HIGH VOLTAGE N-Channel MOSFET WFW20N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances □ Excellent Switching Characteristics TO‐3P □ Extended Safe Operating Area G‐Gate,D‐Drain,S‐Sourse □ Unrivalled Gate Charge :98 nC (Typ.) □ BVDSS=600V,ID=20A □ Lower RDS(on) : 0.45Ω (Max) @VG=10V □ 100% Avalanche Tested Absolute Maximum Ratings Symbol VDSS ID Tc=25℃ unless other wise noted Parameter Drain Current 600 V 20 A 12.7 A ±30 V 690 mJ 20 A 208 W -55 ~ +150 ℃ 300 ℃ -continuous (Tc=25℃) -continuous (Tc=100℃) Gate-Sourse Voltage EAS Single Plused Avanche Energy IAR Avalanche Current PD Power Dissipation (Tc=25℃) TL Units Drain-Sourse Voltage VGS TJ,TSTG WFW20N60 (Note1) (Note2) Operating and Storage Temperature Range Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds Thermal Characteristics Symbol Parameter Max Units RθJC Thermal Resistance,Junction to Case -- 0.48 ℃/W RθJA Thermal Resistance,Junction to Ambient -- 41.7 ℃/W www.wisdom-technologies.com Typ. Rev.A0,August , 2010 | 1 HIGH VOLTAGE N-Channel MOSFET Electrical Characteristics Tc=25℃ unless other wise noted Symbol Parameter Test Condition Min. Typ. Max Units 600 -- -- V Off Characteristics BVDSS Drain-Sourse Breakdown Voltage ID=250μA，VGS=0 △BVDSS/ △TJ Breakdown Voltage Temperature Conficient ID=250 μ A,Reference to 25℃ -- 0.6 -- V/℃ IDSS Zero Gate Voltage Drain Current Vds=600V, Vgs=0V -- -- 1 μA 10 μA Vds=480V, Tc=125℃ IGSSF Gate-body leakage Current, Forward Vgs=+30V, Vds=0V IGSSR Gate-body leakage Current, Reverse Vgs=-30V, Vds=0V -- -- 100 nA -- -- -100 nA On Characteristics VGS(th) Date Threshold Voltage Id=250uA,Vds=Vgs 2 -- 4 V RDS(on) Static Drain-Sourse On-Resistance Id=10A,Vgs=10V -- -- 0.3 Ω -- 1730 2250 pF -- 960 1150 pF -- 85 -- pF -- 46 90 nS -- 140 280 nS -- 175 350 nS -- 100 200 nS -- 57 72 nC -- 11.5 14 nC 28 -- nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=25V，VGS=0， f=1.0MHz Switching Characteristics Td(on) Turn-On Delay Time Tr Turn-On Rise Time Td(off) Turn-Off Delay Time Tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Sourse Charge Qgd Gate-Drain Charge VDD=300V，ID=20A， RG=25Ω (Note 3,4) VDS=480,VGS=10V， ID=20A (Note 3,4) Drain-Sourse Diode Characteristics and Maximum Ratings IS Maximun Continuous Drain-Sourse Diode Forward Current -- -- 20 A ISM Maximun Plused Drain-Sourse DiodeForwad Current -- -- 60 A VSD Drain-Sourse Voltage Id=20A -- -- 1.4 V trr Reverse Recovery Time -- 450 -- nS Qrr Reverse Recovery Charge IS=20A,VGS =0V diF/dt=100A/μs (Note3) -- 8.2 -- μC *Notes Diode Forward 1, L=3.2mH, IAS=20.0A, VDD=50V, RG=25Ω, Starting TJ =25°C 2, Repetitive Rating : Pulse width limited by maximum junction temperature 3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 4, Essentially Independent of Operating Temperature www.wisdom-technologies.com Rev.A0,August , 2010 | 2 HIGH VOLTAGE N-Channel MOSFET Typical Characteristics www.wisdom-technologies.com Rev.A0,August , 2010 | 3 HIGH VOLTAGE N-Channel MOSFET Typical Characteristics (Continued) www.wisdom-technologies.com Rev.A0,August , 2010 | 4 HIGH VOLTAGE N-Channel MOSFET www.wisdom-technologies.com Rev.A0,August , 2010 | 5 HIGH VOLTAGE N-Channel MOSFET www.wisdom-technologies.com Rev.A0,August , 2010 | 6 HIGH VOLTAGE N-Channel MOSFET Package Dimension www.wisdom-technologies.com Rev.A0,August , 2010 | 7