SavantIC Semiconductor Product Specification 2SD1133 2SD1134 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2SB857/858 APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage CONDITIONS Open emitter 2SD1133 Emitter-base voltage UNIT 70 V 50 Open base 2SD1134 VEBO VALUE V 60 Open collector 5 V IC Collector current 4 A ICP Collector current-peak 8 A PC Collector power dissipation 40 W Tj Junction temperature 150 Tstg Storage temperature -45~150 TC=25 SavantIC Semiconductor Product Specification 2SD1133 2SD1134 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO PARAMETER Collector-emitter breakdown voltage CONDITIONS 2SD1133 MIN TYP. MAX UNIT 50 IC=50mA; RBE=; 2SD1134 V 60 V(BR)CBO Collector-base breakdown voltage IC=10µA; IE=0 70 V V(BR)EBO Emitter-base breakdown votage IE=10µA; IC=0 5 V Collector-emitter saturation voltage IC=2 A;IB=0.2 A 1.0 V VBE Base-emitter voltage IC=1A ; VCE=4V 1.0 V ICBO Collector cut-off current VCB=50V; IE=0 1 µA hFE-1 DC current gain IC=1A ; VCE=4V 60 hFE-2 DC current gain IC=0.1A ; VCE=4V 35 Transition frequency IC=0.5A ; VCE=4V VCEsat fT hFE-1 classifications B C D 60-120 100-200 160-320 2 320 7 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1133 2SD1134 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 SavantIC Semiconductor Product Specification 2SD1133 2SD1134 Silicon NPN Power Transistors 4