AH1-1 High Dynamic Range Amplifier Product Features 250 – 4000 MHz +41 dBm OIP3 3 dB Noise Figure 13.5 dB Gain +21 dBm P1dB Lead-free/Green/RoHS-compliant SOT-89 Package • Single +5 V Supply • MTTF > 100 years • • • • • • Applications • • • • • • Mobile Infrastructure CATV / DBS W-LAN / ISM RFID Defense / Homeland Security Fixed Wireless Product Description Functional Diagram The AH1-1 is a high dynamic range amplifier in a low-cost surface-mount package. The combination of low noise figure and high output IP3 at the same bias point makes it ideal for receiver and transmitter applications. The AH1-1 is a specially screened version of the AH1 offering a very narrow gain spread from device to device. GND The device combines dependable performance with superb quality to maintain MTTF values exceeding 100 years at mounting temperatures of +85°C. The AH1-1 is available in both the standard SOT-89 package and the environmentally-friendly lead-free/green/RoHS-compliant SOT-89 package. 1 2 3 RF IN GND RF OUT Function Input Output/Bias Ground Pin No. 1 3 2, 4 The broadband amplifier uses a high reliability GaAs MMIC technology and is targeted for applications where high linearity is required. It is well suited for various current and next generation wireless technologies such as GPRS, GSM, CDMA, and W-CDMA. In addition, the AH1-1 will work for other applications within the 250 to 3 4000 MHz frequency range such as fixed wireless. Specifications (1) Parameter 4 Typical Performance (4) Units Min MHz MHz dB dB dB dBm dBm dB mA V 250 Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) Noise Figure (3) Operating Current Range Supply Voltage 12.9 +37 120 Typ 800 13.3 8 15 +21.7 +41 3 150 5 Max Parameter 4000 Frequency S21 S11 S22 Output P1dB Output IP3 (2) IS-95 Channel Power (5) Noise Figure Supply Voltage Device Current 13.8 180 1. Test conditions unless otherwise noted: T = 25º C, 50 Ω system. 2. 3OIP measured with two tones at an output power of +5 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. Noise figure can be optimized by matching the input for optimal return loss. Units MHz dB dB dB dBm dBm dB dB V mA Typical 900 14.2 -21 -14 +21.7 +42 +15.5 3.2 1900 12.2 -14 -13 +22 +41 +16.5 3.3 5 150 2140 12.0 -21 -11 +22 +40 3.3 4. Parameters reflect performance in an AH1-PCB application circuit, as shown on page 3. 5. Measured with -45 dBc ACPR, IS-95 9 channels fwd. Absolute Maximum Rating Parameter Rating Operating Case Temperature Storage Temperature Supply Voltage RF Input Power (continuous) Junction Temperature -40 to +85 °C -55 to +150 °C +6 V +10 dBm +220 °C Ordering Information Part No. AH1-1G AH1-PCB Description High Dynamic Range Amplifier (lead-free/green/RoHS-compliant SOT-89 Pkg) 0.8 – 2.5 GHz Fully Assembled Application Circuit Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice. WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com, www.TriQuint.com Page 1 of 5 April 2007 AH1-1 High Dynamic Range Amplifier Typical Device Data S-Parameters (VDS = +5 V, IDS = 150 mA, T = 25°C, unmatched device in a 50 ohm system) Input return loss can be improved with the appropriate input matching network shown later in this datasheet. Gain vs. Output Power Output IP3 vs. Output Power 14 45 13 40 12 35 11 900 MHz IP3=35 IP3=36 IP3=37 30 100% Idss 75% Idss 10 OIP3 Load Pull Circles 900 MHz 25 50% Idss 9 5 10 15 20 IP3=38 75% Idss IP3=39 50% Idss 20 0 100% Idss 0 IP3=41 5 Output Power (dBm) 10 15 20 VSWR=1.5 Output Power (dBm) Gain vs. Frequency VSWR=2 VSWR=3 Return Loss vs. Frequency 20 0 VSWR=4 VSWR=5 w/o Matching Circuitry -5 15 -10 -15 10 -20 5 -25 0 S11 -30 0 500 1000 1500 2000 2500 3000 0 500 1000 Frequency (MHz) -40 1500 S22 2000 2500 3000 Frequency (MHz) ACPR vs. Channel Power ACPR vs. Channel Power IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW, 900 MHz IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW, 1900 MHz -40 -50 -50 -60 -60 -70 -70 10 11 12 13 14 15 16 17 Output Channel Power (dBm) 10 11 12 13 14 15 16 17 Output Channel Power (dBm) S-Parameters (VD = +5 V, ID = 150 mA, T = 25 °C, calibrated to device leads) Freq (MHz) 50 250 500 750 1000 1250 1500 1750 2000 2250 2500 2750 3000 S11 (dB) -2.65 -7.97 -8.57 -8.47 -8.24 -7.79 -7.18 -6.55 -6.03 -5.69 -5.55 -5.68 -5.86 S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) -29.52 17.80 164.25 -24.29 45.18 -8.25 -44.15 15.28 158.50 -21.31 6.75 -19.01 -60.61 14.91 147.54 -21.11 -3.83 -25.15 -80.72 14.60 134.66 -21.11 -10.90 -29.26 -100.99 14.22 121.38 -21.21 -17.00 -30.76 -120.81 13.80 108.59 -21.21 -23.01 -29.83 -138.15 13.27 96.13 -21.41 -28.54 -29.30 -152.70 12.69 84.26 -21.62 -33.67 -29.12 -164.30 12.11 73.25 -21.83 -38.35 -28.24 -173.54 11.57 62.88 -21.99 -42.48 -26.58 176.22 11.12 52.70 -22.10 -46.41 -25.60 166.67 10.76 42.57 -22.16 -50.57 -26.12 153.06 10.40 31.81 -22.27 -55.21 -29.48 Device S-parameters are available for download off of the website at: http://www.wj.com S22 (ang) -39.80 -65.37 -69.25 -84.69 -115.12 -88.78 -94.19 -136.07 -112.00 -97.44 -90.19 -87.80 -82.67 Specifications and information are subject to change without notice. WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com, www.TriQuint.com Page 2 of 5 April 2007 AH1-1 High Dynamic Range Amplifier Application Circuit: 800 – 2500 MHz (AH1-PCB) Vcc = +5 V ID=C5 C=56 pF Typical RF Performance at 25 °C Frequency S21 – Gain S11 – Input R.L. S22 – Output R.L. Output P1dB Output IP3 All passive components are of size 0603 unless otherwise noted. MHz 900 1900 2140 dB 14.2 12.2 12.0 dB -21 -14 -21 dB -14 -13 -11 dBm +21.7 +22 +22 dBm (+5 dBm / tone, 10 MHz spacing) IS-95 Channel Power +42 +41 Component C1 is shown in the silkscreen but is not used for this configuration. Z0=22 Ohm EL=15.2 Deg F0=0.9 GHz ID=C2 C=56 pF +40 ID=C6 C=56 pF dBm +15.5 +16.5 (@-45 dBc ACPR, 9 channels fwd) dB Noise Figure Device Bias ID=C4 L=12 nH ID=Q1 NET="AH1" ID=C3 L=5.6 nH 3.2 3.3 3.3 +5V @ 150mA Circuit Board Material: .062” total thickness with a .014” FR-4 top RF layer, 4 layers (other layers added for rigidity), 1 oz copper, 50Ω Microstrip line details: width = .025”. Gain Return Loss 15 Gain and Output IP3 vs. Temperature 0 Frequency = 800, 801 MHz @ Pout =5dBm 45 14 44 13 43 12 42 Gain (dB) -10 -15 12 -20 11 -25 10 -30 750 1000 1250 1500 1750 2000 2250 Gain 11 S11 S22 10 750 1000 1250 Frequency (MHz) 1500 1750 2000 2250 40 -40 -15 ACPR vs. Channel Power ACPR vs. Channel Power -50 -50 -60 -60 35 60 85 P1dB and Noise Figure vs. Temperature IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW, 900 MHz Frequency = 800 MHz 23 P1dB (dBm) -40 10 Temperature (oC) Frequency (MHz) IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW, 1900 MHz 41 OIP3 4 22 3 21 2 20 1 P1dB Noise Figure (dB) 13 Output IP3 (dBm) -5 14 -40 15 NF -70 -70 10 11 12 13 14 15 Output Channel Power (dBm) 16 17 19 10 11 12 13 14 15 16 17 0 -40 -15 10 35 o 60 85 Temperature ( C) Output Channel Power (dBm) Specifications and information are subject to change without notice. WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com, www.TriQuint.com Page 3 of 5 April 2007 AH1-1 High Dynamic Range Amplifier 250 - 650 MHz Reference Design Gain / Return Loss 250 14.8 -10 -19 450 650 14.5 13.8 -36 -11 -17 -13 +22 +42 2.8 2.8 3.2 +5V @ 150mA 16 0 DB(|S(2,1)|) (L) DB(|S(1,1)|) (R) DB(|S(2,2)|) (R) +5V 15 -5 14 -10 13 -15 C=1000 pF S 11, S22 (s B) MHz dB dB dB dBm dBm dB G ain (dB) Freq. Gain S11 S22 P1dB OIP3 NF Bias L=82 nH NET="AH1" C=1000 pF L=15 nH 12 -20 11 -25 0.2 0.3 0.4 0.5 Frequency (GHz) 0.6 0.7 900 MHz Reference Design +5 V 800 13.7 -13 -13 900 1000 13.7 13.6 -16 -18 -14 -15 +22 +41 2.5 +5V @ 150mA C=100 pF Gain / Return Loss 15 0 DB(|S(2,1)|) (L) DB(|S(1,1)|) (R) DB(|S(2,2)|) (R) 14 -5 13 -10 12 -15 11 -20 10 L=100 nH S11, S 22 (dB) MHz dB dB dB dBm dBm dB G ain (dB ) Freq. Gain S11 S22 P1dB OIP3 NF Bias C=100 pF NET="AH1" C=100 pF L=12 nH -25 0.7 0.8 0.9 Frequency (GHz) 1 1.1 2350 MHz Reference Design Gain / Return Loss 13 2.3 12.0 -24 -12 2.35 2.4 12.0 11.9 -40 -25 -13 -14 +22 +41 3.7 +5V @ 150mA DB(|S(1,1)|) (R) C=56 pF DB(|S(2,2)|) (R) 12 -5 11 -10 10 -15 9 -20 TLINP Z0=50 Ohm L=250 mil Eeff=3.4 Loss=0 F0=0 GHz S 11, S 22 (sB) GHz dB dB dB dBm dBm dB G ain (dB) Freq. Gain S11 S22 P1dB OIP3 NF Bias +5V 0 DB(|S(2,1)|) (L) L=22 nH NET="AH1" C=56 pF C=1.2 pF 8 -25 2.1 2.2 2.3 2.4 Frequency (GHz) 2.5 2.6 3500 MHz Reference Design Gain / Return Loss 3.3 9.8 -10 -16 3.5 3.8 9.9 9.5 -18 -14 -17 -16 +21.6 +41 4.8 4.3 4.1 +5V @ 150mA 11 0 DB(|S(1,1)|) (R) DB(|S(2,2)|) (R) +5V DB(|S(2,1)|) (L) C=18 pF 10 -5 9 -10 8 -15 7 -20 6 -25 S11, S22, (dB) GHz dB dB dB dBm dBm dB G ain (dB) Freq. Gain S11 S22 P1dB OIP3 NF Bias TLINP Z0=80 Ohm L=50 mil Eeff=3.4 Loss=0 F0=0 GHz L=12 nH NET="AH1" C=18 pF C=1 pF 3 3.2 3.4 3.6 Frequency (GHz) 3.8 4 Specifications and information are subject to change without notice. WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com, www.TriQuint.com Page 4 of 5 April 2007 AH1-1 High Dynamic Range Amplifier AH1-1G Mechanical Information This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260°C reflow temperature) and leaded (maximum 245°C reflow temperature) soldering processes. The plating material on the leads is NiPdAu. Outline Drawing Product Marking The AH1-1G will be marked with “AH1G” designator. An alphanumeric code (“XXXX-X”) is also marked below part designator on the top surface of package. A “1” will be lasermarked in upper right-hand corner. an lot the the the Tape and reel specifications for this part are located on the website in the “Application Notes” section. MSL / ESD Rating Land Pattern ESD Rating: Value: Test: Standard: Class 1B Passes ኑ500V to <1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Rating: Value: Test: Standard: Class IV Passes ኑ1000V to <2000V Charged Device Model (CDM) JEDEC Standard JESD22-C101 MSL Rating: Level 3 at +260° C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes Parameter Rating Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tjc (2) -40 to +85°C 59° C / W 129° C 1. The thermal resistance is referenced from the hottest part of the junction to the ground tab (pin 4). 2. This corresponds to the typical biasing condition of +5V, 150 mA at an 85°C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 160 °C. MTTF vs. GND Tab Temperature 1000 MTTF (million hrs) Thermal Specifications 100 10 1 60 70 80 90 100 Tab Temperature (°C) 110 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and have a final plated thru diameter of .25 mm (.010”). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. Specifications and information are subject to change without notice. WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com, www.TriQuint.com Page 5 of 5 April 2007