
VDS
ID
τ
VDD
Starting Tch
τ = 1 μs
Duty Cycle ≤ 1%
td(on)
tr
ton
td(off)
tf
toff
TEST CIRCUIT 3 GATE CHARGE
PG.
D.U.T.
IG = 2 mA
RL
50 Ω
VDD
R07DS0362EJ0100 Rev.1.00
Jun 13, 2011
Page 2 of 6
NP16N04YUG
Chapter Title
Typical Characteristics (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
TOTAL POWER DISSIPATION vs.
OPERATING AREA
CASE TEMPERATURE
40
35
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
120
100
80
60
40
20
30
25
20
15
10
5
0
0
0
25
50
75
100
125
150
0
175
25
50
75
100 125
150 175
TC - Case Temperature - °C
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
ID - Drain Current - A
1000
100
RDS(ON) Limited
(VGS = 10 V)
TC = 25°C
Single Pulse
ID(Pulse) = 48 A
PW = 100 μs
10
1 ms
Power Disspation
Limited
10 ms
1
Secondary Brakedown
Limited
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - °C/W
1000
Rth(ch-A) = 150°C/W
100
10
Rth(ch-C) = 4.17°C/W
1
Single pulse
Mounted on glass epoxy substrate of 40 mm × 40 mm × 1.6 mmt
with 4% copper area (35 μm)
0.1
0.01
100 μ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
R07DS0362EJ0100 Rev.1.00
Jun 13, 2011
Page 3 of 6
NP16N04YUG
Chapter Title
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
60
100
50
10
ID - Drain Current - A
ID - Drain Current - A
DRAIN TO SOURCE VOLTAGE
40
V GS = 10 V
30
20
10
Pulsed
0
0
0.5
1
1.5
TA = −55 °C
−25 °C
25 °C
75 °C
125 °C
175 °C
1
0.1
0.01
VDS = 10 V
Pulsed
0.001
0
2
2
4
5
6
GATE TO SOURCE THRESHOLD VOLTAGE
FORWARD TRANSFER ADMITTANCE vs. DRAIN
vs. CHANNEL TEMPERATURE
CURRENT
VDS = VGS
ID = 250 μA
3.5
3
2.5
2
1.5
1
0.5
0
-100
-50
0
50
100
150
200
| yfs | - Forward Transfer Admittance - S
4
100
TA = −55 °C
−25 °C
25 °C
75 °C
125 °C
175 °C
10
1
VDS = 5 V
Pulsed
0.1
0.1
1
Tch - Channel Temperature - °C
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
vs. DRAIN CURRENT
GATE TO SOURCE VOLTAGE
40
35
30
25
20
15
10
VGS = 10 V
Pulsed
5
0
0.1
1
10
ID - Drain Current - A
R07DS0362EJ0100 Rev.1.00
Jun 13, 2011
100
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
3
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
VGS(th) - Gate to Source Threshold Voltage - V
1
90
80
3.2 A
70
60
8A
50
40
ID = 12.8 A
30
20
10
Pulsed
0
0
5
10
15
20
VGS - Gate to Source Voltage - V
Page 4 of 6
NP16N04YUG
Chapter Title
DRAIN TO SOURCE ON-STATE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
50
VGS = 10 V
ID = 8 A
Pulsed
45
40
Ciss, Coss, Crss - Capacitance - pF
RDS(on) - Drain to Source On-state Resistance - mΩ
RESISTANCE vs. CHANNEL TEMPERATURE
35
30
25
20
15
10
5
0
-100
-50
0
50
100
150
Ciss
1000
Coss
100
Crss
10
VGS = 0 V
f = 1 MHz
1
0.01
200
0.1
1
10
100
VDS - Drain to Source Voltage - V
Tch - Channel Temperature - °C
35
VDD = 20 V
VGS = 10 V
RG = 0 Ω
VDS - Drain to Source Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
100
td(off)
10
td(on)
tf
tr
30
12
ID = 16 A
VDD = 32 V
20 V
8V
10
25
8
20
6
VGS
15
4
10
5
2
VDS
0
0
1
0.1
1
10
0
100
VGS - Gate to Source Voltage - V
SWITCHING CHARACTERISTICS
2
4
6
8
10
12
14
16
18
QG - Gate Charge - nC
ID - Drain Current - A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
VGS = 10 V
10
trr - Reverse Recovery Time - ns
IF - Diode Forward Current - A
100
0V
1
Pulsed
0.1
10
di/dt = 100 A/μs
VGS = 0 V
1
0
0.2
0.4
0.6
0.8
1
VF(S-D) - Source to Drain Voltage - V
R07DS0362EJ0100 Rev.1.00
Jun 13, 2011
1.2
0.1
1
10
100
IF - Drain Current - A
Page 5 of 6
NP16N04YUG
Chapter Title
Package Drawings (Unit: mm)
1.27
8-pin HSON (Mass: 0.13 g TYP.)
1
5
+0.1
5.0 ±0.2
6
4
0.42 −0.05
7
3
6.0 ±0.2
5.15 ±0.2
8
2
0.10 S
3.8 ±0.2
1.45 MAX.
0.73
0.4
0.42 ±0.05
0
+0.05
−0
0.10 M
5.4 ±0.2
1, 2, 3 : Source
4
: Gate
5, 6, 7, 8: Drain
3.18 ±0.2
0.6 ±0.15
0.8 ±0.15
Equivalent Circuit
Drain
Body
Diode
Gate
Source
Remark
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static
electricity as much as possible, and quickly dissipate it once, when it has occurred.
R07DS0362EJ0100 Rev.1.00
Jun 13, 2011
Page 6 of 6
Revision History
NP16N04YUG Data Sheet
Rev.
Date
Page
1.00
Jun 13, 2011
−
Description
Summary
First Edition Issued
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