2SA473 - Savantic

SavantIC Semiconductor
Product Specification
2SA473
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220 package
·Complement to type 2SC1173
·Collector current :IC=-3A
·Collector dissipation:[email protected]=25
APPLICATIONS
·Low frequency power amplifier
·Power regulator
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-30
V
VCEO
Collector-emitter voltage
Open base
-30
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current (DC)
-3
A
PC
Collector power dissipation
10
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SA473
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA ;IB=0
-30
V
V(BR)CBO
Collector-base breakdown voltage
IC=-0.5mA ;IE=0
-30
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA ;IC=0
-5
V
Collector-emitter saturation voltage
IC=-2A; IB=-0.2A
-0.8
V
VBE
Base-emitter voltage
IC=-0.5A ; VCE=-2V
-1.0
V
ICBO
Collector cut-off current
VCB=-20V;IE=0
-1.0
µA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-1.0
µA
hFE-1
DC current gain
IC=-0.5A ; VCE=-2V
70
hFE-2
DC current gain
IC=-2.5A ; VCE=-2V
25
COB
Output capacitance
IE=0; VCB=-10V;f=1MHz
40
pF
fT
Transition frequency
IC=-0.5A ; VCE=-2V
100
MHz
VCEsat
CONDITIONS
hFE-1 classifications
O
Y
70-140
120-240
2
MIN
TYP.
MAX
UNIT
240
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
2SA473
SavantIC Semiconductor
Product Specification
2SA473
Silicon PNP Power Transistors
4