HIGH VOLTAGE N-Channel MOSFET D WFN1 N60 ! ● 600V N-Channel MOSFET ◀ G! ▲ ● ● Features ! S □ Low Intrinsic Capacitances □ Excellent Switching Characteristics TO-92 □ Extended Safe Operating Area G‐Gate,D‐Drain,S‐Sourse □ Unrivalled Gate Charge :Qg= 10nC (Typ.) □ BVDSS=600V,ID=1A □ RDS(on) : 8 Ω (Max) @VG=10V □ 100% Avalanche Tested Absolute Maximum Ratings Symbol VDSS ID Tc=25℃ unless other wise noted Drain-Sourse Voltage Drain Current Units WFN1 N60 Parameter -continuous (Tc=25℃) 600 V 1* A 0.63* -continuous (Tc=100℃) A VGS Gate-Sourse Voltage EAS Single Plused Avanche Energy (Note1) 25 mJ IAR Avalanche Current (Note2) 1 A PD Power Dissipation (Tc=25℃) 23 W -55 ~ +150 ℃ 300 ℃ TJ,TSTG TL V ±30 Operating and Storage Temperature Range Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds Thermal Characteristics Symbol Parameter Typ. Max RθJC Thermal Resistance,Junction to Case -RθJA Units ℃/W Thermal Resistance,Junction to Ambient -- 40 ℃/W * Drain current limited by maximum junction temperature. www.wisdom-technologies.com Rev.A0,August , 2010 | 1 HIGH VOLTAGE N-Channel MOSFET Electrical Characteristics Tc=25℃ unless other wise noted Symbol Parameter Test Condition Min. Typ. Max Units Off Characteristics BVDSS Drain-Sourse Breakdown Voltage ID=250μA，VGS=0 600 △BVDSS/ △TJ Breakdown Voltage Temperature Conficient ID=250μA,Reference to 25℃ -- IDSS Zero Gate Voltage Drain Current Vds=600V, Vgs=0V -- IGSSF Gate-body leakage Current, Forward IGSSR Gate-body leakage Current, Reverse -3 -- Vds=480V, Tc=125℃ -- V V/℃ -1 μA 10 μA Vgs=+30V, Vds=0V -- -- 100 nA Vgs=-30V, Vds=0V -- -- -100 nA On Characteristics VGS(th) Date Threshold Voltage Id=250uA,Vds=Vgs 2 -- 4 V RDS(on) Static Drain-Sourse On-Resistance Id=0.5A,Vgs=10V -- -- 8 Ω -- 156 -- 23.6 pF -- 3.8 pF -- 6.5 -- 5 -- nS -- 19 -- nS -- 25 -- nS --- 7 1.1 10 -- nC nC 3.4 -- nC Dynamic Characteristics Ciss Input Capacitance Coss Output Crss Reverse Transfer Capacitance Capacitance VDS=25V，VGS=0， f=1.0MHz pF Switching Characteristics Td(on) Tr Td(off) Turn-On Delay Time Rise Time VDD=300V，ID=1A RG=25Ω (Note 3,4) Turn-Off Delay Time Tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Sourse Charge Qgd Gate-Drain Charge VDS=480,VGS=10V， ID=1A (Note 3,4) -- nS Drain-Sourse Diode Characteristics and Maximum Ratings IS Maximun Continuous Drain-Sourse Diode Forward Current -- -- 1 A ISM Maximun Plused Drain-Sourse DiodeForwad Current -- -- 4 A VSD Drain-Sourse Diode Forward Voltage Id=1A -- -- 1.5 V IS=1A,VGS =0V diF/dt=100A/μs (Note3) -- 229 -- nS 337 -- μC trr Qrr *Notes Reverse Recovery Time Reverse Recovery Charge -- 1, L=55mH, IAS=1.0A, VDD=50V, RG=25Ω, Starting TJ =25°C 2, Repetitive Rating : Pulse width limited by maximum junction temperature 3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 4, Essentially Independent of Operating Temperature www.wisdom-technologies.com Rev.A0,August , 2010 | 2 HIGH VOLTAGE N-Channel MOSFET Typical Characteristics Output Characteristics Transconductance Transfer Characteristics Static Drain-source On Resistance www.wisdom-technologies.com Rev.A0,August , 2010 | 3 HIGH VOLTAGE N-Channel MOSFET Typical Characteristics (Continued) Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temp. Capacitance Variations Normalized On Resistance vs Temperature www.wisdom-technologies.com Rev.A0,August , 2010 | 4 HIGH VOLTAGE N-Channel MOSFET Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times www.wisdom-technologies.com Rev.A0,August , 2010 | 5