Datasheet - Union Semiconductor

UM2301
20V P-Channel Power MOSFET
UM2301S SOT23-3
UM2301P SOT323
General Description
The UM2301 is a low threshold P-channel MOSFET, have extremely low on-resistance. This
benefit provides the designer with an extremely efficient device for use in battery and load
management applications. The device uses a space-saving, small-outline SOT23-3 or SOT323
package.
Applications
Features





Battery Packs
Battery-Powered Portable Equipment
Cellular and Cordless Telephones

Pin Configurations
G
Top View
1
XXX
3
S
Drain-Source Voltage(Max): -20V
Low On-Resistance:
[email protected]=-4.5V
[email protected]=-2.5V
Continuous Drain Current(Max) :
[email protected](SOT23-3)
[email protected](SOT323)
D
2
M: Month Code
XXX: UM2301S 10A
UM2301P VLD
Ordering Information
Part Number
UM2301S
UM2301P
Packaging Type
SOT23-3
SOT323
Marking Code
10A
VLD
Shipping Qty
3000pcs/7 Inch
Tape & Reel
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UM2301
Absolute Maximum Ratings
Symbol
VDSS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
ID
Continuous Drain Current (5s)
SOT23-3
SOT323
Drain Current Pulsed
(Pulse Width ≤ 10μs, Duty Cycle ≤ 1%)
SOT23-3
Power Dissipation
SOT323
Junction Temperature
Storage Temperature
SOT23-3
Thermal Resistance,
Junction-to-Ambient (≤5s)
SOT323
ESD Method 3015.8
IDP
PD
TJ
Tstg
RθJA
ESD
Value
-20
±8
-1.5
-1.1
Units
V
V
-5
A
A
0.86
0.5
-55~150
-55~150
145
250
2000
W
℃
℃
℃/W
V
Electrical Characteristics (TJ=25ºC, Unless otherwise noted)
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
BVDSS
Drain to Source Breakdown Voltage
VGS=0V, ID=-250μA
-20
IDSS
Zero Gate Voltage Drain Current
VDS=-20V, VGS=0V
-0.1
μA
IGSS
Gate-to-Source Leakage Current
VGS=±8V, VDS=0V
±10
μA
Off Characteristics
V
On Characteristics
Static Drain-to-Source
On-Resistance(Note 1)
VGS=-4.5V, ID=-1.0A
200
350
RDS(ON)
VGS=-2.5V, ID=-1.0A
250
400
VGS(TH)
Gate-Source Threshold Voltage
VDS= VGS , ID=-250μA
-0.6
-1
gfs
Forward Transconductance(Note 1)
VDS=-5V, ID=-2.0A
-0.4
4.5
mΩ
V
S
Dynamic Characteristics(Note 2)
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
405
VGS=0V, VDS=-10V,
f=1.0MHz
150
pF
55
Switching Characteristics(Note 2)
td(on)
Turn-on Delay Time
tr
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
VDD=-10V, RL=10Ω,
ID=-1A, VGEN=-4.5V,
RG=1Ω
11
20
35
60
80
150
50
90
-0.8
-1.2
ns
Drain-Source Diode Characteristics and Maximum Ratings
VSD
Forward Diode Voltage
IS=-0.7A
V
Note 1: Pulse test: pulse width ≤ 300μs, duty cycle ≤ 2%.
Note 2: Guaranteed by design, not subject to production testing.
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UM2301
Typical Characteristics (TJ=25ºC, Unless otherwise noted)
Transfer Characteristics
Output Characteristics
3000
Vgs=-1.2V
Vgs=-1.5V
4000
Vgs=-2.0V
3500
Vgs=-3.0V
Vgs=-4.0V
3000
Vgs=-5.0V
2500
2000
1500
1000
2500
-ID,Drain Current (mA)
4500
2000
1500
1000
TA=-40℃
500
TA=25℃
500
TA=125℃
0
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
-VDS,Drain-to-source Voltage (V)
1
2
-VGS,Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On Resistance vs. Drain Current
0
3
RDS(on) -On Resistance (m Ω )
430
1100
1000
ID - Drain Current (mA)
-ID,Drain Current (mA)
5000
25C
900
800
700
600
500
400
300
200
100
0
410
Vgs=-2.5V
390
Vgs=-4.5V
370
350
330
310
290
270
250
230
210
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
VDS - Drain-Source Voltage (V)
0
1
2
3
4
5
ID - Drain Current (A)
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UM2301
Typical Characteristics (TJ=25ºC, Unless otherwise noted)
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Ambient Temperature
400
RDS(on) - On-Resistance (m Ω )
RDS(on) - On-Resistance (m Ω )
600
TA=-40℃
500
TA=25℃
TA=125℃
400
300
200
100
IDS=-1.0A
Vgs=-2.5V
Vgs=-4.5V
360
320
280
240
200
IDS=-1.0A
160
0
0
1
2
3
4
5
6
-VGS,Gate-to-Source Voltage (V)
-50
-25
0
25
50
75
100
TA-Ambient Temperature (℃)
Threshold Voltage vs. Ambient
Temperature
0.2
IDS=-250uA
VGS(th) Variance (V)
IDS=-1mA
0.1
0
-0.1
-0.2
-0.3
-50
-25
0
25
50
75
100 125 150
TA - Ambient Temperature - (℃)
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UM2301
Package Information
UM2301S SOT23-3
Outline Drawing
D
θ
b
Symbol
0.2
E
E1
3
2
L1
L
1
e
e1
c
Top View
A
A1
A2
End View
Side View
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
DIMENSIONS
MILLIMETERS
Min
Max
1.050
1.250
0.000
0.100
1.050
1.150
0.300
0.500
0.100
0.200
2.820
3.020
1.500
1.700
2.650
2.950
0.950REF
1.800
2.000
0.550REF
0.300
0.600
0°
8°
INCHES
Min
Max
0.041 0.049
0.000 0.004
0.041 0.045
0.012 0.020
0.004 0.008
0.111 0.119
0.059 0.067
0.104 0.116
0.037REF
0.071 0.079
0.022REF
0.012 0.024
0°
8°
2.02
0.80
Land Pattern
NOTES:
1. Compound dimension: 2.92×1.60;
2. Unit: mm;
3. General tolerance ±0.05mm unless otherwise
specified;
4. The layout is just for reference.
1.90
10A
M
Tape and Reel Orientation
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UM2301
UM2301P SOT323
Outline Drawing
D
Symbol
E
HE
L1
L
b
PIN 1
Q1
e
c
e
Top View
Side View
A1
A
A2
End View
D
E
HE
b
e
Q1
A
A1
A2
c
L
L1
DIMENSIONS
MILLIMETERS
INCHES
Min
Max
Min
Max
1.80
2.20
0.072
0.088
1.15
1.35
0.006
0.054
1.80
2.40
0.072
0.050
0.25
0.40
0.010
0.016
0.65BSC
0.026BSC
0.10
0.40
0.004
0.016
0.80
1.10
0.032
0.044
0.00
0.10
0.00
0.004
0.80
1.00
0.032
0.040
0.10
0.18
0.004
0.007
0.10
0.30
0.004
0.012
0.425TYP
0.017TYP
Land Pattern
0.65
1.80
0.65
0.6
0.5
NOTES:
1. Compound dimension: 2.00×1.25;
2. Unit: mm;
3.General tolerance ±0.05mm unless otherwise
specified;
4. The layout is just for reference.
Tape and Reel Orientation
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UM2301
IMPORTANT NOTICE
The information in this document has been carefully reviewed and is believed to be
accurate. Nonetheless, this document is subject to change without notice. Union assumes
no responsibility for any inaccuracies that may be contained in this document, and makes
no commitment to update or to keep current the contained information, or to notify a
person or organization of any update. Union reserves the right to make changes, at any
time, in order to improve reliability, function or design and to attempt to supply the best
product possible.
Union Semiconductor, Inc
Add: Unit 606, No.570 Shengxia Road, Shanghai 201210
Tel: 021-51093966
Fax: 021-51026018
Website: www.union-ic.com
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