SAVANTIC 2SD288

SavantIC Semiconductor
Product Specification
2SD288
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·Collector-base voltage : VCBO=80V
·Collector dissipation : PC=25W(TC=25 )
APPLICATIONS
·Low frequency power amplifier
·Power regulator applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
80
V
VCEO
Collector-emitter voltage
Open base
55
V
VEBO
Emitter-base voltage
Open collector
5
V
3
A
25
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SD288
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA; IB=0
55
V
V(BR)CBO
Collector-base breakdown voltage
IC=0.5mA; IE=0
80
V
V(BR)EBO
Emitter-base breakdown votage
IE=0.5mA; IC=0
5
V
Collector-emitter saturation voltage
IC=1 A;IB=0.1 A
1.0
V
ICBO
Collector cut-off current
VCB=50V; IE=0
50
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
50
µA
hFE
DC current gain
IC=0.5A ; VCE=5V
VCEsat
CONDITIONS
hFE classifications
R
O
Y
40-80
70-140
120-240
2
MIN
40
TYP.
MAX
240
UNIT
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
2SD288
SavantIC Semiconductor
Product Specification
2SD288
Silicon NPN Power Transistors
4