AH1-1 - 9H1LO

AH1-1
High Dynamic Range Amplifier
Product Features
250 – 4000 MHz
+41 dBm OIP3
3 dB Noise Figure
13.5 dB Gain
+21 dBm P1dB
Lead-free/Green/RoHS-compliant
SOT-89 Package
• Single +5 V Supply
• MTTF > 100 years
•
•
•
•
•
•
Applications
•
•
•
•
•
•
Mobile Infrastructure
CATV / DBS
W-LAN / ISM
RFID
Defense / Homeland Security
Fixed Wireless
Product Description
Functional Diagram
The AH1-1 is a high dynamic range amplifier in a low-cost
surface-mount package. The combination of low noise
figure and high output IP3 at the same bias point makes it
ideal for receiver and transmitter applications. The AH1-1
is a specially screened version of the AH1 offering a very
narrow gain spread from device to device.
GND
The device combines dependable performance with superb
quality to maintain MTTF values exceeding 100 years at
mounting temperatures of +85°C. The AH1-1 is available
in both the standard SOT-89 package and the
environmentally-friendly lead-free/green/RoHS-compliant
SOT-89 package.
1
2
3
RF IN
GND
RF OUT
Function
Input
Output/Bias
Ground
Pin No.
1
3
2, 4
The broadband amplifier uses a high reliability GaAs
MMIC technology and is targeted for applications where
high linearity is required. It is well suited for various
current and next generation wireless technologies such as
GPRS, GSM, CDMA, and W-CDMA. In addition, the
AH1-1 will work for other applications within the 250 to 3
4000 MHz frequency range such as fixed wireless.
Specifications (1)
Parameter
4
Typical Performance (4)
Units
Min
MHz
MHz
dB
dB
dB
dBm
dBm
dB
mA
V
250
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (2)
Noise Figure (3)
Operating Current Range
Supply Voltage
12.9
+37
120
Typ
800
13.3
8
15
+21.7
+41
3
150
5
Max
Parameter
4000
Frequency
S21
S11
S22
Output P1dB
Output IP3 (2)
IS-95 Channel Power (5)
Noise Figure
Supply Voltage
Device Current
13.8
180
1. Test conditions unless otherwise noted: T = 25º C, 50 Ω system.
2. 3OIP measured with two tones at an output power of +5 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. Noise figure can be optimized by matching the input for optimal return loss.
Units
MHz
dB
dB
dB
dBm
dBm
dB
dB
V
mA
Typical
900
14.2
-21
-14
+21.7
+42
+15.5
3.2
1900
12.2
-14
-13
+22
+41
+16.5
3.3
5
150
2140
12.0
-21
-11
+22
+40
3.3
4. Parameters reflect performance in an AH1-PCB application circuit, as shown on page 3.
5. Measured with -45 dBc ACPR, IS-95 9 channels fwd.
Absolute Maximum Rating
Parameter
Rating
Operating Case Temperature
Storage Temperature
Supply Voltage
RF Input Power (continuous)
Junction Temperature
-40 to +85 °C
-55 to +150 °C
+6 V
+10 dBm
+220 °C
Ordering Information
Part No.
AH1-1G
AH1-PCB
Description
High Dynamic Range Amplifier
(lead-free/green/RoHS-compliant SOT-89 Pkg)
0.8 – 2.5 GHz Fully Assembled Application Circuit
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com, www.TriQuint.com
Page 1 of 5 April 2007
AH1-1
High Dynamic Range Amplifier
Typical Device Data
S-Parameters (VDS = +5 V, IDS = 150 mA, T = 25°C, unmatched device in a 50 ohm system)
Input return loss can be improved with the appropriate input matching network shown later in this datasheet.
Gain vs. Output Power
Output IP3 vs. Output Power
14
45
13
40
12
35
11
900 MHz
IP3=35
IP3=36
IP3=37
30
100% Idss
75% Idss
10
OIP3 Load Pull Circles
900 MHz
25
50% Idss
9
5
10
15
20
IP3=38
75% Idss
IP3=39
50% Idss
20
0
100% Idss
0
IP3=41
5
Output Power (dBm)
10
15
20
VSWR=1.5
Output Power (dBm)
Gain vs. Frequency
VSWR=2
VSWR=3
Return Loss vs. Frequency
20
0
VSWR=4
VSWR=5
w/o Matching Circuitry
-5
15
-10
-15
10
-20
5
-25
0
S11
-30
0
500
1000
1500
2000
2500
3000
0
500
1000
Frequency (MHz)
-40
1500
S22
2000
2500
3000
Frequency (MHz)
ACPR vs. Channel Power
ACPR vs. Channel Power
IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW, 900 MHz
IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW, 1900 MHz
-40
-50
-50
-60
-60
-70
-70
10
11
12
13
14
15
16
17
Output Channel Power (dBm)
10
11
12
13
14
15
16
17
Output Channel Power (dBm)
S-Parameters (VD = +5 V, ID = 150 mA, T = 25 °C, calibrated to device leads)
Freq (MHz)
50
250
500
750
1000
1250
1500
1750
2000
2250
2500
2750
3000
S11 (dB)
-2.65
-7.97
-8.57
-8.47
-8.24
-7.79
-7.18
-6.55
-6.03
-5.69
-5.55
-5.68
-5.86
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
-29.52
17.80
164.25
-24.29
45.18
-8.25
-44.15
15.28
158.50
-21.31
6.75
-19.01
-60.61
14.91
147.54
-21.11
-3.83
-25.15
-80.72
14.60
134.66
-21.11
-10.90
-29.26
-100.99
14.22
121.38
-21.21
-17.00
-30.76
-120.81
13.80
108.59
-21.21
-23.01
-29.83
-138.15
13.27
96.13
-21.41
-28.54
-29.30
-152.70
12.69
84.26
-21.62
-33.67
-29.12
-164.30
12.11
73.25
-21.83
-38.35
-28.24
-173.54
11.57
62.88
-21.99
-42.48
-26.58
176.22
11.12
52.70
-22.10
-46.41
-25.60
166.67
10.76
42.57
-22.16
-50.57
-26.12
153.06
10.40
31.81
-22.27
-55.21
-29.48
Device S-parameters are available for download off of the website at: http://www.wj.com
S22 (ang)
-39.80
-65.37
-69.25
-84.69
-115.12
-88.78
-94.19
-136.07
-112.00
-97.44
-90.19
-87.80
-82.67
Specifications and information are subject to change without notice.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com, www.TriQuint.com
Page 2 of 5 April 2007
AH1-1
High Dynamic Range Amplifier
Application Circuit: 800 – 2500 MHz (AH1-PCB)
Vcc = +5 V
ID=C5
C=56 pF
Typical RF Performance at 25 °C
Frequency
S21 – Gain
S11 – Input R.L.
S22 – Output R.L.
Output P1dB
Output IP3
All passive components are of size 0603 unless otherwise noted.
MHz 900 1900 2140
dB
14.2 12.2 12.0
dB
-21
-14
-21
dB
-14
-13
-11
dBm +21.7 +22 +22
dBm
(+5 dBm / tone, 10 MHz spacing)
IS-95 Channel Power
+42
+41
Component C1 is shown in the silkscreen but is not used for this
configuration.
Z0=22 Ohm
EL=15.2 Deg
F0=0.9 GHz
ID=C2
C=56 pF
+40
ID=C6
C=56 pF
dBm +15.5 +16.5
(@-45 dBc ACPR, 9 channels fwd)
dB
Noise Figure
Device Bias
ID=C4
L=12 nH
ID=Q1
NET="AH1"
ID=C3
L=5.6 nH
3.2
3.3
3.3
+5V @ 150mA
Circuit Board Material: .062” total thickness with a .014” FR-4 top RF layer, 4 layers (other
layers added for rigidity), 1 oz copper, 50Ω Microstrip line details: width = .025”.
Gain
Return Loss
15
Gain and Output IP3 vs. Temperature
0
Frequency = 800, 801 MHz @ Pout =5dBm
45
14
44
13
43
12
42
Gain (dB)
-10
-15
12
-20
11
-25
10
-30
750
1000
1250
1500
1750
2000
2250
Gain
11
S11
S22
10
750
1000
1250
Frequency (MHz)
1500
1750
2000
2250
40
-40
-15
ACPR vs. Channel Power
ACPR vs. Channel Power
-50
-50
-60
-60
35
60
85
P1dB and Noise Figure vs. Temperature
IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW, 900 MHz
Frequency = 800 MHz
23
P1dB (dBm)
-40
10
Temperature (oC)
Frequency (MHz)
IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW, 1900 MHz
41
OIP3
4
22
3
21
2
20
1
P1dB
Noise Figure (dB)
13
Output IP3 (dBm)
-5
14
-40
15
NF
-70
-70
10
11
12
13
14
15
Output Channel Power (dBm)
16
17
19
10
11
12
13
14
15
16
17
0
-40
-15
10
35
o
60
85
Temperature ( C)
Output Channel Power (dBm)
Specifications and information are subject to change without notice.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com, www.TriQuint.com
Page 3 of 5 April 2007
AH1-1
High Dynamic Range Amplifier
250 - 650 MHz Reference Design
Gain / Return Loss
250
14.8
-10
-19
450 650
14.5 13.8
-36
-11
-17
-13
+22
+42
2.8
2.8
3.2
+5V @ 150mA
16
0
DB(|S(2,1)|) (L)
DB(|S(1,1)|) (R)
DB(|S(2,2)|) (R)
+5V
15
-5
14
-10
13
-15
C=1000 pF
S 11, S22 (s B)
MHz
dB
dB
dB
dBm
dBm
dB
G ain (dB)
Freq.
Gain
S11
S22
P1dB
OIP3
NF
Bias
L=82 nH
NET="AH1"
C=1000 pF
L=15 nH
12
-20
11
-25
0.2
0.3
0.4
0.5
Frequency (GHz)
0.6
0.7
900 MHz Reference Design
+5 V
800
13.7
-13
-13
900 1000
13.7 13.6
-16
-18
-14
-15
+22
+41
2.5
+5V @ 150mA
C=100 pF
Gain / Return Loss
15
0
DB(|S(2,1)|) (L)
DB(|S(1,1)|) (R)
DB(|S(2,2)|) (R)
14
-5
13
-10
12
-15
11
-20
10
L=100 nH
S11, S 22 (dB)
MHz
dB
dB
dB
dBm
dBm
dB
G ain (dB )
Freq.
Gain
S11
S22
P1dB
OIP3
NF
Bias
C=100 pF
NET="AH1"
C=100 pF
L=12 nH
-25
0.7
0.8
0.9
Frequency (GHz)
1
1.1
2350 MHz Reference Design
Gain / Return Loss
13
2.3
12.0
-24
-12
2.35 2.4
12.0 11.9
-40
-25
-13
-14
+22
+41
3.7
+5V @ 150mA
DB(|S(1,1)|) (R)
C=56 pF
DB(|S(2,2)|) (R)
12
-5
11
-10
10
-15
9
-20
TLINP
Z0=50 Ohm
L=250 mil
Eeff=3.4
Loss=0
F0=0 GHz
S 11, S 22 (sB)
GHz
dB
dB
dB
dBm
dBm
dB
G ain (dB)
Freq.
Gain
S11
S22
P1dB
OIP3
NF
Bias
+5V
0
DB(|S(2,1)|) (L)
L=22 nH
NET="AH1"
C=56 pF
C=1.2 pF
8
-25
2.1
2.2
2.3
2.4
Frequency (GHz)
2.5
2.6
3500 MHz Reference Design
Gain / Return Loss
3.3
9.8
-10
-16
3.5
3.8
9.9
9.5
-18
-14
-17
-16
+21.6
+41
4.8
4.3
4.1
+5V @ 150mA
11
0
DB(|S(1,1)|) (R)
DB(|S(2,2)|) (R)
+5V
DB(|S(2,1)|) (L)
C=18 pF
10
-5
9
-10
8
-15
7
-20
6
-25
S11, S22, (dB)
GHz
dB
dB
dB
dBm
dBm
dB
G ain (dB)
Freq.
Gain
S11
S22
P1dB
OIP3
NF
Bias
TLINP
Z0=80 Ohm
L=50 mil
Eeff=3.4
Loss=0
F0=0 GHz
L=12 nH
NET="AH1"
C=18 pF
C=1 pF
3
3.2
3.4
3.6
Frequency (GHz)
3.8
4
Specifications and information are subject to change without notice.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com, www.TriQuint.com
Page 4 of 5 April 2007
AH1-1
High Dynamic Range Amplifier
AH1-1G Mechanical Information
This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260°C reflow temperature) and leaded
(maximum 245°C reflow temperature) soldering processes. The plating material on the leads is NiPdAu.
Outline Drawing
Product Marking
The AH1-1G will be marked with
“AH1G” designator. An alphanumeric
code (“XXXX-X”) is also marked below
part designator on the top surface of
package. A “1” will be lasermarked in
upper right-hand corner.
an
lot
the
the
the
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
MSL / ESD Rating
Land Pattern
ESD Rating:
Value:
Test:
Standard:
Class 1B
Passes ኑ500V to <1000V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
ESD Rating:
Value:
Test:
Standard:
Class IV
Passes ኑ1000V to <2000V
Charged Device Model (CDM)
JEDEC Standard JESD22-C101
MSL Rating: Level 3 at +260° C convection reflow
Standard:
JEDEC Standard J-STD-020
Mounting Config. Notes
Parameter
Rating
Operating Case Temperature
Thermal Resistance, Rth (1)
Junction Temperature, Tjc (2)
-40 to +85°C
59° C / W
129° C
1. The thermal resistance is referenced from the hottest
part of the junction to the ground tab (pin 4).
2. This corresponds to the typical biasing condition of
+5V, 150 mA at an 85°C case temperature. A
minimum MTTF of 1 million hours is achieved for
junction temperatures below 160 °C.
MTTF vs. GND Tab Temperature
1000
MTTF (million hrs)
Thermal Specifications
100
10
1
60
70
80
90
100
Tab Temperature (°C)
110
1. Ground / thermal vias are critical for the proper
performance of this device. Vias should use a .35mm
(#80 / .0135”) diameter drill and have a final plated
thru diameter of .25 mm (.010”).
2. Add as much copper as possible to inner and outer
layers near the part to ensure optimal thermal
performance.
3. Mounting screws can be added near the part to fasten
the board to a heatsink. Ensure that the ground /
thermal via region contacts the heatsink.
4. Do not put solder mask on the backside of the PC board
in the region where the board contacts the heatsink.
5. RF trace width depends upon the PC board material
and construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches). Angles are
in degrees.
Specifications and information are subject to change without notice.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com, www.TriQuint.com
Page 5 of 5 April 2007