RF5722 - RFMD.com

RF5722
3.0V TO 3.6V, 2.4GHz TO 2.5GHz
LINEAR POWER AMPLIFIER
Features







VC1
RF IN 1
Single Power Supply 3.0V to
3.6V
24dB Minimum Gain
Input Matched to 50
2400MHz to 2500MHz Frequency Range
+18dBm at <2.5% typ EVM,
120mA at 3.3VCC
6 VC2
Input
Match
IEEE802.11b/g/n WiFi Applications
2.5GHz ISM Band Applications
Commercial and Consumer
Systems
Portable Battery-Powered
Equipment
Spread-Spectrum and MMDS
Systems
Interstage
Match
2Fo
Filter
VREG 2
Bias Circuit
3
Applications

7
Power
Detector
5 RF OUT
4
NC

8
PDETECT

VCC
Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.45mm
Functional Block Diagram
Product Description
The RF5722 is a linear, medium-power, high-efficiency, two-stage amplifier IC
designed specifically for battery-powered WiFi applications such as PC cards, mini
PCI, and compact flash applications. The device is manufactured on an advanced
InGaP Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has
been designed for use as the final RF amplifier in 2.5GHz OFDM and other spreadspectrum transmitters. The device is provided in a 2.2mmx2.2mm, 8-pin, QFN with
a backside ground. The RF5722 is designed to maintain linearity over a wide range
of supply voltages and power outputs. The RF5722 also has built-in power detector
and incorporates the input, and interstage components internally which reduces
the component count used externally and makes it easier to incorporate on any
design.
Ordering Information
RF5722
RF5722SR
RF5722TR7
RF5722PCK-410
Standard 25 piece bag
Standard 100 piece reel
Standard 2500 piece reel
Fully assembled evaluation board tuned for 2.4GHz to
2.5GHz and 5 loose sample pieces
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT

SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS110619
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RF5722
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
-0.5 to +5.0
VDC
Power Control Voltage (VREG)
-0.5 to 3.5
V
DC Supply Current
400
mA
Input RF Power
+5
dBm
-30 to +85
°C
-30 to -10
°C
-40 to +150
°C
Operating Ambient Temperature
Degraded Performance
Storage Temperature
Moisture Sensitivity
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
TBD
ESD HBM
TBD
V
MM
TBD
V
Parameter
Min.
Specification
Typ.
Max.
Unit
Condition
Temperature=+25°C, VCC =3.3V,
VREG =2.85V pulsed at 1% to 100% duty cycle,
Frequency=2450MHz,
circuit per evaluation board schematic, unless
otherwise specified
Overall
2.40
Frequency
Output Power
17
EVM*
2.50
18
2.5
Gain
24
dBm
4
IEEE802.11g
IEEE802.11n
At max data rate, OFDM modulation
%
RMS, mean
dB
At +18dBm RF POUT and 54Mbps
1.25
±dB
-30°C to +85°C
1.25
V
25.5
Gain Variance
GHz
Power Detector
POUT =18dBm
0.85
Current
Operating
120
160
mA
At +18dBm RF POUT and 54Mbps
175
mA
At +20dBm and 1Mbps
85
mA
Data rate at <3.5% EVM RMS, mean,
T=-30°C to +50°C
2
mA
VCC =+3.3VDC
11b Operating
Quiescent
IREG Current
10
A
Power Supply
3.0
3.3
3.6
VDC
Operating Range
VREG1, VREG2 Input Voltage
2.75
2.85
2.9
VDC
Operating Range
Shutdown
Output VSWR
10:1
Input Return Loss
-15
-10
Turn-on Time**
0.5
1.0
S
-43
dBm
Second Harmonic
dB
Output stable to within 90% of final gain
Fundamental frequency is between 2400MHz
and 2500MHz; RF POUT =+18dBm. See note 2.
ACP Lower
-53
-50
18.5dBm (min), -20dBm (typ.)
ACP Upper
-33
-30
18.5dBm (min), -20dBm (typ.)
Notes: *The EVM specification is obtained with a signal generator that has an EVM floor of less than 0.7%.
**The PA must operate with gated bias voltage input at 1% to 99% duty cycles without any EVM or other parameter degradation.
Note 2: For best harmonic rejection please refer to the harmonic rejection application schematic.
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DS110619
RF5722
Pin
1
2
3
Function
RF IN
VREG
PDETECT
4
5
6
7
8
GND
RF OUT
VC2
VC1
VCC
Pkg
Base
GND
Description
RF input. Input is matched to 50 and DC block is provided internally.
Bias current control voltage for the first and second amplifier stage.
Power detector which provides an output voltage proportional to the RF output power level. May need external
decoupling capacitor for stability. May need external circuitry to bring output voltage to desired level.
Ground.
RF Output.
Voltage supply for the second amplifier stage.
Voltage supply for the first amplifier stage.
Supply voltage for the bias reference and control circuit. May be connected with VC1 and VC2 (with a single supply voltage) as long as VCC does not exceed +4.5VDC in this configuration.
The center metal base of the QFN package provides DC and RF ground as well as heat sink for the amplifier.
Package Drawing
0.50
0.40
2 PLCS
0.10 C
INDEX
AREA
0.152
REF
0.10 C
2 PLCS
2.20
0.05
0.00
-B-A-
2.20
SEATING
PLANE
0.65
0.10
MAX
1.20
TYP
1.00
Dimensions in mm.
Shaded lead is pin 1.
DS110619
-C-
0.31
0.21
0.28
0.18
0.10 M C A B
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support, contact RFMD at (+1) 336-678-5570 or [email protected].
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RF5722
4 of 10
VCC
VC1
Pin Out
8
7
VREG 2
5 RF OUT
3
4
N/C
6 VC2
PDETECT
RF IN 1
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS110619
RF5722
Application Schematic
C3
56 pF
VCC
50  strip
C1
0.1 F
L1
22 nH
C2
1 uF
8
J3
RF IN
7
L2
8.2 nH
50  strip
1
6
Input
Match
Interstage
Match
2Fo
Filter
VREG
2
Bias Circuit
R1
0
3
Power
Detector
L3
1.0 nH
50  strip
C6
DNP
5
50  strip
J4
RF OUT
C4
1.8 pF
4
C5
330 pF
PDETECT
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RF5722
Theory of Operation and Application Information
The RF5722 is a two-stage power amplifier (PA) with a minimum gain of 24dB minimum gain in the 2.4GHz to 2.5GHz ISM
band. The RF5722 has integrated input, interstage and output matching components thus allowing minimal bill of material
(BOM) parts count in end applications. The RF5722 is designed primarily for IEEE802.11b/g/n WiFi applications where the
available supply voltage and current are limited. This amplifier will operate to (and below) the lowest expected voltage made
available by a typical PCMCIA slot in a laptop PC, and will maintain required linearity at decreased supply voltages.
The RF5722 requires only a single positive supply of 3.3V nominal (or greater) to operate to full specifications. Power control is
provided through one bias control input pin (VREG). DC blocking caps are provided internally and the evaluation board circuit
(available from RF Micro Devices, Inc. (RFMD)) is optimized for 3.3VDC applications.
For best results, the PA circuit layout from the evaluation board should be copied as closely as possible, particularly the ground
layout and ground vias. Pin 4 must be left as a no-connect on the PCB in order for the PA to work properly. Other configurations
may also work, but the design process is much easier and quicker if the layout is copied from the RF5722 evaluation board.
Gerber files of RFMD PCBA designs can be provided on request. The RF5722 is a very easy part to implement, but care in circuit layout and component selection is always advisable when designing circuits to operate at 2.5GHz. The RF5722 evaluation
board layout and schematic are available using 0201 (US) size components which will help shrink the overall size of the total
area of the PA and components of the intended design. Please contact RFMD Sales or Application Engineering for additional
data and guidance.
For best performance, it is important to duplicate (as closely as possible) the layout of the evaluation board. The RF5722 has
primarily been characterized with a voltage on VREG of 2.8VDC. If you prefer to use a control voltage that is significantly different than 2.8VDC, or a different frequency than the recommended frequency range, contact RFMD Sales or Applications Engineering for additional data and guidance.
QFN8 Package Area versus Other Small Form Factor Package Areas
Package Type
Length (mm)
Width (mm)
Area (mm2)
Delta () (mm2) to QFN8
SOT 23-6
3.1
3.0
9.30
QFN12
3.0
3.0
9.00
4.46
4.16
SOT 23-5
2.9
2.8
8.12
3.28
QFN8
2.2
2.2
4.84
0.00
An application schematic for 2.5GHz operation is included that has two additional components, one shunt inductor, and one
shunt capacitor, on the output for improved second harmonic rejection. This layout provides ~20dB rejecetion at 5GHz with a
minimal BOM count.
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RF5722
Evaluation Board Schematic
VCC
P1
1
GND
P1-2
2
VCC
P1-3
3
VCC
P2-3
P2
3
P2-2
2
PDETECT
1
GND
C1
0.1 F
L1
22 nH
C3
56 pF
VREG
C2
1 F
8
J3
RF IN
7
1
6
Input
Match
Interstage
Match
2Fo
Filter
R1
0
VREG
L2
8.2 nH
50  strip
2
Bias Circuit
3
Power
Detector
L3
1.0 nH
50  strip
5
C4
1.8 pF
J4
RF OUT
4
C5
330 pF
PDETECT
DS110619
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
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RF5722
Evaluation Board Layout
Board Size 1.0” x 1.0”
Board Thickness 0.031”; Board Material FR-4; Multi-Layer
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support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS110619
RF5722
VCC=3.3V: Gain versus POUT
VCC=3.3V: EVM versus POUT
30.8
6
30.6
5
30.4
30.2
30.0
Gain (dB)
EVM (%)
4
3
2
29.8
29.6
29.4
29.2
29.0
2400 MHz
2450 MHz
2500 MHz
1
2400 MHz
2450 MHz
2500MHz
28.8
28.6
0
0.0
5.0
10.0
15.0
20.0
0.0
25.0
5.0
0.16
1.4
0.14
1.2
Power Detector (V)
0.12
ICC (mA)
0.10
0.08
0.06
0.04
2400 MHz
2450 MHz
2500MHz
20.0
25.0
1.0
0.8
0.6
0.4
2400 MHz
2450 MHz
2500 MHz
0.2
0.0
0.00
0
5
10
15
Output Power (dBm)
DS110619
15.0
VCC=3.3V: PDETECT versus POUT
VCC=3.3V: ICC versus POUT
0.02
10.0
Output Power (dBm)
Output Power (dBm)
20
25
0
5
10
15
20
25
Output Power (dBm)
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RF5722
PCB Design Requirements
PCB Surface Finish
The PCB surface finish used for RFMD's qualification process is electroless nickel, immersion gold. Typical thickness is 3inch
to 8inch gold over 180inch nickel.
PCB Land Pattern Recommendation
PCB land patterns are based on IPC-SM-782 standards when possible. The pad pattern shown has been developed and tested
for optimized assembly at RFMD; however, it may require some modifications to address company specific assembly processes. The PCB land pattern has been developed to accommodate lead and package tolerances.
PCB Solder Mask Pattern
Liquid Photo-Imageable (LPI) solder mask is recommended. The solder mask footprint will match what is shown for the PCB
metal land pattern with a 2mil to 3mil expansion to accommodate solder mask registration clearance around all pads. The
center-grounding pad shall also have a solder mask clearance. Expansion of the pads to create solder mask clearance can be
provided in the master data or requested from the PCB fabrication supplier.
PCB Recommendations
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